March 2006 / D Page 1
SEMICONDUCTOR
TAK CHEONG
®
500 mW DO-35 Hermetically
Sealed Glass Zener Voltage
Regulators
Absolute Ma ximum Ra ti ng s TA = 25°C unless otherwise noted
Parameter Value Units
Power Dissipation 500 mW
Storage Temperature Range -65 to +200 °C
Operating Junction Temperature +200 °C
Lead Temperature (1/16” from case for 10 seconds) +230 °C
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
Zener Voltage Range 2.0 to 56 Volts
DO-35 Package (JEDEC)
Through-Hole Device Type Mounting
Hermetically Sealed Glass
Compression Bonded Construction
All external surfaces are corrosion resistant and leads are readily solderable
Cathode indicated by polarity band
Electrical Characteristics TA = 25°C unless otherwise noted
VZ @ IZT
(Volts)
Device Type Min Max
IZT
(mA)
ZZT @ IZT
(Ω)
Max
IZK
(mA)
ZZK @ IZK
(Ω)
Max
IR @ VR
(µA)
Max
VR
(Volts)
TCBZX79C 2V0 1.88 2.12 5 100 1 600 150 1
TCBZX79C 2V2 2.08 2.33 5 100 1 600 150 1
TCBZX79C 2V4 2.28 2.56 5 100 1 600 100 1
TCBZX79C 2V7 2.51 2.89 5 100 1 600 75 1
TCBZX79C 3V0 2.8 3.2 5 95 1 600 50 1
TCBZX79C 3V3 3.1 3.5 5 95 1 600 25 1
TCBZX79C 3V6 3.4 3.8 5 90 1 600 15 1
TCBZX79C 3V9 3.7 4.1 5 90 1 600 10 1
TCBZX79C 4V3 4 4.6 5 90 1 600 5 1
TCBZX79C 4V7 4.4 5 5 80 1 500 3 2
TCBZX79C 5V1 4.8 5.4 5 60 1 480 2 2
TCBZX79C 5V6 5.2 6 5 40 1 400 1 2
TCBZX79C 6V2 5.8 6.6 5 10 1 150 3 4
TCBZX79C 6V8 6.4 7.2 5 15 1 80 2 4
TCBZX79C 7V5 7 7.9 5 15 1 80 1 5
TCBZX79C 8V2 7.7 8.7 5 15 1 80 0.7 5
TCBZX79C 9V1 8.5 9.6 5 15 1 100 0.5 6
TCBZX79C 10 9.4 10.6 5 20 1 150 0.2 7
TCBZX79C 11 10.4 11.6 5 20 1 150 0.1 8
TCBZX79C 12 11.4 12.7 5 25 1 150 0.1 8
TCBZX79C 13 12.4 14.1 5 30 1 170 0.1 8
TCBZX79C 15 13.8 15.6 5 30 1 200 0.05 10.5
TCBZX79C 16 15.3 17.1 5 40 1 200 0.05 11.2
TCBZX79C 18 16.8 19.1 5 45 1 225 0.05 12.6
TCBZX79C 20 18.8 21.2 5 55 1 225 0.05 14
Cathode Anode
ELECTRICAL SYMBOL
TCBZX79C 2V0 through TCBZX79C75 Series
AXIAL LEAD
DO35
DEVICE MARKING DIAGRAM
L
79T
xxx
L : Logo
Device Code : TCBZX79Txxx
T : VZ tolerance
B=±2% C=±5%
March 2006 / D Page 2
SEMICONDUCTOR
TAK CHEONG
®
Electrical Characteristics TA = 25°C unless otherwise noted
VZ @ IZT
(Volts)
Device Type Min Max
IZT
(mA)
ZZT @ IZT
(Ω)
Max
IZK
(mA)
ZZK @ IZK
(Ω)
Max
IR @ VR
(µA)
Max
VR
(Volts)
TCBZX79C 22 20.8 23.3 5 55 1 250 0.05 15.4
TCBZX79C 24 22.8 25.6 5 70 1 250 0.05 16.8
TCBZX79C 27 25.1 28.9 2 80 0.5 300 0.05 18.9
TCBZX79C 30 28 32 2 80 0.5 300 0.05 21
TCBZX79C 33 31 35 2 80 0.5 325 0.05 23.1
TCBZX79C 36 34 38 2 90 0.5 350 0.05 25.2
TCBZX79C 39 37 41 2 130 0.5 350 0.05 27.3
TCBZX79C 43 40 46 2 150 0.5 375 0.05 30.1
TCBZX79C 47 44 50 2 170 0.5 375 0.05 32.9
TCBZX79C 51 48 54 2 180 0.5 400 0.05 35.7
TCBZX79C 56 52 60 2 200 0.5 425 0.05 39.2
TCBZX79C 62 58 66 2.5 215 0.5 1000 0.05 43.4
TCBZX79C 68 64 72 2.5 240 0.5 1000 0.05 47.6
TCBZX79C 75 70 80 2.5 255 0.5 1000 0.05 52.5
VF Forward Voltage = 1.5 V Maximum @ IF = 100 mA for all types
