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FQP8N80C / FQPF8N80C / FQPF8N80CYDTU N-Channel QFET(R) MOSFET 800 V, 8.0 A, 1.55 Description Features * 8.0 A, 800 V, RDS(on) = 1.55 (Max.) @ VGS = 10 V, ID = 4.0 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. * Low Gate Charge (Typ. 35 nC) * Low Crss (Typ. 13 pF) * 100% Avalanche Tested D D G D S TO-220 G D S Absolute Maximum Ratings Symbol VDSS ID G TO-220F G FQP8N80C FQPF8N80C Unit V 8 8* A 5.1 5.1 * A 32 32 * A 800 - Continuous (TC = 100C) Drain Current S TC = 25C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current IDM TO-220F Y-formed S - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 8 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) (Note 1) 17.8 4.5 -55 to +150 mJ V/ns W W/C C 300 C dv/dt PD TJ, TSTG TL (Note 3) 30 V 850 mJ 178 1.43 - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering, 1/8" from case for 5 seconds 59 0.48 * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol RJC Parameter Thermal Resistance, Junction-to-Case, Max. RCS Thermal Resistance, Case-to-Sink Typ, Max. RJA Thermal Resistance, Junction-to-Ambient, Max. (c)2003 Fairchild Semiconductor Corporation FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C1 FQP8N80C 0.89 1 FQPF8N80C 2.66 Unit C/W 0.5 -- C/W 62.5 62.5 C/W www.fairchildsemi.com FQP8N80C / FQPF8N80C / FQPF8N80CYDTU -- N-Channel QFET(R) MOSFET December 2013 Part Number FQP8N80C Top Mark FQP8N80C FQPF8N80C FQPF8N80C TO-220F Tube N/A N/A 50 units FQPF8N80CYDTU FQPF8N80C TO-220F (Y-formed) Tube N/A N/A 50 units Electrical Characteristics Symbol Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units TC = 25C unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit 800 -- -- V -- V/C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C -- 0.5 VDS = 800 V, VGS = 0 V -- -- 10 A VDS = 640 V, TC = 125C -- -- 100 A IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 3.0 -- 5.0 V -- 1.29 1.55 -- 5.6 -- S -- 1580 2050 pF -- 135 175 pF -- 13 17 pF On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 4 A gFS Forward Transconductance VDS = 50 V, ID = 4 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 400 V, ID = 8 A, RG = 25 (Note 4, 5) VDS = 640 V, ID = 8 A, VGS = 10 V (Note 4, 5) -- 40 90 ns -- 110 230 ns -- 65 140 ns -- 70 150 ns -- 35 45 nC -- 10 -- nC -- 14 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 8 A ISM -- -- 32 A -- -- 1.4 V VGS = 0 V, IS = 8 A, dIF / dt = 100 A/s -- 690 -- ns -- 8.2 -- C VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 8 A Drain-Source Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge (Note 4) Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 25 mH, IAS = 8 A, VDD = 50 V, RG = 25 , starting TJ = 25C. 3. ISD 8 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C. 4. Pulse test : pulse-width 300 s, duty cycle 2%. 5. Essentially independent of operating temperature. (c)2003 Fairchild Semiconductor Corporation FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C1 2 www.fairchildsemi.com FQP8N80C / FQPF8N80C / FQPF8N80CYDTU -- N-Channel QFET(R) MOSFET Package Marking and Ordering Information VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : 1 1 10 o ID, Drain Current [A] ID, Drain Current [A] 10 0 10 150 C o -55 C o 25 C 0 10 Notes : 1. 250 s Pulse Test 2. TC = 25 -1 10 Notes : 1. VDS = 50V 2. 250 s Pulse Test -1 -1 0 10 10 1 10 10 2 6 4 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 2. Transfer Characteristics Figure 1. On-Region Characteristics 3.0 IDR, Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance 1 10 2.5 VGS = 10V VGS = 20V 2.0 1.5 0 10 150 25 Notes : 1. VGS = 0V 2. 