FEATURES
MECHANICAL DATA
* Case: Molded plastic
Ideally suited for automatic insertion
Epitaxial planar die construction
Complementary NPN type available(BC817)
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
SOT-23
BC807-16LT1
BC807-25LT1
BC807-40LT1
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified.
0.118(3.00)
0.012(0.30)
0.020(0.50)
0.003(0.08)
0.006(0.15)
0.110(2.80)
0.019(2.00)
0.071(1.80)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR (PNP)
2007-3
MAXIMUM RATINGS ( @ TA = 25oC unless otherwise noted )
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
DC current gain (VCE= -1V, IC= -100mA)
Collector cut-off current (VCB= -45V, IE=0)
Collector cut-off current (VCE= -40V, IB=0)
Emitter cut-off current (VEB= -4V, IC=0)
Collector-emitter saturation voltage (IC= -500mA, IB= -50mA)
Base-emitter saturation voltage (IC= -500mA, IB= -50mA)
Transition frequency (VCE= -5V, IC= -10mA, f= 100MHZ)
CHARACTERISTICS
MARKING:
SYMBOL UNITS
-
-
-
-
-0.2
-0.1
mA
mA
mA
V
V
V
V
V
Collector-base breakdown voltage (IC= -10mA, IE=0)
Collector-emitter breakdown voltage (IC= -10mA, IB=0)
Emitter-base breakdown voltage (IE= -1mA, IC=0)
VCBO
VCEO
VEBO
IEBO
hFE(1)
ICBO
ICEO
VCE(sat)
VBE(sat)
fT
MAX
-50
-45
-5
-
160
100
MIN
16LT1 25LT1 40LT1 16LT1 25LT1 40LT1
0.055(1.40)
0.047(1.20)
- -0.1
-50
-45
-0.5
-55 -150
0.3
-5
-
-
-
-
-1.2
MHZ
-0.7
400100 250250 600
BASE
EMITTER
COLLECTOR
*
*
*
1
1
2
3
2
3
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Collector current-continuous
Collector dissipation
Junction and storage temperature
CHARACTERISTICS VALUESYMBOL UNITS
A
W
oC
V
V
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCEO
VEBO
TJ,Tstg
IC
PC
16LT1--5A; 25LT1--5B; 40LT1--5C
RATING AND CHARACTERISTICS CURVES ( BC807-16LT1/-25LT1/-40LT1 )
Figure2. Gain-Bandwidth Product vs.
Collector Current
Figure4. DC Current Gain vs Collector Current
-I
C
, COLLECTOR CURRENT (mA)
Figure1. Power Derating Curve
T
SB,
SUBSTRATE TEMPERATURE(
O
C)
-Ic, COLLECTOR CURRENT (mA)
Figure3. Collector Sat Voltage vs Collector Current
-Ic,COLLECTOR CURRENT(mA)
f
T
, GAIN BANDWIDTH PRODUCT (MH
Z
)
P
d
, POWER DISSIPATION (mW) -V
CESAT
, COLLECTOR SATURATION VOLTAGE (V)
h
FE
, DC CURRENT GAIN
0
0
100
300
400
100 200
200
100
1000
10
1 1000
10 100
0.2
0.3
0.4
0.5
0.1
0
0.1 110 100 1000
100 1000
110
10
0.1
100
1000
0
20
40
60
80
100
Figure5. Typical Emitter-Collector Characteristics Figure6. Typical Emitter-Collector Characteristics
-VCE, COLLECTOR - EMITTER VOLTAGE (V) -VCE, COLLECTOR-EMITTER VOLTAGE (V)
-Ic, COLLECTOR CURRENT (mA)
-Ic, COLLECTOR CURRENT (mA)
21
0
00 10 20
100
200
300
400
500
TA=25
O
C
f=20MHZ
-VCE=5.0V
1.0V
Typical
limits
at TA=25
O
C
-IC / - IB= 10
150
O
C
25
O
C
-50
O
C
150
O
C
-VCE= 1V
25
O
C
-50
O
C
-IB= 0.2mA
-IB= 0.05mA
3.2 2.8
2
2.4
1.8
1.6
1.4
1.2
0.8
0.4
0.6
0.35
0.3
0.25
0.2
0.15
0.1
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