SB520SB560 VISHAY Vishay Lite-On Power Semiconductor 5.0A Schottky Barrier Rectifiers Features @ Schottky barrier chip Guard ring die construction for transient protection High surge capability Low power loss, high efficiency Surge overload rating to 150A peak For use in low voltage, high frequency inverters, free wheeling, and polarity protection application High current capability and low forward voltage drop Plastic material has UL flammability classification 94V0 Absolute Maximum Ratings Tj = 25C Repetitive peak reverse voltage SB520 Vrru 20 Vv =Working peak reverse voltage SB530 =VrwMu 30 V =DC Blocking voltage SB540 =VpR 40 V SB550 50 Vv SB560 60 Vv Peak forward surge current lesm 150 A Average forward current TL=100C lEAy 5 A Junction and storage temperature range T=Tstg | -65...4150 | C Electrical Characteristics Tj = 25C Forward voltage IpF=5A SB520-540 Ve 0.55/| V SB550-560 Ve 0.7 Vv Reverse current Tp=25C IR 0.5 | mA Ta=1 00C IR 50 mA Diode capacitance VpR=4V, f=1MHz SB520-540 Cp 550 pF SB550-560 Cp 400 pF Thermal resistance RthJA 10 KAW junction to ambient Rev. A2, 24-Jun-98 1 (4) SB520SB560 Vishay Lite-On Power Semiconductor Characteristics (Tj = 25C unless otherwise specified) 1.0 Resist ~ esistive or <r Inductive Load ~ ra 5 S 08 \ > o Q 3 o Gg 1 5 \ 6 $B520 SB540 5 0.6 = 5 \ i r \ 3 g@ O4 \ 3 w 2 ao 3 $B550 SB560 | 0.2 & > an 0 100 25 50 75 100-125 150 0.1 1.0 10 100 15303 Tamb Ambient Temperature (C ) 15306 Vp Reverse Voltage ( V ) Figure 1. Max. Average Forward Current vs. Figure 4. Typ. Diode Capacitance vs. Reverse Voltage Ambient Temperature 100 ~ Tj = 100C = $B520 SB540 < 10 x E a 1.0 v oO o $B550 SB560 9 = o 0, 5 3 rr cc I a = 00 Tj = 25C IF Pulse Width = 300 ps : 0.001 0 0.2 04 0.6 08 10 0 20 40 60 80 100 120 140 15304 Ve Forward Voltage ( V ) 15307 Percent of Rated Peak Reverse Voltage (%) Figure 2. Typ. Forward Current vs. Forward Voltage Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage gq 150 m Tt ~ Single Half Sine-Wave 5 (JEDEC Method) 120 8 o N oD 5 90 n MN TC o DMN = 60 P~~..J Aa _ x 2 30 Is too 1 10 100 15305 Number of Cycles at 60 Hz Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 2 (4) Rev. A2, 24-Jun-98 cr SB520-SB560 VISHAY Vishay Lite-On Power Semiconductor Dimensions in mm _ A poe | ay poe | ny LO-201AD [im Min Max Ay 25.40 - Ce oe B 1.20 7.50 technical drawings ( 1.20 1.30 according to DIN specifications D 430) 5.30 mes AlL Dimensions in mm Case: Molded Plastic Polarity: Cathode Band Approx. Weight: 0.3 grams Mounting Position: Any Marking: Tupe Number Rev. A2, 24-Jun-98 3 (4) SB520-SB560 wa Vishay Lite-On Power Semiconductor VISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. Itis particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the nextten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. AnnexA, Bandlist oftransitional substances ofthe Montreal Protocol andthe London Amendments respectively 2. Class | and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 4 (4) Rev. A2, 24-Jun-98