MBRS20H100CT thru MBRS20H200CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA 2 TO-263AB (D PAK) Case: TO-263AB (D2PAK) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.4 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted) PARAMETER SYMBOL MBRS MBRS MBRS 20H100CT 20H150CT 20H200CT Unit Maximum repetitive peak reverse voltage VRRM 100 150 200 V Maximum RMS voltage VRMS 70 105 140 V Maximum DC blocking voltage VDC 100 150 200 V Maximum average forward rectified current IF(AV) 20 A Peak repetitive forward current (Rated VR, Square wave, 20KHz) IFRM 20 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A Peak repetitive reverse surge current (Note 1) IRRM Maximum instantaneous forward voltage (Note 2) IF=10A, TJ=25 IF=10A, TJ=125 IF=20A, TJ=25 IF=20A, TJ=125 Maximum reverse current @ rated VR TJ=25 TJ=125 VF IR 1 0.5 0.85 0.88 0.75 0.75 0.95 0.97 0.85 0.85 A V 5 A 2 mA Voltage rate of change (Rated VR) dV/dt Typical thermal resistance RJC 1.5 TJ - 55 to +175 O C TSTG - 55 to +175 O C Operating junction temperature range Storage temperature range 10000 V/s O C/W Note 1: tp = 2.0 s, 1.0KHz Note 2: Pulse test with PW=300s, 1% duty cycle Document Number: DS_D1309041 Version: H13 MBRS20H100CT thru MBRS20H200CT Taiwan Semiconductor ORDERING INFORMATION PART NO. AEC-Q101 PACKING CODE GREEN COMPOUND QUALIFIED MBRS20HxxxCT (Note 1) PACKAGE PACKING D2PAK 800 / 13" Paper reel CODE RN Prefix "H" Suffix "G" C0 2 50 / Tube D PAK Note 1: "xx" defines voltage from 100V (MBRS20H100CT) to 200V (MBRS20H200CT) EXAMPLE AEC-Q101 PREFERRED P/N PART NO. PACKING CODE MBRS20H100CT RN MBRS20H100CT RN MBRS20H100CT RNG MBRS20H100CT RN QUALIFIED MBRS20H100CTHRN MBRS20H100CT H GREEN COMPOUND CODE G DESCRIPTION Green compound RN AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG AVERAGE FORWARD A CURRENT (A) 25 20 15 10 RESISTIVE OR INDUCTIVE LOAD WITH HEATSINK 5 0 0 25 50 75 100 125 150 175 200 PEAK FORWARD SURGE CURRENT (A) FIG.1 FORWARD CURRENT DERATING CURVE 180 8.3ms Single Half Sine Wave JEDEC Method 150 120 90 60 30 0 1 10 CASE TEMPERATURE (oC) FIG. 3 TYPICAL FORWARD CHARACTERISTICS PER LEG FIG. 4 TYPICAL REVERSE CHARACTERISTICS PER LEG INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS FORWARD CURRENT (A) 100 10 100 NUMBER OF CYCLES AT 60 Hz TJ=125 TJ=25 1 PULSE WIDTH=300s 1% DUTY CYCLE 10 TJ=125 1 TJ=75 0.1 0.01 TJ=25 0.001 0.0001 0.1 0 0.2 0.4 0.6 0.8 1 FORWARD VOLTAGE (V) Document Number: DS_D1309041 1.2 1.4 1.6 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version: H13 MBRS20H100CT thru MBRS20H200CT Taiwan Semiconductor FIG. 5 TYPICAL JUNCTION CAPACITANCE FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE PER LEG 100 f=1.0MHz Vsig=50mVp-p TRANSIENT THERMAL IMPEDANCE (/W) JUNCTION CAPACITANCE (pF) A 10000 1000 10 1 0.1 100 0.1 1 10 100 0.01 0.1 1 10 100 T-PULSE DURATION(s) REVERSE VOLTAGE (V) PACKAGE OUTLINE DIMENSIONS DIM. Unit (mm) Unit (inch) Min Max Min Max A - 10.5 - 0.413 B 14.60 15.88 0.575 0.625 C 2.41 2.67 0.095 0.105 D 0.68 0.94 0.027 0.037 E 2.29 2.79 0.090 0.110 F 4.44 4.70 0.175 0.185 G 1.14 1.40 0.045 0.055 H 1.14 1.40 0.045 0.055 I 8.25 9.25 0.325 0.364 J 0.36 0.53 0.014 0.021 K 2.03 2.79 0.080 0.110 SUGGESTED PAD LAYOUT Symbol Unit (mm) Unit (inch) A 10.8 0.425 B 8.3 0.327 C 1.1 0.043 D 3.5 0.138 E 16.9 0.665 F 9.5 0.374 G 2.5 0.098 MARKING DIAGRAM P/N = Specific Device Code G = Green Compound YWW = Date Code F = Factory Code Document Number: DS_D1309041 Version: H13 MBRS20H100CT thru MBRS20H200CT Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D1309041 Version: H13