© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 14
1Publication Order Number:
BZX84C2V4LT1/D
BZX84BxxxLT1,
BZX84CxxxLT1 Series,
SZBZX84BxxxLT1G,
SZBZX84CxxxLT1G Series
Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Features
•225 mW Rating on FR−4 or FR−5 Board
•Zener Breakdown Voltage Range − 2.4 V to 75 V
•Package Designed for Optimal Automated Board Assembly
•Small Package Size for High Density Applications
•ESD Rating of Class 3 (>16 kV) per Human Body Model
•Tight Tolerance Series Available (See Page 4)
•AEC−Q101 Qualified and PPAP Capable
•SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
•Pb−Free Packages are Available
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
MAXIMUM RATINGS
Rating Symbol Max Unit
Total Power Dissipation on FR−5 Board,
(Note 1) @ TA = 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
PD
RqJA
225
1.8
556
mW
mW/°C
°C/W
Total Power Dissipation on Alumina
Substrate, (Note 2) @ TA = 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
PD
RqJA
300
2.4
417
mW
mW/°C
°C/W
Junction and Storage Temperature Range TJ, Tstg −65 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 X 0.75 X 0.62 in.
2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.
Device Package Shipping†
ORDERING INFORMATION
BZX84CxxxLT1 SOT−23 3000/Tape & Reel
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
DEVICE MARKING INFORMATION
BZX84CxxxLT3 SOT−23 10,000/Tape &
Reel
BZX84BxxxLT1 SOT−23 3000/Tape & Reel
BZX84BxxxLT3 SOT−23 10,000 / Tape &
Reel
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
BZX84CxxxLT1G SOT−23
(Pb−Free)
3000/Tape & Reel
BZX84BxxxLT1G SOT−23
(Pb−Free)
3000 / Tape &
Reel
BZX84CxxxLT3G 10,000/Tape &
Reel
BZX84BxxxLT3G 10,000/Tape &
Reel
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
CASE 318
STYLE 8
3
Cathode
1
Anode
MARKING DIAGRAM
3
1
21
xxx M G
G
xxx = Device Code
M = Date Code*
G= Pb−Free Package
*Date Code orientation may vary depending
upon manufacturing location.
(Note: Microdot may be in either location)
SZBZX84BxxxLT1G SOT−23
(Pb−Free)
3000 / Tape &
Reel
SZBZXCxxxLT3G 10,000/Tape &
Reel
SOT−23
(Pb−Free)
SZBZX84xxxLT1G SOT−23
(Pb−Free)
3000/Tape & Reel
BZX84BxxxLT1, BZX84CxxxLT1 Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C
unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
Symbol Parameter
VZReverse Zener Voltage @ IZT
IZT Reverse Current
ZZT Maximum Zener Impedance @ IZT
IRReverse Leakage Current @ VR
VRReverse Voltage
IFForward Current
VFForward Voltage @ IF
QVZMaximum Temperature Coefficient of VZ
CMax. Capacitance @ VR = 0 and f = 1 MHz
Zener Voltage Regulator
IF
V
I
IR
IZT
VR
VZ
VF
BZX84BxxxLT1, BZX84CxxxLT1 Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
(Devices listed in bold, italic are ON Semiconductor Preferred devices.)
Device*
Device
Marking
VZ1 (Volts)
@I
ZT1 =5mA
(Note 3) ZZT1
(W)
@ IZT1 =
5 mA
VZ2 (V)
@I
ZT2 =1mA
(Note 3) ZZT2
(W)
@ IZT2 =
1 mA
VZ3 (V)
@I
ZT3 =20mA
(Note 3) ZZT3
(W)
@ IZT3 =
20 mA
Max Reverse
Leakage
Current
qVZ
(mV/k)
@ IZT1 = 5 mA
C (pF)
@ VR = 0
f = 1 MHz
Min Nom Max Min Max Min Max
VR
Volts
IR
mA@Min Max
SZ/BZX84C2V4LT1, G Z11 2.2 2.4 2.6 100 1.7 2.1 600 2.6 3.2 50 50 1 −3.5 0 450
SZ/BZX84C2V7LT1, G Z12 2.5 2.7 2.9 100 1.9 2.4 600 3 3.6 50 20 1 −3.5 0 450
