BU208A - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

  

. . . designed for use in televisions.

•Collector–Emitter Voltages VCES 1500 Volts

•Fast Switching — 400 ns Typical Fall Time

•Low Thermal Resistance 1

C/W Increased Reliability

•Glass Passivated (Patented Photoglass). Triple Diffused Mesa Technology for

Long Term Stability

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎ

BU208A

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎÎÎÎÎ

700

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎÎÎ

VCES

ÎÎÎÎÎÎÎÎ

1500

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎ

5.0

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

— Peak

ÎÎÎÎÎÎÎ

ICM

ÎÎÎÎÎÎÎÎ

5.0

7.5

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current — Continuous

— Peak (Negative)

ÎÎÎÎÎÎÎ

IBM

ÎÎÎÎÎÎÎÎ

4.0

3.5

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 95

Derate above 95

ÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

12.5

0.625

ÎÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction Temperature Range

ÎÎÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎ

–65 to +115

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎÎÎ

1.6

ÎÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Maximum Lead Temperature for Soldering

Purpose, 1/8″ from Case for 5 Seconds

ÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

275

ÎÎÎÎ

NOTES:

1. Pulsed 5.0 ms, Duty Cycle

10%.

2. See page 3 for Additional Ratings on A Type.

3. Figures in ( ) are Standard Ratings Motorola Guarantees are Superior.



SEMICONDUCTOR TECHNICAL DATA Order this document

by BU208A/D

 Motorola, Inc. 1995



5.0 AMPERES

NPN SILICON

POWER TRANSISTOR

700 VOLTS

CASE 1–07

TO–204AA

(TO–3)

REV 7

BU208A

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎ

Min

ÎÎÎÎ

Typ

ÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage

(IC = 100 mAdc, L = 25 mH)

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎÎ

700

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current1ALL TYPES

(VCE = rated VCES, VBE = 0)

ÎÎÎÎÎ

ICES

ÎÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Base Voltage1

(IC = 0, IE = 10 mAdc)

(IC = 0, IE = 100 mAdc)

ÎÎÎÎÎ

VEBO

ÎÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS1

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 4.5 Adc, VCE = 5 Vdc)

ÎÎÎÎÎ

hFE

ÎÎÎÎÎ

2.25

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 4.5 Adc, IB = 2 Adc)

ÎÎÎÎÎ

VCE(sat)

ÎÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 4.5 Adc, IB = 2 Adc)

ÎÎÎÎÎ

VBE(sat)

ÎÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

1.5

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain Bandwidth Product

(IC = 0.1 Adc, VCE = 5 Vdc, ftest = 1 MHz)

ÎÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)

ÎÎÎÎÎ

Cob

ÎÎÎÎÎ

—

ÎÎÎÎ

125

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Storage Time (see test circuit fig. 1)

(IC = 4.5 Adc, IB1 = 1.8 Adc, LB = 10 µH)

ÎÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Fall time (see test circuit fig. 1)

(IC = 4.5 Adc, IB1 = 1.8 Adc, LB = 10 µH)

ÎÎÎÎÎ

—

ÎÎÎÎ

0.4

ÎÎÎÎ

—

ÎÎÎÎ

µs

1Pulse test: PW = 300 µs; Duty cycle

2%.

BU208A

Motorola Bipolar Power Transistor Device Data

Figure 1. Switching Time Test Circuit

+40

V+40

1 K 1 K

1N5242 (12 V)

10 K

14 2

10 nF

2K7

3K3

2 K

220 680 nF

820 10 nF

MPSU04

10 K

100

400 mA

100

Ω

LBT.U.T.

680

0.56

1 A

1500 V 22 nF

22 nF

6.5 mH Ly = 1.3 mH

0.5

F 250

7 mH 0.3 A

FUSE 130 V

POWER

SUPPLY

TBA920

040 80 120 160 200

Figure 2. Power Derating

TC, CASE TEMPERATURE (

POWER DISSIPATION (W)

BU208A

4 Motorola Bipolar Power Transistor Device Data

BASE DRIVE

The Key to Performance

By now, the concept of controlling the shape of the turn–off

base current is widely accepted and applied in horizontal

deflection design. The problem stems from the fact that good

saturation of the output device, prior to turn–off, must be as-

sured. This is accomplished by providing more than enough

IB1 to satisfy the lowest gain output device hFE at the end of

scan ICM. Worst–case component variations and maximum

high voltage loading must also be taken into account.

