VBO 22 Single Phase Rectifier Bridge VRSM V 900 1300 1700 1900 VRRM V 800 1200 1600 1800 IdAV = 21 A VRRM = 800-1800 V - + Type VBO 22-08NO8 VBO 22-12NO8 VBO 22-16NO8 VBO 22-18NO8 ~ ~ ~ - Symbol Conditions IdAV IdAVM TC = 85C, module TC = 63C, module IFSM TVJ = 45C; VR = 0 t = 10 ms t = 8.3 ms TVJ = TVJM; VR = 0 I2t Maximum Ratings Features * Package with 1/4" fast-on terminals * Isolation voltage 3000 V~ * Planar passivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered E 72873 A A (50 Hz) (60 Hz) 380 440 A A t = 10 ms t = 8.3 ms (50 Hz) (60 Hz) 360 400 A A TVJ = 45C; VR = 0 t = 10 ms t = 8.3 ms (50 Hz) (60 Hz) 725 800 A2s A2s TVJ = TVJM; VR = 0 t = 10 ms t = 8.3 ms (50 Hz) (60 Hz) 650 650 As A2s -40...+150 150 -40...+150 C C C 2500 3000 V~ V~ * Easy to mount with one screw * Space and weight savings * Improved temperature & power cycling 2 10% 18 10% Nm lb.in. Dimensions in mm (1 mm = 0.0394") 22 g 2 VISOL 50/60 Hz, RMS IISOL < 1 mA Md Mounting torque (M5) (10-32 UNF) Weight Typ. Symbol Conditions IR VR = VRRM TVJ = 25C TVJ = TVJM 0.3 5.0 mA mA VF IF = 150 A TVJ = 25C 2.2 V VT0 rt For power-loss calculations only 0.85 12 V mW RthJC per diode; 120 el. per module per diode; 120 el. per module 8.20 2.05 9.40 2.35 K/W K/W K/W K/W Creeping distance on surface Creepage distance in air Max. allowable acceleration 12.7 9.4 50 mm mm m/s2 dS dA a + 17 21 TVJ TVJM Tstg RthJH ~ t = 1 min t=1s * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages 6.3 x 0.8 Characteristic Values Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. (c) IXYS All rights reserved Applications D B E A 20120814d 1-2 VBO 22 103 30 1.8 TVJ = 45C 25 20 IF IFSM [A] TVJ = 150C 380 1.6 340 1.4 TVJ = 150C IFSM 15 [A] [A] TVJ = 45C 1.2 I 2t 1.0 [A s] 0 VRRM 10 0.8 1/2 VRRM TVJ = 25C 5 0.6 0 1 1 VRRM 0.4 100 1.5 101 VF [V] 102 102 103 2 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 0.45 30 70 1.95 20 30 90 3.95 DC 20 110 sin. 180 rec. 120 9.95 20 IdAV [C] [A] 130 rec. 30 10 TC 10 rec. 60 10 10 DC sin. 180 rec. 120 rec. 60 rec. 30 0.05 = RthCA [K/W] 40 [W] 6 Fig. 3 I2t versus time (1-10 ms) per diode or thyristor 50 0.95 4 t [ms] 50 0 1 t [ms] Fig. 1 Forward current versus voltage drop per diode Ptot TVJ = 150C 2 0 50 100 150 150 Tamb [K] IFAVM [A] Fig. 4 Power dissipation vs. direct output current and ambient temperature 0 50 100 150 200 TC [C] Fig. 5 Maximum forward current at case temperature 10 ZthJK 8 Zth ZthJC 6 [k/W] 4 2 0,01 0,1 1 10 t [s] Fig. 6 Transient thermal impedance per diode or thyristor, calculated IXYS reserves the right to change limits, test conditions and dimensions. (c) IXYS All rights reserved 20120814d 2-2