SZ/BZX84C3V0LT1, G Z13 2.8 3 3.2 95 2.1 2.7 600 3.3 3.9 50 10 1 −3.5 0 450
SZ/BZX84C3V3LT1, G Z14 3.1 3.3 3.5 95 2.3 2.9 600 3.6 4.2 40 5 1 −3.5 0 450
SZ/BZX84C3V6LT1, G Z15 3.4 3.6 3.8 90 2.7 3.3 600 3.9 4.5 40 5 1 −3.5 0 450
SZ/BZX84C3V9LT1, G Z16 3.7 3.9 4.1 90 2.9 3.5 600 4.1 4.7 30 3 1 −3.5 −2.5 450
SZ/BZX84C4V3LT1, G W9 4 4.3 4.6 90 3.3 4 600 4.4 5.1 30 3 1 −3.5 0 450
SZ/BZX84C4V7LT1/T3, G Z1 4.4 4.7 5 80 3.7 4.7 500 4.5 5.4 15 3 2 −3.5 0.2 260
SZ/BZX84C5V1LT1/T3, G Z2 4.8 5.1 5.4 60 4.2 5.3 480 5 5.9 15 2 2 −2.7 1.2 225
SZ/BZX84C5V6LT1/T3, G Z3 5.2 5.6 6 40 4.8 6 400 5.2 6.3 10 1 2 −2.0 2.5 200
SZ/BZX84C6V2LT1/T3, G Z4 5.8 6.2 6.6 10 5.6 6.6 150 5.8 6.8 6 3 4 0.4 3.7 185
SZ/BZX84C6V8LT1/T3, G Z5 6.4 6.8 7.2 15 6.3 7.2 80 6.4 7.4 6 2 4 1.2 4.5 155
SZ/BZX84C7V5LT1, G Z6 7 7.5 7.9 15 6.9 7.9 80 7 8 6 1 5 2.5 5.3 140
SZ/BZX84C8V2LT1, G Z7 7.7 8.2 8.7 15 7.6 8.7 80 7.7 8.8 6 0.7 5 3.2 6.2 135
SZ/BZX84C9V1LT1/T3, G Z8 8.5 9.1 9.6 15 8.4 9.6 100 8.5 9.7 8 0.5 6 3.8 7.0 130
SZ/BZX84C10LT1, G Z9 9.4 10 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7 4.5 8.0 130
SZ/BZX84C11LT1, G Y1 10.4 11 11.6 20 10.2 11.6 150 10.4 11.8 10 0.1 8 5.4 9.0 130
SZ/BZX84C12LT1, G Y2 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8 6.0 10.0 130
SZ/BZX84C13LT1, G Y3 12.4 13 14.1 30 12.3 14 170 12.5 14.2 15 0.1 8 7.0 11.0 120
SZ/BZX84C15LT1/T3, G Y4 13.8 15 15.6 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13.0 110
SZ/BZX84C16LT1, G Y5 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14.0 105
SZ/BZX84C18LT1/T3, G Y6 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16.0 100
SZ/BZX84C20LT1, G Y7 18.8 20 21.2 55 18.7 21.1 225 18.9 21.4 20 0.05 14 14.4 18.0 85
SZ/BZX84C22LT1, G Y8 20.8 22 23.3 55 20.7 23.2 250 20.9 23.4 25 0.05 15.4 16.4 20.0 85
SZ/BZX84C24LT1, G Y9 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22.0 80
Device
Device
Marking
VZ1 Below
@I
ZT1 =2mA ZZT1
Below
@ IZT1 =
2 mA
VZ2 Below
@I
ZT2 = 0.1 m-
AZZT2
Below
@ IZT4 =
0.5 mA
VZ3 Below
@I
ZT3 =10mA ZZT3
Below
@ IZT3 =
10 mA
Max Reverse
Leakage
Current
qVZ
(mV/k) Below
@ IZT1 = 2 mA
C (pF)
@ VR = 0
f = 1 MHz
Min Nom Max Min Max Min Max
VR
(V)
IR
mA@Min Max
SZ/BZX84C27LT1, G Y10 25.1 27 28.9 80 25 28.9 300 25.2 29.3 45 0.05 18.9 21.4 25.3 70
SZ/BZX84C30LT1, G Y11 28 30 32 80 27.8 32 300 28.1 32.4 50 0.05 21 24.4 29.4 70
SZ/BZX84C33LT1/T3, G Y12 31 33 35 80 30.8 35 325 31.1 35.4 55 0.05 23.1 27.4 33.4 70
SZ/BZX84C36LT1, G Y13 34 36 38 90 33.8 38 350 34.1 38.4 60 0.05 25.2 30.4 37.4 70
SZ/BZX84C39LT1, G Y14 37 39 41 130 36.7 41 350 37.1 41.5 70 0.05 27.3 33.4 41.2 45
SZ/BZX84C43LT1, G Y15 40 43 46 150 39.7 46 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40
SZ/BZX84C47LT1, G Y16 44 47 50 170 43.7 50 375 44.1 50.5 90 0.05 32.9 42.0 51.8 40
SZ/BZX84C51LT1, G Y17 48 51 54 180 47.6 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40
SZ/BZX84C56LT1, G Y18 52 56 60 200 51.5 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40
SZ/BZX84C62LT1, G Y19 58 62 66 215 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35
SZ/BZX84C68LT1, G Y20 64 68 72 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35
SZ/BZX84C75LT1, G Y21 70 75 79 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35
3. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.
