2N5820 2N5822 NPN
2N5821 2N5823 PNP
COMPLEMENTARY
SILICON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5820 series
devices are epoxy molded complementary silicon
small signal transistors manufactured by the epitaxial
planar process designed for general purpose amplifier
applications where a high collector current rating is
required.
MARKING: FULL PART NUMBER
TO-92-18R CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL UNITS
Collector-Base Voltage VCBO 70 V
Collector-Emitter Voltage VCES 70 V
Collector-Emitter Voltage VCEO 60 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 750 mA
Peak Collector Current ICM 1.0 A
Power Dissipation PD 625 mW
Power Dissipation (TC=25°C) PD 1.5 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance JA200°C/W
Thermal Resistance JC83.3°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=25V 100 nA
ICBO V
CB=25V, TA=100°C 15 A
IEBO V
EB=5.0V 10 A
BVCES I
C=10µA 70 V
BVCEO I
C=10mA 60 V
BVEBO I
E=10µA 5.0 V
VCE(SAT) I
C=500mA, IB=50mA 0.75 V
VBE(SAT) I
C=500mA, IB=50mA 1.2 V
VBE(ON) V
CE=2.0V, IC=500mA 0.6 1.1 V
hFE V
CE=2.0V, IC=2.0mA (2N5820, 21) 60 120
hFE V
CE=2.0V, IC=2.0mA (2N5822, 23) 100 250
hFE V
CE=2.0V, IC=500mA (2N5820, 21) 20
hFE V
CE=2.0V, IC=500mA (2N5822, 23) 25
fT V
CE=2.0V, IC=50mA, f=20MHz (2N5820, 21) 100 MHz
fT V
CE=2.0V, IC=50mA, f=20MHz (2N5822, 23) 120 MHz
Cob V
CB=10V, IC=0, f=1.0MHz 15 pF
Cib V
EB=0.5V, IE=0, f=1.0MHz 55 pF
R2 (17-November 2014)
www.centralsemi.com