NPN SILICON PLANAR TRANSISTORS
General Purpose Transistor
Collector Emitter Voltage VCEO 40 60 V
Collector Base Voltage VCBO 50 80 V
Emitter Base Voltage VEBO 6.0 V
Base Current IB500 mA
Collector Current Continuous IC1.0 A
Power Dissipation @ Ta=25ºC PD1.0 W
5.3 mW/ ºC
Power Dissipation @ Tc=25ºC PD6.0 W
34 mW/ ºC
Operating and Storage Junction
Temperature Range Tj, Tstg - 65 to +200 ºC
THERMAL CHARACTERISTICS
Junction to Case Rth (j-c) 29 ºC/W
ELECTRICAL CHARACTERISTICS (T
=25ºC unless specified otherwise )
Collector Emitter Voltage VCEO IC=1mA, IB=0 40 60 80 V
Collector Cut Off Current ICEX VCE=50V, VEB=1.5V 0.1 mA
VCE=80V, VEB=1.5V 0.1 mA
VCE=100V, VEB=1.5V 0.1 mA
TC=150ºC
VCE=30V, VEB=1.5V 1.0 mA
VCE=50V, VEB=1.5V 1.0 mA
VCE=70V, VEB=1.5V 1.0 mA
Collector Cut Off Current ICBO VCB=Rated VCBO, IE=0 0.1 mA
Collector Cut Off Current ICEO VCE=Rated VCEO, IB=0 0.07 mA
Emitter Cut Off Current IEBO VEB=6V, IC=0 0.5 mA
DC Current Gain *hFE IC=50mA, VCE=1V 30
IC=250mA, VCE=1V 30 150
IC=500mA, VCE=1V 30
IC=1A, VCE=1V 15
*Pulse Test: Pulse Width < 300µµs, Duty Cycle < 2%
2N4237_4239Rev121004E
2N4239
80
100
Continental Device India Limited Data Sheet Page 1 of 4
Continental Device India Limited
An ISO/TS 16949 and ISO 9001 Certified Company