BZT52C2V0S - BZT52C39S
Document number: DS30093 Rev. 20 - 2
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February 2017
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BZT52C2V0S - BZT52C39S
SURFACE MOUNT ZENER DIODE
Features
Planar Die Construction
Small Surface Mount Package
Ideally Suited for Automated Assembly Processes
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Notes 3 & 4)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOD323
Case Material: Molded Plastic.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe
(Lead Free Plating).
Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.0049 grams (Approximate)
Ordering Information (Note 5)
Part Number
Case
Packaging
(Type Number)-7-F*
SOD323
3,000/Tape & Reel
(Type Number)Q-7-F*
SOD323
3,000/Tape & Reel
*Add “-7-F” to the appropriate type number in Electrical Characteristics Table, example: 6.2V Zener – BZT52C6V2S-7-F.
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Product manufactured with Date Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Products manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Top View
SOD323
XX = Product Type Marking Code for
SAT (Shanghai Assembly / Test site)
(See Electrical Characteristics Table)
XX = Product Type Marking Code for
CAT (Chengdu Assembly / Test site)
(See Electrical Characteristics Table)
XX
XX
BZT52C2V0S - BZT52C39S
Document number: DS30093 Rev. 20 - 2
2 of 5
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February 2017
© Diodes Incorporated
BZT52C2V0S - BZT52C39S
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Symbol
Value
Unit
Forward Voltage (Note 6) @IF = 10mA
VF
0.9
V
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 7)
PD
200
mW
Thermal Resistance, Junction to Ambient Air (Note 7)
RJA
625
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Type Number
Marking
Code
Zener Voltage
Range (Note 4)
Maximum Zener Impedance
f = 1kHz
Maximum
Reverse Current
(Note 6)
Temperature
Coefficient of
Zener Voltage
@IZT = 5mA
mV/°C
VZ @IZT
IZT
ZZT @IZT
ZZK @IZK
IZK
IR
@VR
Nom (V)
Min (V)
Max (V)
(mA)
Ω
mA
uA
V
Min
Max
BZT52C2V0S
WY
2.0
1.91
2.09
5
100
600
1.0
150
1.0
-3.5
0
BZT52C2V4S
WX
2.4
2.20
2.60
5
100
600
1.0
50
1.0
-3.5
0
BZT52C2V7S
W1
2.7
2.5
2.9
5
100
600
1.0
20
1.0
-3.5
0
BZT52C3V0S
W2
3.0
2.8
3.2
5
95
600
1.0
10
1.0
-3.5
0
BZT52C3V3S
W3
3.3
3.1
3.5
5
95
600
1.0
5
1.0
-3.5
0
BZT52C3V6S
W4
3.6
3.4
3.8
5
90
600
1.0
5
1.0
-3.5
0
BZT52C3V9S
W5
3.9
3.7
4.1
5
90
600
1.0
3
1.0
-3.5
0
BZT52C4V3S
W6
4.3
4.0
4.6
5
90
600
1.0
3
1.0
-3.5
0
BZT52C4V7S
W7
4.7
4.4
5.0
5
80
500
1.0
2
2.0
-3.5
0.2
BZT52C5V1S
W8
5.1
4.8
5.4
5
60
480
1.0
1
2.0
-2.7
1.2
BZT52C5V6S
W9
5.6
5.2
6.0
5
40
400
1.0
3
2.0
-2.0
2.5
BZT52C6V2S
WA
6.2
5.8
6.6
5
10
150
1.0
2
4.0
0.4
3.7
BZT52C6V8S
WB
6.8
6.4
7.2
5
15
80
1.0
1
4.0
1.2
4.5
