SGS-THOMSON IRF840/FI MICROELECTRONICS IRF841/Fl N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ky TYPE Voss Ros(on) i) IRF 840 500 V < 0.850 8A IRF840F1 500 V < 0.850 45A IRF 841 450 V < 0.852 8A IRF 841FI 450 V < 0.852 45A TYPICAL Rpg(on) = 0.74 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100C APPLICATIONS a HIGH CURRENT, HIGH SPEED SWITCHING a SWITCH MODE POWER SUPPLIES (SMPS) a CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT TO-220 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM D (2) 6 (1) S$ (3) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRF 840 841 840FI 841Fl Vos Drain-source Voltage (Ves = 0) 500 450 500 450 V Voar |Drain- gate Voltage (Ras = 20 kQ) 500 450 500 450 Vv Ves |Gate-source Voltage + 20 Vv Ip Drain Current (cont.) at Tc = 25 C 8 8 4.5 4.5 A Ip Drain Current (cont.) at Tp = 100 C 5.1 5.1 2.8 2.8 A Ipu(*) |Drain Current (pulsed) 32 32 32 32 A Ptot |Total Dissipation at Te = 25 C 125 40 W Derating Factor 1 0.32 Ww/C Viso |Insulation Withstand Voltage (DC) 2000 Tstg |Storage Temperature -65 to 150 C Tj Max. Operating Junction Temperature 150 C () Pulse width limited by safe operating area November 1996 1/10IRF840/FI - IRF841/Fl THERMAL DATA TO-220 ISOWATT220 Rthj-case |Thermal Resistance Junction-case Max 3.12 C/W Rthj-amb |Thermal Resistance Junction-ambient Max 62.5 C/W Rthe-s Thermal Resistance Case-sink Typ 0.5 C/W T Maximum Lead Temperature For Soldering Purpose 300 C AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive 8 A (pulse width limited by Tj max, 6 < 1%) Eas Single Pulse Avalanche Energy 510 mJ (starting T; = 25 C, Ip = lar, Vop = 25 V) Ear Repetitive Avalanche Energy 13 mJ (pulse width limited by Tj max, 6 < 1%) IAR Avalanche Current, Repetitive or Not-Repetitive 5.1 A (T. = 100 C, pulse width limited by T; max, 5 < 1%) ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. | Max. Unit Vipryoss |Drain-source Ip= 250A Vas=0 Breakdown Voltage for IRF840/840FI 500 Vv for IRF841/841 Fl 450 Vv lpss Zero Gate Voltage Vos = Max Rating 25 HA Drain Current (Ves = 0) |Vps = Max Rating x 0.8 T, = 125C 250 pA lass Gate-body Leakage Ves =+20V +100 nA Current (Vos = 0) ON (*) Symbol Parameter Test Conditions Min. Typ. | Max. Unit Vasith) |Gate Threshold Voltage |Vos= Vas lIp= 250 uA 2 3 4 Vv Rps(on) |Static Drain-source On |Vas=10V In=44A 0.74 0.85 Q Resistance ID(on) On State Drain Current |Vps > Ip(on) X Rps(on)ymax Vas=10V 8 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. | Max. Unit gts (*) | Forward Vos > Ip(on) X Ros(on)max Ip=4.4A] 4.9 6 s Transconductance Ciss Input Capacitance Vos=25V f=1MHz Ves=0 1100 1500 pF Coss Output Capacitance 190 240 pF Crss Reverse Transfer 80 110 pF Capacitance 2/10 Sar SGS-THOMSON Tf MICROELECTRONICSIRF840/Fl - IRF841/Fl ELECTRICAL CHARACTERISTICS (continued) SWITCHING RESISTIVE LOAD Symbol Parameter Test Conditions Min. Typ. Max. Unit