250 s Pulse Test Note : TJ = 25 1.0 -1 0 4 8 12 16 10 20 0.2 0.4 0.6 ID, Drain Current [A] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 2500 1.4 VDS = 160V 1500 Coss 1000 VDS = 400V 10 VGS, Gate-Source Voltage [V] Capacitance [pF] 1.2 12 Ciss Notes : 1. VGS = 0 V 2. f = 1 MHz Crss 500 1.0 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 2000 0.8 VSD, Source-Drain voltage [V] VDS = 640V 8 6 4 2 Note : ID = 8A 0 -1 10 0 10 0 1 10 Figure 5. Capacitance Characteristics (c)2003 Fairchild Semiconductor Corporation FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C1 0 10 20 30 40 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com FQP8N80C / FQPF8N80C / FQPF8N80CYDTU -- N-Channel QFET(R) MOSFET ! (Continued) 1.2 3.0 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 4.0 A 0.5 0.0 -100 200 0 100 150 200 o Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature Operation in This Area is Limited by R DS(on) 2 100 s 1 ID, Drain Current [A] 10 ms DC 10 Notes : -1 10 10 s 100 s 1 1 ms 0 Operation in This Area is Limited by R DS(on) 2 10 10 s 10 10 1 ms 10 ms 0 10 DC Notes : -1 10 o 1. TC = 25 C o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse o 2. TJ = 150 C 3. Single Pulse -2 -2 10 50 TJ, Junction Temperature [ C] 10 ID, Drain Current [A] -50 TJ, Junction Temperature [ C] o 0 1 10 2 10 10 3 10 10 0 10 1 10 2 10 3 10 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 9-2. Maximum Safe Operating Area for FQPF8N80C Figure 9-1. Maximum Safe Operating Area for FQP8N80C 10 ID, Drain Current [A] 8 6 4 2 0 25 50 75 100 125 150 TC, Case Temperature [] Figure 10. Maximum Drain Current vs Case Temperature (c)2003 Fairchild Semiconductor Corporation FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C1 4 www.fairchildsemi.com FQP8N80C / FQPF8N80C / FQPF8N80CYDTU -- N-Channel QFET(R) MOSFET Typical Characteristics ZJC(t), Thermal Response [oC/W] 10 FQP8N80C / FQPF8N80C / FQPF8N80CYDTU -- N-Channel QFET(R) MOSFET Typical Characteristics (Continued) 0 D = 0 .5 0 .2 10 -1 N o te s : 1 . Z J C ( t) = 0 .7 /W M a x . 2 . D u t y F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t) 0 .1 0 .0 5 0 .0 2 0 .0 1 10 s in g le p u l s e -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] ZJC(t), Thermal Response [oC/W] Figure 11-1. Transient Thermal Response Curve for FQP8N80C 10 D = 0 .5 0 N o te s : 1 . Z J C (t) = 2 .1 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t) 0 .2 0 .1 10 0 .0 5 -1 0 .0 2 0 .0 1 10 s in g le p u ls e -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11-2. Transient Thermal Response Curve for FQPF8N80C (c)2003 Fairchild Semiconductor Corporation FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C1 5 www.fairchildsemi.com FQP8N80C / FQPF8N80C / FQPF8N80CYDTU -- N-Channel QFET(R) MOSFET 200nF 12V VGS Same Type as DUT 50K Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on t off tf Figure 13. Resistive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L BVDSS IAS ID RG V 10V GS GS VDD ID (t) VDS (t) VDD DUT tp Time tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms (c)2003 Fairchild Semiconductor Corporation FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C1 6 www.fairchildsemi.com + VDS _ I SD L Driver RG Same Type as DUT VGS VGS ( Driver ) I SD ( DUT ) VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms (c)2003 Fairchild Semiconductor Corporation FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C1 7 www.fairchildsemi.com FQP8N80C / FQPF8N80C / FQPF8N80CYDTU -- N-Channel QFET(R) MOSFET DUT FQP8N80C / FQPF8N80C / FQPF8N80CYDTU -- N-Channel QFET(R) MOSFET Mechanical Dimensions Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-003 (c)2003 Fairchild Semiconductor Corporation FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C1 8 www.fairchildsemi.com FQP8N80C / FQPF8N80C / FQPF8N80CYDTU -- N-Channel QFET(R) MOSFET Mechanical Dimensions Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003 (c)2003 Fairchild Semiconductor Corporation FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C1 9 www.fairchildsemi.com FQP8N80C / FQPF8N80C / FQPF8N80CYDTU -- N-Channel QFET(R) MOSFET Mechanical Dimensions Figure 18. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Y-Formed Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-FA3 (c)2003 Fairchild Semiconductor Corporation FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. 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