Philips Semiconductors Product specification Voitage regulator diodes BZX79 series FEATURES Total power dissipation: max. 500 mW Four tolerance series: +1%, +2%, +3% and +5% Working voltage range: nom. 2.4 to 75 V (E24 range) Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS e Low voltage stabilizers or voltage references. DESCRIPTION Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 1% (BZX79-A), +2% (BZX79-B), +3% (BZX79-F) and +5% (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. | qe The diodes are type branded. Fig.1 Simplified outline (SOD27; DO-35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT lr continuous forward current - 250 |mA loom non-repetitive peak reverse current | tp = 100 :s; square wave; see Tables Tj = 25 C prior to surge 1,2,3and 4 Prot total power dissipation Tamb = 50 C; note 1 - 400 | mW Tamb = 50 C; note 2 - 500 | mw Pzsm non-repetitive peak reverse power tp = 100 ps; square wave; - 40 |W dissipation Tj = 25 C prior to surge; see Fig.3 Tstg storage temperature -65 +200 | C Tj junction temperature ~-65 +200 [C Notes 1. Device mounted on a printed circuit-board without metallization pad; lead length max. 2. Tie-point temperature < 50 C; max. lead length 8 mm. 1996 Apr 26Philips Semiconductors Product specification Voltage regulator diodes BZX79 series ELECTRICAL CHARACTERISTICS Total BZX79-A and B and F and C series Tj = 25 C; unless otherwise specified. SYMBOL PARAMETER _ CONDITIONS MAX. UNIT VE forward voltage ip = 10 mA; see Fig.4 0.9 v lm reverse current B2X79-A/B/F/C2V4 VasziVv 50 pA BZX79-A/B/F/C2V7 Va=lVv 20 pA BZX79-A/B/F/C3V0 Va=1V 10 pA BZX79-A/B/F/C3V3 VRa=ilVv 5 pA BZX79-A/B/F/C3V6 Va=itV 5 HA BZX79-A/B/F/C3V9 Va=lVv 3 pA BZX79-A/B/F/C4V3 Va=lVv 3 pA BZX79-A/B/F/C4V7 VR=2Vv 3 HA BZX79-A/B/F/C5V 1 Vaz2V 2 pA BZX79-A/B/F/C5V6 Vaz2V 1 pA BZX79-A/B/F/C6V2 Va=4V 3 pA BZX79-A/B/F/C6V8 VRa=4V 2 pA BZX79-A/B/F/C7V5 Va=5V 1 pA BZX79-A/B/F/C8V2 VRa=5V 700 nA BZX79-A/B/F/C9V1 VR=6V _ 500 nA BZX79-A/B/F/C10 VRa=7V 200 nA BZX79-A/B/F/C11 Va =8V 100. nA BZX79-A/B/F/C12 Va=8V 100 nA BZX79-A/B/F/C13 Va=8V 100 nA BZX79-A/B/F/C15 to 75 Va = 0.7Vznom 50 nA 1996 Apr 26 7-44Product specification BZX79 series get gs oze|voz| ver] oc | se | ose | 09 | ose |osez | vere |ozec v2 Prat 09 ooz|verlvor| ss | oz | ose | 09 |ovze footie |eeze |ariz zz $1 09 ost |vorlpn| ss | ar | sez | 09 | ovoz loge | ozoz | ove 02 $1 OL oo lye} per! os | or | see | os | over loozt | aver | zea Bh eat SZ ovt| veil vorl| op | or | oo2 | os | ocor |ozst lover | vest ry! 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(0) usr tox | Ga) wer TOL | ONO (y) "82, HW R= se] | yurg = 892) Je yu g = 1912] ye IN3SYXYND SSUSARY (4d) Po (4/AM) 2s (o) "Pa (A) 2A 6LXZ8 MWd SALULAdSY-NON | dv adO0Id | 44309 dW3L FONVLSISAY IVWLLNSYAsIC SJDVLIOA ONINHOM Voltage regulator diodes Philips Semiconductors payloads asmueujo ssajun '5. sz = GLO/4 0} L29/4-62XZd 8d} 184 BIGEL 7-48 1996 Apr 26Philips Semiconductors Product specification Voltage regulator diodes BZX79 series THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Reh j-tp thermal resistance from junction to tie-point | lead length 8 mm. 300 KAW Rin j-a thermal resistance from junction to ambient | lead length max.; see Fig.2 and note 1 380 K/W Note 1. Device mounted on a printed circuit-board without metallization pad. GRAPHICAL DATA 103 MBG930 Pihi-a (KW) 107 10 1 1077 1 10 102 103 104 ty (ms) 108 Fig.2 Thermal resistance from junction to ambient as a function of pulse duration. 1996 Apr 26Philips Semiconductors Product specification Voltage regulator diodes BZX79 series 1 a3 MBG8O1 M8G781 PZsM (W) 10? 1 1077 1 duration (ms) 10 (1) Tj = 25 C (prior to surge). (2) Tj = 150 C (prior to surge). Fig.3 Maximum permissible non-repetitive peak reverse power dissipation versus duration. 0.6 0.8 Ve () 1.0 T= 25C. Fig.4 Forward current as a function of forward voltage; typical values. Sz (vi) -1 -2 3 9 20 40 ty(ma) 60 BZX79-A/EVFIC2V4 to A/B/FICAV3. Tj = 26 to 150 C. Fig.5 Temperature coefficient as a function of working current; typical values. MBG782 10 (mV/K) 5 16 20 Iz (mA) BZX79-A/B/F/CAV7 to A/BIFIC12. T= 25 to 150 C. Fig.6 Temperature coefficient as a function of working current; typical values. 1996 Apr 26