ee 387508 1 GE SOLID STATE General-Purpose Power Transistors OL De B3a750a1 oo173a4 4 0 7+ 33-15 Q1E 17384 2N5301, 2N5302, 2N5303 High-Current High-Power High-Speed N-P-N Power Transistors Features: @ Specification tor hre and Vce(sat) up to 30A = Current gain-bandwidth product fr = 2 MHz min. att A Low saturation voltage with high beta High dissipation capability The RCA-2N5301, 2N5302 and 2N5303 are epitaxial-base silicon n-p-n transistors intended for a wide variety of high- power, high-current applications, such as power-switching circults, driver and output stages for series and shunt regulators, de-to-de converters, Inverters, and solenoid (hammer)/relay drivers. These devices differ in maximum voltage ratings and Vce(sat), Vee(sat), and Vee characteristics, Atl are supplied in JEDEC TO-204AA hermetic steel packages. MAXIMUM RATINGS, Absolute-Maximum Values: Voed vacccccnevene Veceo(sus) ..... ae eee eee At Te = 25C At Te > 25C At distance = 1/32 in. (0.8 mm) from seating plane for 103 max. ........- * in accordance with JEDEC registration data format JS-6 RDF-2. File Number 1029 TERMINAL DESIGNATIONS c (FLANGE) 9208-27516 JEDEC TO-204AA 2N5301 2N5302 2N5303 40 60 80 Vv 40 60 80 Vv 5 Vv 30 A 50 A 7.5 A 15 A - pe ceneeeeenees 200 Ww derate linearly V.15 WPGC tee Figs.1 & 2 seve eeeawennas ~65 !o 200 C 230 cOL DE 3875081 00173985 b a 3875081 GE SOLID STATE O1E 17385 OD 7 33:/5 General-Purpose Power Transistors 2N5301, 2N5302, 2N5303 ELECTRICAL CHARACTERISTICS, et Case Temperature (Tc) = 25C unless otherwise specified TEST CONDITIONS LIMITS CHARAC- VOLTAGE |CURRENT TERISTIC Vide Adc | 2N5304 2N5302 2ns303 | UNITS Vee | Vee} 'c | fe |Min. | Max. | Min.| Max. | Min. |Max. 40a _ 1, -|- - - *llopo 60? -|[- - 1 - - B08 ~|[- _j- _ 1 40 1,5 - 1] -|- - - *]IcEx 60 1.5 -|{- - to - 80 -1.5 - | - -|- - 1 * IcEX 40 -1.5 _ 10 _ - - - mA Te= 60 1.5 - | - - 10 - - . 150C 80 -15 -j- -|- - 10 40 - 5{ - | - - - *lIcEO 60 -~ |- - 5] - - 80 _ _ - ~ - 5 * lego 5 - 5] - 5} 5 2 ib 40| 40] 40 - 2 10b -|- -|- 15 60 *lhee 3 1sb 16] 6o] is} 60] - 2 20 -|- -|- 5 - 3 30> 5] 5| - - - *| Vegolsus! 0.2 40} ~ 60} so | 4 2 105 -~|{- -|- - hs 2 156 - Ww] - 171 - - * VBE 4 206 - |- -|- - 2.5 4 30b - 3| - 3] - - 10>] 4] - 17] - 17{ = 17 thiis | ie] - 18 2 * Veelsat) gob} 9 _ 26 _ 25 _ _ Vv 206} 4 | - | - -|- - 2.5 woh} 1 | - | o75 | - | o7s] - 1 i isblig | - | - -f- - 1.5 * | Vogisat) 206] 2 | 2] - 2) - - 2ob} 4 | - | - ~|- - 2 30b| 6 | 3] - 3] - - Isfb tp=1s 20 10} - 10} 10 - A nonrep. * TIhel fo amie 10 1 ]- 2] - 2} - 2 +Ih fe _ - _ -. fate 10 1 40 40 40 . * lt, (See Fig.8) | Vocs lo} a)- i] - yoo 1 Tit, 30 10 ye] 2 = 2 - 2 BS *le wo | 1] - 1] ~ tho 1 Resc 20 5 |] - | Jos7s| Joa] - 0.875| C/V * In accordance with JEDEC registration data format JS-6 ROF-1. a Ves b Pulsed; pulse duration = 300 ys, c la, = lay duty factor = 1.8% _-Oo 389x J Ol DE W387508L 0017346 a IT "3a75081 G E SOLID STATE Oie 17386 BD Te SSIS : General-Purpose Power Transistors som 2N5301, 2N5302, 2N5303 COLLECTOR CURRENT (I)A MUST SE LINEARLY WITH INCREASE iN Voeo (MAX) *60V (MAX) 80V 2 6 10 2 wo =? GOLLECTOR-TO-EMITTER VOLTAGE (Voce) V OO 925-29797 Fig. 1 Maximum operating areas for 2N5301, 2N5302, and 2N5303. COLLECTOR -TO~EMITTER VOLTAGE OF MAXIMUM - OPERATING 00 NOT DERATE THE SPECIFIED VALUE CASE TEMPERATURE AT Te "23C OR PERCENTAGE OF RATED CURRENT AT SPECIFIED VOLTAGE DC FORWARD CURRENT TRANSFER RATIO tare) o 2 a 6e, 2 4 6 8p 4 6 too CASE TEMPERATURE (To) C COLLECTOR CURRENT (I}A s28-29798 secs-29re Fig. 2 ~ Derating curves for 2N5301, 2N5302, Fig. 3 Typical de beta characteristics as a and 2N303. function af collector currant for 2N301, 2N5302, and 2N5303. OLLECTOR-TO-EMITTER VOLTAGE (vce) 4 a < I I 3 g 3 E & g 5 5 v o $ % 5 re a S 4 wu 3 3 3 Z e o . > O 0 (05 1 1S 2 COLLECTOR-TO-EMITTER SATURATION VOLTAGE [ce (ean] V BASE-TO-EMITTER VOLTAGE (Vpg)V suts-ante1 9208-29400 Fig, 4 Typical saturation voltage characteristics Fig. Typical transfer characraristics for for 2N5301, 2N5302, and 2N5303. 2N5301, 2N5302, and 2N5303. H3875081 GE SOLID STATE. O1 DE 347soa1 0017987 Oo iy O1E 17387 OT-BB-IS Ie/T gua CASE TEMPERATURE (Te}s 25C, COLLECTOR CURRENT {1c)]A 9205-2002 Flg. 6 ~ Typical delay-time and risa-time charac- teristics as a function of collector current for 2N5301, 2N5202, and 2N5303. +IV---, o -2V INPUT PULSE tr 2008 PW. #10 TO100ps oc+2% General-Purpose Power Transistors ae 2N5301, 2N5302, 2N5303 ay *~ 782 IcsTg+l0 CASE TEMPERATURE 10 COLLECTOR CUARENT (Tc}~A 928-29803 Fig. ? Typical storage-time and fall-time charac- teristics as a function of collector current for 2N5301, 2N&302, and 2N5303. OSCILLOSCOPE re trangistoa fe $ 20.m8 UNDER TEST 2 >10K OSCILLOSCOPE TRANSISTOR =r $2008 UNOER TEST Zz >10K INPUT PULSE D:COLLECTOR -BASE DIODE tr 20m OF N3252 PW. #10 TO100 ys oc2% Vep-4 to) 920S-239804 Fig. 8 Equivalent test circuits for rise-time (a) and fall-time and storage-time (b) measurements for 2N5301, 2N5302, and 2N5303. 391