TIP125/TIP126/TIP127 — PNP Epitaxial Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP125/TIP126/TIP127 Rev. 1.0.0 1
October 2008
TIP125/TIP126/TIP127
PNP Epitaxial Darlington Transistor
• Medium Power Linear Switching Applications
• Complementary to TIP120/121/122
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage : TIP125
: TIP126
: TIP127
- 60
- 80
- 100
V
V
V
VCEO
Collector-Emitter Voltage : TIP125
: TIP126
: TIP127
- 60
- 80
- 100
V
V
V
VEBO Emitter-Base Voltage - 5 V
IC Collector Current (DC) - 5 A
ICP Collector Current (Pulse) - 8 A
IB Base Current (DC) - 120 mA
PC Collector Dissipation (Ta=25°C) 2 W
Collector Dissipation (TC=25°C) 65 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
1.Base 2.Collector 3.Emitter
1TO-220
Equivalent Circuit
B
E
C
R1 R2
R 1 8 kW@
R 2 0.12k W@
TIP125/TIP126/TIP127 — PNP Epitaxial Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP125/TIP126/TIP127 Rev. 1.0.0 2
Electrical Characteristics* Ta=25°C unless otherwise noted
* Pulse Test: Pulse Width£300ms, Duty Cycle£2%
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage
: TIP125
: TIP126
: TIP127
IC = -100mA, IB = 0 -60
-80
-120
V
V
V
ICEO Collector Cut-off Current
: TIP125
: TIP126
: TIP127
VCE = -30V, IB = 0
VCE = -40V, IB = 0
VCE = -50V, IB = 0
-2
-2
-2
mA
mA
mA
ICBO Collector Cut-off Current
: TIP125
: TIP126
: TIP127
VCB = -60V, IE = 0
VCB = -80V, IE = 0
VCB = -100V, IE = 0
-1
-1
-1
mA
mA
mA
IEBO Emitter Cut-off Current VBE = -5V, IC = 0 -2 mA
hFE * DC Current Gain VCE = -3V, IC = 0.5A
VCE = -3V, IC = -3A
1000
1000
VCE(sat) * Collector-Emitter Saturation Voltage IC = -3A, IB = -12mA
IC=-5A, IB=-20mA
-2
-4
V
V
VBE(on) * Base-Emitter On Voltage VCE = -3V, IC = -3A -2.5 V
Cob Output Capacitance VCB = -10V, IE = 0, f =
0.1MHz
300 pF
TIP125/TIP126/TIP127 — PNP Epitaxial Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP125/TIP126/TIP127 Rev. 1.0.0 3
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Output and Input Capacitance
vs. Reverse Voltage
Figure 4. Safe Operating Area
Figure 5. Power Derating
-0.1 -1 -10
100
1k
10k
VCE = 4V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-0.1 -1 -10
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5 IC = 250IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-0.1 -1 -10 -100
10
100
1000
Cob
f = 0.1MHz
VCB[V], COLLECTOR-BASE VOLTAGE
VEB[V], EMITTER-BASE VOLTAGE
Cob[pF] Cib[pF], CAPACITANCE
Cib
-1 -10 -100
-0.01
-0.1
-1
-10
TIP126
TIP127
TIP125
DC
5ms
100ms
500ms
1ms
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
15
30
45
60
75
90
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
TIP125/TIP126/TIP127 — PNP Epitaxial Darlington Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP125/TIP126/TIP127 Rev. 1.0.0 4
Mechanical Dimensions
TO220
TIP125/TIP126/TIP127 PNP Epitaxial Darlington TransistorTIP125/TIP126/TIP127
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP125/TIP126/TIP127 Rev. A1 5
Rev. I31
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