ta(on) Turn-on Time Vpp=200 V Ip=4A 40 50 ns tr Rise Time Ri = 4.72 35 43 ns ta(otf) Turn-off Delay Time (see test circuit) 80 100 ns tr Fall Time 20 25 ns Qg Total Gate Charge IDp=8A Veas=10V 75 95 nc Qgs Gate-Source Charge Vpp = Max Rating x 0.8 9 nc Qad Gate-Drain Charge (see test circuit) 39 nc SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit Isp Source-drain Current 8 A Ispm(*) |Source-drain Current 32 A (pulsed) Vsp (#) |Forward On Voltage Isp =8 A Ves=0 2 Vv ter Reverse Recovery Isp = 8A di/dt = 100 A/us 700 ns Time Vpp = 100 V Tj = 150 C Qrr Reverse Recovery 12 pC Charge (*) Pulsed: Pulse duration = 300 us, duty cycle 1.5% () Pulse width limited by safe operating area Safe Operating Area for TO-220 2 #4668 2 468 o o! = = ay D.C. OPERATION IRF&41 2 107 4Oms Ooms aos? 468 Safe Operating Area for ISOWATT220 ocss040 D.C, OPERATION IRF841 IRF&40 GC35050 IRFB40 Vos (VY) 3/10 {7 SGS-THOMSON 7 isienoeuctromcsIRF840/FI - IRF841/Fl Thermal Impedance for TO-220 SC20540 107-1 0.01 SINGLE PULSE 2 ro 1074 107%) 107? 107" #5) Derating Curve for TO-220 Pia (W} 120 80 40 0 50 100 Tense (C) Output Characteristics Gessco Ip(A) 6.5V 4Vv 0 2 4 6 8 VV) 4/10 ky Thermal Impedance for ISOWATT220 GC20521 1071 0.05 0.02 0.01 Zih = & Rinse SINGLE PULSE B= tp/T tpl 1073 107 1077 107%) 107' 10 t(s) Derating Curve for ISOWATT220 Pio (W) 40 30 20 10 0 40 80 120 Trane (C) Output Characteristics 6022370 Ip CA) 16 12 0 10 20 30 40 Vps (V) SGS-THOMSON MICROELECTRONICSIRF840/Fl - IRF841/Fl Transfer Characteristics Transconductance GC22360 Gcesso7o Ip (A) 91(5) 12 Vos >| on xR on 16 T, =-40C 0 T, =25 12 B T, =125C B 6 4 4 2 0 2 4 6 8 Ves () 0 2 4 #% 8 10 12 I,jfa) Static Drain-source On Resistance Maximum Drain Current vs Temperature Rosfon) | (A) GC21630 (2) 2.0 8 1.5 6 1.0 4 0.5 2 0 a ao 4 B 12 CI) 25 50 75 100 125 1, (C} Gate Charge vs Gate-source Voltage Capacitance Variations Gtz2410 Ves CV) C(pF) 10 2000 1500 1000 500 0 20 40 60 80 100 O,(nc) 0 10 20-3040 Vos () 5/10 k SGS-THOMSON Tf MICROELECTRONICSIRF840/FI - IRF841/Fl Normalized Breakdown Voltage vs Temperature Vigr)oss: norm 1.1 1.0 0.9 0.8 50 0 30 100 T, (*C) Source-drain Diode Forward Characteristics GC22440 Isa(A) T)=125C 16 -40C 0 04 06 O8 1.0 1.2 Vgp() Unclamped Inductive Load Test Circuit Normalized On Resistance vs Temperature GC22430 Ros(on) norm Ves10V Ip =4.44 2.0 1.6 1.2 0.8 0.4 350 0 3d 100 Ty (C) Unclamped Inductive Waveforms VieR)Dss Yo o 4 2200 3.3 o BF uF Vpp a lp E a Ld mz o_ = a Mi | | Ht D.U.T. Py a_i scosoan 5005970 6/10 iar SGS-THOMSON vf MICROELECTRONICSIRF840/Fl - IRF841/Fl Switching Time Test Circuit Gate Charge Test Circuit Yop 12av | 47K 0 * 4 Rt 2200 3.3 mF oo Vp Ves JL | : i & DUT. Pa =z I scons 7/10 {7 SGS-THOMSON 7 isienoeuctromcsIRF840/FI - IRF841/Fl | TO-220 MECHANICAL DATA mm 8/10 A3P GtemouactronicsIRF840/Fl - IRF841/Fl | ISOWATT220 MECHANICAL DATA mm 9/10 A3P Gtemouactronics