2011-08-19
1
BCR116...
NPN Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1=4.7 kΩ, R2=47 kΩ)
• BCR116S: Two internally isolated
transistors with good matching
in one multichip package
• BCR116S: For orientation in reel see
package information below
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BCR116
BCR116W
BCR116S
EHA07174
654
321
C1 B2 E2
C2B1E1
1
R
R
2
R
1
R
2
TR1 TR2
EHA07184
3
21
C
EB
R1
R2
Type Marking Pin Configuration Package
BCR116
BCR116S
BCR116W
WGs
WGs
WGs
1=B
1=E1
1=B
2=E
2=B1
2=E
3=C
3=C2
3=C
-
4=E2
-
-
5=B2
-
-
6=C1
-
SOT23
SOT363
SOT323
2011-08-19
2
BCR116...
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 50 V
Collector-base voltage VCBO 50
Input forward voltage Vi(fwd) 30
Input reverse voltage Vi(rev) 5
Collector current IC100 mA
Total power dissipation-
BCR116, TS ≤ 102°C
BCR116S, TS ≤ 115°C
BCR116W, TS ≤ 124°C
Ptot
200
250
250
mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1)
BCR116
BCR116S
BCR116W
RthJS
≤ 240
≤ 140
≤ 105
K/W
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2011-08-19
3
BCR116...
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 100 µA, IB = 0
V(BR)CEO 50 - - V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO 50 - -
Collector-base cutoff current
VCB = 40 V, IE = 0
ICBO - - 100 nA
Emitter-base cutoff current
VEB = 5 V, IC = 0
IEBO - - 155 µA
DC current gain1)
IC = 5 mA, VCE = 5 V
hFE 70 - - -
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
VCEsat - - 0.3 V
Input off voltage
IC = 100 µA, VCE = 5 V
Vi(off) 0.4 - 0.8
Input on voltage
IC = 2 mA, VCE = 0.3 V
Vi(on) 0.5 - 1.4
Input resistor R13.2 4.7 6.2 kΩ
Resistor ratio R1/R20.09 0.1 0.11 -
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
fT- 150 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb - 3 - pF
1Pulse test: t < 300µs; D < 2%
2011-08-19
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BCR116...
DC current gain hFE = ƒ(IC)
VCE = 5V (common emitter configuration)
10 -4 10 -3 10 -2 10 -1
A
IC
0
10
1
10
2
10
3
10
hFE
-40 °C
-25 °C
25 °C
85 °C
125 °C
Collector-emitter saturation voltage
VCEsat = ƒ(IC), IC/IB = 20
10 -3 10 -2 10 -1
A
IC
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
V
0.5
Vcesat
-40 °C
-25 °C
25 °C
85 °C
125 °C
Input on Voltage Vi(on) = ƒ(IC)
VCE = 0.3V (common emitter configuration)
10 -5 10 -4 10 -3 10 -2 10 -1
A
IC
-1
10
0
10
1
10
V
Vi(on)
-40 °C
-25 °C
25 °C
85 °C
125 °C
Input off voltage Vi(off) = ƒ(IC)
VCE = 5V (common emitter configuration)
10 -5 10 -4 10 -3 10 -2 10 -1
A
IC
-1
10
0
10
1
10
V
Vi(off)
-40 °C
-25 °C
25 °C
85 °C
125 °C
2011-08-19
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BCR116...
Total power dissipation Ptot = ƒ(TS)
BCR116
0 15 30 45 60 75 90 105 120 °C 150
TS
0
25
50
75
100
125
150
175
200
225
250
mW
300
Ptot
Total power dissipation Ptot = ƒ(TS)
BCR116S
0 15 30 45 60 75 90 105 120 °C 150
TS
0
25
50
75
100
125
150
175
200
225
250
mW
300
Ptot
Total power dissipation Ptot = ƒ(TS)
BCR116W
0 15 30 45 60 75 90 105 120 °C 150
TS
0
25
50
75
100
125
150
175
200
225
250
mW
300
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
BCR116
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
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BCR116...
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
BCR116
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
-
Ptotmax / PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Puls Load RthJS = ƒ (tp)
BCR116S
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
BCR116S
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
-
Ptotmax / PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Puls Load RthJS = ƒ (tp)
BCR116W
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
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BCR116...
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
BCR116W
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
-
Ptotmax / PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
2011-08-19
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BCR116...
Package SOT23
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
EH
s
BCW66
Type code
Pin 1
0.8
0.9 0.91.3
0.8 1.2
0.25
M
BC
1.9
-0.05
+0.1
0.4
±0.1
2.9
0.95
C
B
0...8˚
0.2 A
0.1 MAX.
10˚ MAX.
0.08...0.15
1.3
±0.1
10˚ MAX.
M
2.4
±0.15
±0.1
1
A
0.15 MIN.
1)
1) Lead width can be 0.6 max. in dambar area
12
3
3.15
4
2.65
2.13
0.9
8
0.2
1.15
Pin 1
Manufacturer
2005, June
Date code (YM)
2011-08-19
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BCR116...
Package SOT323
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
1.25
±0.1
0.1 MAX.
2.1
±0.1
0.15 +0.1
-0.05
0.3+0.1
±0.1
0.9
12
3
A
±0.2
2
-0.05
0.650.65
M
3x
0.1
0.1 MIN.
0.1
M
0.2 A
0.2
4
2.15 1.1
8
2.3
Pin 1
Pin 1
2005, June
Date code (YM)
BCR108W
Type code
0.6
0.8
1.6
0.65
0.65
Manufacturer
2011-08-19
10
BCR116...
Package SOT363
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (Year/Month)
BCR108S
Type code
Pin 1 marking
Laser marking
0.3
0.70.9
0.65
0.65
1.6
0.2
4
2.15 1.1
8
2.3
Pin 1
marking
+0.1
0.2
1
6
23
5 4
±0.2
2
+0.1
-0.05
0.15
±0.1
1.25
0.1 MAX.
0.9 ±0.1
A
-0.05 6x
0.1 M
0.650.65
2.1
±0.1
0.1
0.1 MIN.
M
0.2 A
Pin 1
marking
2011-08-19
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BCR116...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
