PAGE . 1REV.0.0-AUG.4.2008
2N7002DW
FEATURES
• RDS(ON), VGS@10V,IDS@500mA=5Ω
• RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
60V N-Channel Enhancement Mode MOSFET
M aximum RATINGS a nd Thermal Characteristics (TA=25OC unless otherwise noted )
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
P AN JIT RESER VES THE RIGHT T O IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
RETEMARAPlobmyStimiLstinU
egatloVecruoS-niarDV
SD
06V
egatloVecruoS-etaGV
SG
+ 02V
tnerruCniarDsuounitnoCI
D
511Am
tnerruCniarDdesluP
)1
I
MD
008Am
noitapissiDrewoPmumixaM T
A
52=
O
C
T
A
57=
O
CP
D
002
021 Wm
erutarepmeTegarotSdnanoitcnuJgnitarepO
egnaR T
J
T,
GTS
051+ot55-
O
C
)detnuomBCP(ecnatsiseRlamrehTtneibmAot-noitcnuJ
2
R
θAJ
526
O
W/C
0.018(0.45)
0.006(0.15)
0.010(0.25)
0.087(2.20)
0.078(2.00)
0.010(0.25)
0.003(0.08)
• Case: SOT-363 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Apporx. Weight: 0.0002 ounces , 0.006grams
• Marking : 702
PAGE . 2REV.0.0-AUG.4.2008
2N7002DW
ELECTRICAL CHARACTERISTICS
retemaraPlobmySnoitidnoCtseT.niM.pyT.xaMstinU
citatS
nwodkaerBecruoS-niarD
egatloV VB
SSD
V
SG
I,V0=
D
Au01=06--V
egatloVdlohserhTetaGV
)ht(SG
V
SD
V=
SG
I,
D
Au052=1-5.2V
etatS-nOecruoS-niarD
ecnatsiseR R
)no(SD
V
SG
I,V5.4=
D
Am57=--5.7 Ω
etatS-nOecruoS-niarD
ecnatsiseR R
)no(SD
V
SG
I,V01=
D
Am005=--5
niarDegatloVetaGoreZ
tnerruC I
SSD
V
SD
V,V06=
SG
V0=--1Au
egakaeLydoBetaGI
SSG
V
SG
=+ V,V02
SD
V0=--+001An
ecnatcudnocsnarTdrawroFg
Sf
V
SD
I,V51=
D
Am052=002--Sm
cimanyD
egrahCetaGlatoTQ
g
V
SD
I,V51=
D
Am005=
V
SG
V5=
-6.07.0
CnegrahCecruoS-etaGQ
sg
-1.0-
egrahCniarD-etaGQ
dg
-80.0-
emiTyaleDnO-nruTt
no
V
DD
R,V01=
L
02= Ω
I
D
V,Am005=
NEG
V01=
R
G
01= Ω
-951
sn
emiTyaleDffO-nruTt
ffo
-1262
ecnaticapaCtupnIC
ssi
V
SD
V,V52=
SG
V0=
HM0.1=f
Z
--05
Fp
ecnaticapaCtuptuOC
sso
--52
refsnarTesreveR
ecnaticapaC C
ssr
--5
edoiDniarD-ecruoS
drawroFedoiD.xaM
tnerruC I
s
---052Am
egatloVdrawroFedoiDV
DS
I
S
V,Am052=
SG
V0=- 39.02.1V
VDD
VOUT
VIN
RG
RL
Switching
Test Circuit
Gate Charge
Test Circuit
VDD
VGS
RG
RL
1mA
PAGE . 3REV.0.0-AUG.4.2008
2N7002DW
Fig. 1-TYPICAL FORWARD CHARACTERISTIC
FIG.1- Output Characteristic
Typical Characteristics Curves (T =25 C,unless otherwise noted)
A
O
FIG.2- Transfer Characteristic
FIG.3- On Resistance vs Drain Current
FIG.4- On Resistance vs Gate to Source Voltage
FIG.5- On Resistance vs Junction Temperature
0
0.2
0.4
0.6
0.8
1
1.2
012345
V
DS
- Drain-to-Source Voltage (V)
ID- Drain-to-Source Current (A)
V = 10V ~ 6.0V
GS
4.0V
3.0V
5.0V
0
0.2
0.4
0.6
0.8
1
1.2
0123456
V
GS
- Gate-to-Source Voltage (V)
ID- Drain Source Current (A)
V =10VDSV =10VDSV =10VDS
T =25 CJO
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50 -25 0 25 50 75 100 125 150
T
J
- Junction Temperature (
o
C)
RDS(ON) - On-Resistance(Normalized)
V =10V
I =500mA
GS
D
0
2
4
6
8
10
2345678910
VGS - Gate-to-Source Voltage (V)
I =500mAD
T =125 CJO
T =25 CJO
R - On-Resistance ( )
DS(ON)
W
0
1
2
3
4
5
0 0.2 0.4 0.6 0.8 1 1.2
ID- Drain Current (A)
V =10VGS
V =4.5VGS
R - On-Resistance ( )
DS(ON)
W
PAGE . 4REV.0.0-AUG.4.2008
2N7002DW
Fig.6 - Gate Charge Waveform
Fig.8 - Threshold Voltage vs Temperature
Fig.7 - Gate Charge
Fig.9 - Breakdown Voltage vs Junction Temperature
Fig.10 - Source-Drain Diode Forward Voltage
QgdQgs Qg
Qsw
Vgs(th)
Vgs
Qg
Qg(th)
0.01
0.1
1
10
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
V
SD
- Source-to-Drain Voltage (V)
I
S
- Source Current (A)
V =0V
GS
T =125 C
J
O
T =25 C
J
O
T =-55 C
J
O
0.6
0.7
0.8
0.9
1
1.1
1.2
-50 -25 0 25 50 75 100 125 150
T
J
- Junction Temperature (
o
C)
V
th
- G-S Threshold Voltage (NORMALIZED)
I =250uA
D
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1
Q
g
-GateCharge(nC)
V
GS
- Gate-to-Source Voltage (V)
V =15V
I =500mA
DS
D
64
65
66
67
68
69
70
71
72
73
-50 -25 0 25 50 75 100 125 150
T
J
- Junction Temperature (
o
C)
BV
DSS
- Breakdown Voltage (V)
I =250uA
D
PAGE . 5
REV.0.0-AUG.4.2008
MOUNTING PAD LAYOUT
• Packing information
T/R - 10K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
ORDER INFORMATION
LEGAL STATEMENT
Copyright PanJit International, Inc 2011
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
2N7002DW
SOT-363
0.018
(0.45)
0.020
(0.50)
0.075
(1.90)
0.026
(0.65)
0.026
(0.65)
Unit：inch(mm)