* The “G” suffix indicates Pb−Free package available.
BZX84BxxxLT1, BZX84CxxxLT1 Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
Device
Device
Marking
VZ (Volts) @ IZT = 5 mA
(Note 4)
ZZT (W) @
IZT = 5 mA
(Note 4)
Max Reverse
Leakage
Current
qVZ
(mV/k)
@ IZT = 5 mA C (pF)
@ VR =0,
f = 1 MHz
IR
@
VR
Min Nom Max Max mAVolts Min Max
BZX84B4V7LT1, G T10 4.61 4.7 4.79 80 3 2 −3.5 0.2 260
SZ/BZX84B5V1LT1, G T11 5.00 5.1 5.20 60 2 2 −2.7 1.2 225
SZ/BZX84B5V6LT1, G T12 5.49 5.6 5.71 40 1 2 −2 2.5 200
SZ/BZX84B6V2LT1, G T13 6.08 6.2 6.32 10 3 4 0.4 3.7 185
SZ/BZX84B6V8LT1, G T14 6.66 6.8 6.94 15 2 4 1.2 4.5 155
SZ/BZX84B7V5LT1, G T15 7.35 7.5 7.65 15 1 5 2.5 5.3 140
BZX84B8V2LT1, G T16 8.04 8.2 8.36 15 0.7 5 3.2 6.2 135
BZX84B9V1LT1, G T17 8.92 9.1 9.28 15 0.5 6 3.8 7 130
SZ/BZX84B12LT1, G T18 11.8 12 12.2 25 0.1 8 6 10 130
BZX84B15LT1, G T22 14.7 15 15.3 30 0.05 10.5 9.2 13 110
SZ/BZX84B16LT1, G T19 15.7 16 16.3 40 0.05 11.2 10.4 14 105
BZX84B18LT1, G T20 17.6 18 18.4 45 0.05 12.6 12.4 16 100
BZX84B22LT1, G T24 21.6 22 22.4 55 0.05 15.4 16.4 20 85
BZX84B24LT1, G T25 23.5 24 24.5 70 0.05 16.8 18.4 22 80
4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.
*The “G” suffix indicates Pb−Free package available.
BZX84BxxxLT1, BZX84CxxxLT1 Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series
http://onsemi.com
5
TYPICAL CHARACTERISTICS
VZ, TEMPERATURE COEFFICIENT (mV/ C)°θ
VZ, NOMINAL ZENER VOLTAGE (V)
-3
-2
-1
0
1
2
3
4
5
6
7
8
12111098765432
Figure 1. Temperature Coefficients
(Temperature Range −55°C to +150°C)
TYPICAL TC VALUES
VZ @ IZT
VZ, TEMPERATURE COEFFICIENT (mV/ C)°θ
100
10
110 100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 2. Temperature Coefficients
(Temperature Range −55°C to +150°C)
VZ @ IZT
100
VZ, NOMINAL ZENER VOLTAGE
Figure 3. Effect of Zener Voltage on
Zener Impedance
101
ZZT, DYNAMIC IMPEDANCE ( )Ω
1000
100
10
1
TJ = 25°C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
IZ = 1 mA
5 mA
20 mA
VF, FORWARD VOLTAGE (V)
Figure 4. Typical Forward Voltage
1.21.11.00.90.80.70.60.50.4
IF, FORWARD CURRENT (mA)
1000
100
10
1
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
150°C75°C 25°C 0°C
TYPICAL TC VALUES
BZX84BxxxLT1, BZX84CxxxLT1 Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series
http://onsemi.com
6
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 5. Typical Capacitance
1000
100
10
1101
BIAS AT
50% OF VZ NOM
TA = 25°C
0 V BIAS
1 V BIAS
12
VZ, ZENER VOLTAGE (V)
100
10
1
0.1
0.01 1086420
TA = 25°C
IZ, ZENER CURRENT (mA)
VZ, ZENER VOLTAGE (V)
100
10
1
0.1
0.0110 30 50 70 90
TA = 25°C
IR, LEAKAGE CURRENT ( A)μ
90
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 6. Typical Leakage Current
1000
100
10
1
0.1
0.01
0.001
0.0001
0.00001 80706050403020100
+150°C
+25°C
-55°C
IZ, ZENER CURRENT (mA)
Figure 7. Zener Voltage versus Zener Current
(VZ Up to 12 V)
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
BZX84BxxxLT1, BZX84CxxxLT1 Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G Series
http://onsemi.com
7
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q°°°°
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
BZX84C2V4LT1/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
