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c 2012 ROHM Co., Ltd. All rights reserved. 2012.01 - Rev.E
2SD1733
(1) Base
(2) Collector
(3) Emitter
ROHM : MPT3
EIAJ : SC-62
2SD1898
Abbreviated symbol : DF
−0.1
+0.2
−0.05
+0.1
±0.1
+0.2
−0.1
(3)(2)(1)
4.0±0.3
1.0±0.2 0.5±0.1
2.5
3.0±0.2
1.5±0.1
1.5±0.1
0.4±0.1 0.5±0.1 0.4±0.1
0.4
1.5
4.5
1.6±0.1
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
−
0.1
+
0.2
+
0.3
−
0.1
2.3
±
0.22.3
±
0.2
0.65
±
0.1
0.9
0.75
5.5 1.5
±
0.3
6.5
±
0.2
5.1 C0.5
(3)
(2)
(1)
0.9
−
0.1
+
0.2
1.0
±
0.2
0.55
±
0.1
9.5
±
0.5
2.5
1.5
2.3
0.5
±
0.1
Power Transistor (80V, 1A)
2SD1898 / 2SD1733
Features Dimensions (Unit : mm)
1) High VCEO, VCEO=80V
2) High IC, IC=1A (DC)
3) Good hFE linearity
4) Low VCE (sat)
5) Complements the 2SB1260 / 2SB1181
Structure
Epitaxial planer type
NPN silicon transistor
Absolute maximum ratings (Ta=25C)
Parameter Symbol Limits Unit
Collector-base voltage VCBO 120 V
Collector-emitter voltage VCEO 80 V
Emitter-base voltage VEBO 5V
Collector current IC
1 A (DC)
2 A (Pulse)∗1
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
Collector power
dissipation PC
0.5
2
1
∗2
10
W
W
W
W (Tc=25°C)
∗1 Pw=20ms, duty=1 / 2
∗2 When mounted on a 40×40×0.7mm ceramic board.
2SD1898
2SD1733
2/3
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c 2012 ROHM Co., Ltd. All rights reserved. 2012.01 - Rev.E
Data Sheet
2SD1898 / 2SD1733
Absolute maximum ratings (Ta=25C)
Parameter Symbol Limits Unit
Collector-base voltage VCBO 120 V
Collector-emitter voltage VCEO 80 V
Emitter-base voltage VEBO 5V
Collector current IC
1 A (DC)
2 A (Pulse)∗1
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
Collector power
dissipation PC
0.5
2
1
∗2
10
W
W
W
W (Tc=25°C)
∗1 Pw=20ms, duty=1 / 2
∗2 When mounted on a 40×40×0.7mm ceramic board.
2SD1898
2SD1733
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
120
80
5
−
−
−
−
−
−
−
−
−
−
0.15
100
20
−
−
−
1
0.5
0.4
−
−
VI
C=50μA
IC=1mA
IE=50μA
VCB=100V
VEB=4V
IC/IB=500mA/50mA
VCE=10V, IE=−50mA, f=100MHz
VCE=3V, IC=0.5A
∗
VCB=10V, IE=0A, f=1MHz
V
V
μA
μA
V
120 −390 −
MHz
pF
Typ. Max. Unit Conditions
∗ Measured using pulse current
Packaging specifications and hFE
Package Taping
Code
2SD1898
Type
T100
1000hFE
TL
2500
−
−
2SD1733
QR
QR
Basic ordering unit (pieces)
hFE values are classified as follows :
Item
h
FE
R
180 to 390
Q
120 to 270
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c 2012 ROHM Co., Ltd. All rights reserved. 2012.01 - Rev.E
Data Sheet
2SD1898 / 2SD1733
Electrical characteristic curves
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
COLLECTOR CURRENT : I
C
(mA)
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter propagation
characteristics
1000
100
10
1
Ta=25°C
V
CE
=5V
2408106
COLLECTOR CURRENT : I
C
(
A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(
V)
Fig.2 Grounded emitter output
characteristics
1.0
0
0.8
0.6
0.4
0.2
6mA
5mA
4mA
3mA
2mA
1mA
I
B
=0mA
Ta=25°C
0
100
1000
1000 10 1000
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.3 DC current gain vs.
collector current
Ta=25°C
V
CE
=3V
1V
0.01
0.1
1.0
2.0
0.2
0.02
0.05
0.5
1000 10 1000
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V)
COLLECTOR CURRENT : I
C
(
mA)
Fig.4 Collector-emitter saturation
voltage vs. collector current
I
C
/I
B
=20/1
Ta=25°C
10/1
1 2 5 10 20 50 100 200 500 100
0
TRANSITION FREQUENCY : f
T
(MHz)
EMITTER CURRENT : −I
E
(mA)
Fig.5 Gain bandwidth product vs.
emitter current
500
200
100
50
20
10
5
2
Ta=25°C
V
CE
=5V
0.1 0.2 0.5 1 2 5 10 20 50 100
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR TO BASE VOLTAGE : V
CB
(
V)
EMITTER TO BASE VOLTAGE : V
EB
(
V)
Fig.6 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
100
1000
10
1
Ta=25°C
f=1MHz
I
E
=0A
Ic=0A
Ic Max (Pulse)
Ta=25°C
Single
non-repetitive
pulse
Pw=10mS
Pw=100mS
DC
COLLECTOR TO EMITTER VOLTAGE : VCE (
V)
COLLECTOR CURRENT : IC (
A)
0.1 0.2 0.5 1 2 5 10 20 50100 500200 100
0
10
5
2
1
20m
10m
5m
2m
1m
50m
100m
200m
500m
Fig.7 Safe operating area
(2SD1898)
R1120A
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