Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR10200C Main Product Characteristics General Description High voltage dual schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. IF(AV) 2x5A VRRM 200V TJ 150oC VF(max) 0.85V MBR10200C is available in TO-220-3, TO-220-3 (2) and TO-220F-3 packages. Features * * * * * Mechanical Characteristics High Surge Capacity 150oC Operating Junction Temperature 10A Total (5A Each Diode Leg) Guard-ring for Stress Protection Pb-free Package * * * * * * Applications * * * Power Supply Output Rectification Power Management Instrumentation TO-220F-3 Case: Epoxy, Molded Epoxy Meets UL 94V-0 @ 0.125in. Weight (Approximately): 1.9Grams (TO-220-3, TO-220-3 (2) and TO-220F-3) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260oC Maximum for 10 Seconds TO-220-3 (Optional) TO-220-3 (2) Figure 1. Package Types of MBR10200C Mar. 2011 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 1 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR10200C Pin Configuration T Package (TO-220-3) (Optional) (TO-220-3 (2)) 3 A2 3 A2 2 K 2 K 1 A1 1 A1 TF Package (TO-220F-3) 3 A2 2 K 1 A1 Figure 2. Pin Configuration of MBR10200C (Top View) A1 K A2 Figure 3. Internal Structure of MBR10200C Mar. 2011 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 2 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR10200C Ordering Information MBR10200C Circuit Type E1: Lead Free G1: Green Package T: TO-220-3 (2) TO-220-3 (Optional) TF: TO-220F-3 Blank: Tube Part Number Package Lead Free TO-220-3 (2) MBR10200CT-E1 TO-220F-3 - Marking ID Green MBR10200CT-G1 Lead Free MBR10200CT-E1 MBR10200CTF-E1 MBR10200CTF-G1 MBR10200CTF-E1 Green Packing Type MBR10200CT-G1 Tube MBR10200CTF-G1 Tube BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green packages. Mar. 2011 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 3 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR10200C Absolute Maximum Ratings (Each Diode Leg) (Note 1) Parameter Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 200 V Average Rectified Forward Current (Rated VR) TC=140oC IF(AV) 5 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20kHz) TC=138oC IFRM 10 A Non Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Half Wave, Single Phase, 60kHz) IFSM 100 A TJ 150 o Storage Temperature Range TSTG -50 to 150 oC Voltage Rate of Change (Rated VR) dv/dt 10000 V/s ESD (Machine Model=C) >400 V ESD (Human Body Model=3B) >8000 V Operating Junction Temperature (Note 2) C Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: The heat generated must be less than the thermal conductivity from Junction to Ambient: dPD/dTJ < 1/JA. Thermal Characteristics Parameter Symbol JC Condition Junction to Case Maximum Thermal Resistance JA Junction to Ambient Mar. 2011 Rev. 1. 4 Value TO-220-3/ TO-220-3 (2) 3.0 TO-220F-3 4.5 TO-220-3/ TO-220-3 (2) 60 TO-220F-3 60 Unit o C/W BCD Semiconductor Manufacturing Limited 4 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR10200C Electrical Characteristics (Each Diode Leg) Parameter Maximum Instantaneous Voltage Drop (Note 3) Condition Forward IF=5A, TC=25oC Maximum Instantaneous Reverse Current (Note 3) Symbol VF IF=5A, TC=125oC Rated DC Voltage, TC=25oC Rated DC Voltage, TC=125oC Value 0.95 0.85 Unit V 0.15 IR mA 15 Note 3: Pulse Test: Pulse Width=300s, Duty Cycle2.0%. Mar. 2011 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 5 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR10200C Typical Performance Characteristics Instantaneout Forward Current (A) 100 10 1 O 0.1 0.01 0.1 25 C O 125 C O 150 C 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Forward Voltage (V) Figure 4. Typical Forward Voltage Per Diode 1000 Reverse Current (uA) 100 10 1 0.1 O 25 C O 125 C O 150 C 0.01 1E-3 0 50 100 150 200 Reverse Voltage (V) Figure 5. Typical Reverse Current Per Diode Mar. 2011 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 6 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR10200C Typical Performance Characteristics 10 Average Forward Current AMPS 9 8 7 6 5 4 3 2 1 0 100 105 110 115 120 125 130 135 140 145 150 155 160 o Case Temperature ( C) Figure 6. Average Forward Current vs. Case Temperature (Per Diode) Mar. 2011 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 7 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR10200C Mechanical Dimensions TO-220-3 Unit: mm(inch) (Optional) 2.580(0.102) 3.380(0.133) 0.550(0.022) 1.350(0.053) 1.160(0.046) 1.760(0.069) 14.230(0.560) 16.510(0.650) 1.500(0.059) 27.880(1.098) 30.280(1.192) 8.520(0.335) 9.520(0.375) 1.850(0.073) 9.660(0.380) 10.660(0.420) 3.560(0.140) 4.060(0.160) 3 0.200(0.008) 7 3.560(0.140) 4.820(0.190) 2.080(0.082) 2.880(0.113) 7 0.381(0.015) 60 0.813(0.032) 8.763(0.345) 60 0.381(0.015) 2.540(0.100) 2.540(0.100) Mar. 2011 Rev. 1. 4 0.356(0.014) 0.406(0.016) BCD Semiconductor Manufacturing Limited 8 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR10200C Mechanical Dimensions (Continued) TO-220-3 (2) Unit: mm(inch) 9.800(0.386) 10.200(0.402) 3.560(0.140) 3.640(0.143) 0.600(0.024) REF 11.100(0.437) REF 1.200(0.047) 1.400(0.055) 1.200(0.047) 1.400(0.055) 6.300(0.248) 6.700(0.264) 1.620(0.064) 1.820(0.072) 9.000(0.354) 9.400(0.370) 3 4.400(0.173) 4.600(0.181) 2.200(0.087) 2.500(0.098) 3 0.700(0.028) 0.900(0.035) 2.540(0.100) REF 12.600(0.496) 13.600(0.535) 1.170(0.046) 1.390(0.055) 9.600(0.378) 10.600(0.417) 3.000(0.118) REF 3 0.400(0.016) 0.600(0.024) 2.540(0.100) REF Mar. 2011 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 9 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR10200C Mechanical Dimensions (Continued) TO-220F-3 9.700(0.382) 10.300(0.406) 3.000(0.119) 3.550(0.140) Unit: mm(inch) 3.000(0.119) 3.400(0.134) 6.900(0.272) 7.100(0.280) 2.350(0.093) 2.900(0.114) 3.370(0.133) 3.900(0.154) 14.700(0.579) 16.000(0.630) 2.790(0.110) 4.500(0.177) 4.300(0.169) 4.900(0.193) 1.000(0.039) 1.400(0.055) 1.100(0.043) 1.500(0.059) 12.500(0.492) 13.500(0.531) 0.550(0.022) 0.900(0.035) 2.540(0.100) 2.540(0.100) Mar. 2011 Rev. 1. 4 0.450(0.018) 0.600(0.024) BCD Semiconductor Manufacturing Limited 10 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. 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