BZT52C7V5S
WC
7.5
7.0
7.9
5
15
80
1.0
0.7
5.0
2.5
5.3
BZT52C8V2S
WD
8.2
7.7
8.7
5
15
80
1.0
0.5
5.0
3.2
6.2
BZT52C9V1S
WE
9.1
8.5
9.6
5
15
100
1.0
0.2
6.0
3.8
7.0
BZT52C10S
WF
10
9.4
10.6
5
20
150
1.0
0.1
7.0
4.5
8.0
BZT52C11S
WG
11
10.4
11.6
5
20
150
1.0
0.1
8.0
5.4
9.0
BZT52C12S
WH
12
11.4
12.7
5
25
150
1.0
0.1
8.0
6.0
10.0
BZT52C13S
WI
13
12.4
14.1
5
30
170
1.0
0.1
8.0
7.0
11.0
BZT52C15S
WJ
15
13.8
15.6
5
30
200
1.0
0.1
10.5
9.2
13.0
BZT52C16S
WK
16
15.3
17.1
5
40
200
1.0
0.1
11.2
10.4
—
BZT52C18S
WL
18
16.8
19.1
5
45
225
1.0
0.1
12.6
12.4
—
BZT52C20S
WM
20
18.8
21.2
5
55
225
1.0
0.1
14.0
14.4
—
BZT52C22S
WN
22
20.8
23.3
5
55
250
1.0
0.1
15.4
16.4
—
BZT52C24S
WO
24
22.8
25.6
5
70
250
1.0
0.1
16.8
18.4
—
BZT52C27S
WP
27
25.1
28.9
2
80
300
0.5
0.1
18.9
21.4
—
BZT52C30S
WQ
30
28.0
32.0
2
80
300
0.5
0.1
21.0
24.4
—
BZT52C33S
WR
33
31.0
35.0
2
80
325
0.5
0.1
23.1
27.4
—
BZT52C36S
WS
36
34.0
38.0
2
90
350
0.5
0.1
25.2
30.4
—
BZT52C39S
WT
39
37.0
41.0
2
130
350
0.5
0.1
27.3
33.4
—
Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. Part mounted on FR-4 PC board with recommended pad layout, as per http://www.diodes.com/package-outlines.html.
BZT52C2V0S - BZT52C39S
Document number: DS30093 Rev. 20 - 2
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BZT52C2V0S - BZT52C39S
T , AMBIENT TEMPERATURE, °C
Fig. 1 Power Derating Curve
A
P , POWER DISSIPATION (mW)
D
200
100
0
300
0120 200
40 80 160
Note 7
0
10
20
30
40
50
0 1 2 3 4 5 6 78 9 10
I , ZENER CURRENT (mA)
Z
V , ZENER VOLTAGE (V)
Fig. 2 Typical Zener Breakdown Characteristics
Z
T = 25°C
JC2V7
C3V3
C3V9
C4V7
C5V6
C6V8
C8V2
Test Current I
5.0mA Z
C2V0
0
10
20
30
0
I , ZENER CURRENT (mA)
Z
V , ZENER VOLTAGE (V)
Fig. 3 Typical Zener Breakdown Characteristics
Z
10 20 30 40
T = 25°C
J
Test current I
5mA Z
C10
C12
C18
C22
C27
C33 C36
C15
C39
C , TOTAL CAPACITANCE (pF)
T
10
100
1,000
10 100
1V , NOMINAL ZENER VOLTAGE (V)
Fig. 4 Typical Total Capacitance vs. Nominal Zener Voltage
Z
T = 25 °C
J
V = 1V
R
V = 2V
R
V = 1V
R
V = 2V
R
BZT52C2V0S - BZT52C39S
Document number: DS30093 Rev. 20 - 2
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BZT52C2V0S - BZT52C39S
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOD323
SOD323
Dim
Min
Max
Typ
A1
--
0.10
0.05
A2
1.00
1.10
1.05
b
0.25
0.35
0.30
c
0.10
0.15
0.11
D
1.20
1.40
1.30
E
1.60
1.80
1.70
He
2.30
2.70
2.50
L
0.20
0.40
0.30
a
0º
8º
--
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOD323
Dimensions
Value (in mm)
X
0.590
X1
2.700
Y
0.450
D
He
A2
E
L
c
A1
b
a
Y
X
X1
BZT52C2V0S - BZT52C39S
Document number: DS30093 Rev. 20 - 2
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February 2017
© Diodes Incorporated
BZT52C2V0S - BZT52C39S
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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