1
RHRG75120
75A, 1200V Hyperfast Diode
The RHRG75120 is a hyperfast diode with soft recovery
characteristics (trr < 85ns). It has half the recovery time of
ultrafast diodes and is silicon nitride passivated
ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of high frequency switching
power supplies and other power switching applications. Its
low stored charge and hyperfast soft recovery characteristic
minimize ringing and electrical noise in many power
switching circuits, thus reducing power loss in the switching
transistors.
Formerly developmental type TA49042.
Symbol
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . .<85ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging JEDEC STYLE TO-247
Ordering Information
PART NUMBER PACKAGE BRAND
RHRG75120 TO-247 RHRG75120
NOTE: When ordering, use the entire part number.
K
A
CATHODE
CATHODE
ANODE
METAL)
(BOTTOM SIDE
Absolute Maximum Ratings TC = 25oC
RHRG75120 UNITS
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 1200 V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM 1200 V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR1200 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IF(AV) 75 A
(TC = 42oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM 150 A
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM 500 A
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD190 W
Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL 50 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ-65 to 175 oC
Data Sheet January 2000 File Number 3414.3
1-888-INTERSIL or 321-724-7143 |Copyright © Intersil Corporation 2000
2
Electrical Specifications TC = 25oC, Unless Otherwise Specified
SYMBOL TEST CONDITION MIN TYP MAX UNITS
VFIF = 75A - - 3.2 V
IF = 75A, TC = 150οC - - 2.6 V
IRVR = 1200V - - 250 µA
VR = 1200V, TC = 150οC- - 2mA
trr IF = 1A, dIF/dt = 100A/µs- -85ns
IF = 75A, dIF/dt = 100A/µs - - 100 ns
taIF = 75A, dIF/dt = 100A/µs - 60 - ns
tbIF = 75A, dIF/dt = 100A/µs - 25 - ns
RθJC - - 0.8 oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 6), summation of ta+t
b.
ta = Time to reach peak reverse current (See Figure 6).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6).
RθJC = Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
400
100
10
10 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
IF, FORWARD CURRENT (A)
VF, FORWARD VOLTAGE (V)
175oC
100oC
25oC
1000
100
10
1
0.1 0 200 400 600 800 1000 1200
VR, REVERSE VOLTAGE (V)
IR, REVERSE CURRENT (µA)
175oC
100oC
25oC
RHRG75120
3
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
FIGURE 3. trr,t
aAND tbCURVES vs FORWARD CURRENT FIGURE 4. CURRENT DERATING CURVE
Typical Performance Curves (Continued)
100
80
60
40
20
011080
IF, FORWARD CURRENT (A)
t, TIME (ns)
tb
ta
trr
TC = 25oC, dIF/dt = 100A/µs80
60
40
20
25 50 75 100 125 150 175
0
DC
SQ. WAVE
TC, CASE TEMPERATURE (oC)
IF(AV), REVERSE CURRENT (A)
Test Circuits and Waveforms
FIGURE 5. trr TEST CIRCUIT FIGURE 6. trr WAVEFORMS AND DEFINITIONS
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT FIGURE 8. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
RG
L
VDD
IGBT
CURRENT
SENSE
DUT
VGE t1
t2
VGE AMPLITUDE AND
t1 AND t2CONTROL IF
RG CONTROL dIF/dt
+
-
dt
dIF
IFtrr
tatb
0
IRM
0.25 IRM
DUT
CURRENT
SENSE +
LR
VDD
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
Q1= IGBT (BVCES > DUT VR(AVL))
-
VDD
Q1
IMAX = 1.6A
L = 40mH
IV
t0t1t2
IL
VAVL
t
IL
RHRG75120