VZ @ IZT
(Volts)
Device Type Min Max
IZT
(mA)
ZZT @ IZT
(Ω)
Max
IZK
(mA)
ZZK @ IZK
(Ω)
Max
IR @ VR
(µA)
Max
VR
(Volts)
TCBZX79B 2V4 2.35 2.45 5 100 1 600 100 1
TCBZX79B 2V7 2.65 2.75 5 100 1 600 75 1
TCBZX79B 3V0 2.94 3.06 5 95 1 600 50 1
TCBZX79B 3V3 3.23 3.37 5 95 1 600 25 1
TCBZX79B 3V6 3.53 3.67 5 90 1 600 15 1
TCBZX79B 3V9 3.82 3.98 5 90 1 600 10 1
TCBZX79B 4V3 4.21 4.39 5 90 1 600 5 1
TCBZX79B 4V7 4.61 4.79 5 80 1 500 3 2
TCBZX79B 5V1 5.00 5.20 5 60 1 480 2 2
TCBZX79B 5V6 5.49 5.71 5 40 1 400 1 2
TCBZX79B 6V2 6.08 6.32 5 10 1 150 3 4
TCBZX79B 6V8 6.66 6.94 5 15 1 80 2 4
TCBZX79B 7V5 7.33 7.63 5 15 1 80 1 5
TCBZX79B 8V2 8.04 8.36 5 15 1 80 0.7 5
TCBZX79B 9V1 8.92 9.28 5 15 1 100 0.5 6
TCBZX79B 10 9.80 10.20 5 20 1 150 0.2 7
TCBZX79B 11 10.78 11.22 5 20 1 150 0.1 8
TCBZX79B 12 11.76 12.24 5 25 1 150 0.1 8
TCBZX79B 13 12.74 13.26 5 30 1 170 0.1 8
TCBZX79B 15 14.70 15.30 5 30 1 200 0.05 10.5
TCBZX79B 16 15.68 16.32 5 40 1 200 0.05 11.2
TCBZX79B 18 17.64 18.36 5 45 1 225 0.05 12.6
TCBZX79B 20 19.60 20.40 5 55 1 225 0.05 14
TCBZX79B 22 21.56 22.44 5 55 1 250 0.05 15.4
TCBZX79B 24 23.52 24.48 5 70 1 250 0.05 16.8
TCBZX79B 27 26.46 27.54 2 80 0.5 300 0.05 18.9
TCBZX79B 30 29.40 30.60 2 80 0.5 300 0.05 21
TCBZX79B 33 32.34 33.66 2 80 0.5 325 0.05 23.1
TCBZX79B 36 35.28 36.72 2 90 0.5 350 0.05 25.2
TCBZX79B 39 38.22 39.78 2 130 0.5 350 0.05 27.3
TCBZX79B 43 42.14 43.86 2 150 0.5 375 0.05 30.1
TCBZX79B 47 46.06 47.94 2 170 0.5 375 0.05 32.9
TCBZX79B 51 49.98 52.02 2 180 0.5 400 0.05 35.7
TCBZX79B 56 54.88 57.12 2 200 0.5 425 0.05 39.2
TCBZX79B 62 60.76 63.24 2.5 215 0.5 430 0.05 43.4
TCBZX79B 68 66.64 69.36 2.5 240 0.5 447 0.05 47.6
TCBZX79B 75 73.50 76.50 2.5 255 0.5 470 0.05 52.5
VF Forward Voltage = 1.5 V Maximum @ IF = 100 mA for all types
March 2006 / D Page 3
SEMICONDUCTOR
TAK CHEONG
®
Notes:
1. The type numbers listed have zener voltage min/max limits as shown.
2. For detailed information on price, availability and delivery of nominal zener voltages between the voltages sho wn and tighter
voltage tolerances, contact your nearest Tak Cheong Electronics representative.
3. The z ener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an rms value equal to
10% of the dc zener current (IZT or IZK) is superimposed to IZT or IZK.
Ordering Information
Device Package Quantity
TCBZX79Cxxx
TCBZX79Bxxx Bulk 10,000
TCBZX79CxxxTB
TCBZX79BxxxTB Tape and Ammo 5,000
TCBZX79CxxxTR
TCBZX79BxxxTR Tape and Reel 10,000
TCBZX79Cxxx
TCBZX79Bxxx Others (…contact Tak Cheong sales representatives)
March 2006 / D Page 4
SEMICONDUCTOR
TAK CHEONG
®
Package Outline
Package Case Outline
DO-35 DO-35
Millimeters Inches
DIM
Min Max Min Max
A 0.46 0.55 0.018 0.022
B 3.05 5.08 0.120 0.200
C 25.40 38.10 1.000 1.500
D 1.53 2.28 0.060 0.090
Notes: 1. All dimensions are within JEDEC standard.
2. DO35 polarity denoted by cathode band.