If the base of the output transistor is driven by a very low

impedance source, the turn–off base current will reverse

very quickly as shown in Fig. 3. This results in rapid, but only

partial collector turn–off, because excess carriers become

trapped in the high resistivity collector and the transistor is

still conductive. This is a high dissipation mode, since the

collector voltage is rising very rapidly. The problem is over-

come by adding inductance to the base circuit to slow the

base current reversal as shown in Fig. 4, thus allowing ac-

cess carrier recombination in the collector to occur while the

base current is still flowing.

Choosing the right LB Is usually done empirically since the

equivalent circuit is complex, and since there are several

important variables (ICM, IB1, and hFE at ICM). One method is

to plot fall time as a function of LB, at the desired conditions,

for several devices within the hFE specification. A more infor-

mative method is to plot power dissipation versus IB1 for a

range of values of LB.

This shows the parameter that really matters, dissipation,

whether caused by switching or by saturation. For very low

LB a very narrow optimum is obtained. This occurs when IB1

hFE

ICM, and therefore would be acceptable only for the

“typical” device with constant ICM. As LB is increased, the

curves become broader and flatter above the IB1. hFE = ICM

point as the turn off “tails” are brought under control. Eventu-

ally, if LB is raised too far , the dissipation all across the curve

will rise, due to poor initiation of switching rather than tailing.

Plotting this type of curve family for devices of different hFE,

essentially moves the curves to the left, or right according to

the relation IB1 hFE = constant. It then becomes obvious that,

for a specified ICM, an LB can be chosen which will give low

dissipation over a range of hFE and/or IB1. The only remain-

ing decision is to pick IB1 high enough to accommodate the

lowest hFE part specified. Neither LB nor IB1 are absolutely

critical. Due to the high gain of Motorola devices it is sug-

gested that in general a low value of IB1 be used to obtain

optimum efficiency — eg. for BU208A with ICM = 4.5 A use

IB1

[

1.5 A, at ICM = 4 A use IB1

[

1.2 A. These values are

lower than for most competition devices but practical tests

have showed comparable efficiency for Motorola devices

even at the higher level of IB1.

An LB of 10 µH to 12 µH should give satisfactory operation

of BU208A with ICM of 4 to 4.5 A and IB1 between 1.2 and

2 A.

TEST CIRCUIT WAVEFORMS

Figure 3 Figure 4

(TIME) (TIME)

TEST CIRCUIT OPTIMIZATION

The test circuit may be used to evaluate devices in the

conventional manner, i.e., to measure fall time, storage time,

and saturation voltage. However, this circuit was designed to

evaluate devices by a simple criterion, power supply input.

Excessive power input can be caused by a variety of prob-

lems, but it is the dissipation in the transistor that is of funda-

mental importance. Once the required transistor operating

current is determined, fixed circuit values may be selected.

BU208A

Motorola Bipolar Power Transistor Device Data

0.01

Figure 5. DC Current Gain

IC, COLLECTOR CURRENT (A)

40.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10

2.8

0.1

Figure 6. Collector–Emitter Saturation Voltage

IB, BASE CURRENT CONTINUOUS (A)

0.2 0.5 1.0 2.0 10

2.4

2.0

1.6

1.2

1.6

0.1

Figure 7. Base–Emitter Saturation Voltage

IC, COLLECTOR CURRENT (A)

0.2 0.5 1.0 2.0 10

1.5

1.4

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.1

Figure 8. Collector Saturation Region

IC, COLLECTOR CURRENT (A)

00.2 0.5 1.0 2.0 5.0 10

0.4

0.3

0.2

0.1

IC/IB = 3

Figure 9. Maximum Forward Bias Safe

Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (V)

hFE, DC CURRENT GAIN

VCE = 5 V

, COLLECTOR CURRENT (A)IC

0.001 2 5 10 20 50 100 200 500 1000 2000

1.3

VCE(sat), COLLECTOR–EMITTER SATURATION

VOLTAGE (V)

IC/IB = 2

VBE, BASE–EMITTER VOLTAGE (V)

5.0

IC/IB = 2

0.8

0.4

5.0

IC = 3.5 A

IC = 2 A IC = 3 A

IC = 4 A

IC = 4.5 A

0.5

0.2

0.1

0.05

0.02

0.01

0.005

0.002

≤

IC(max.)

ICM (max.)

2510

100

200

300

1 ms

2 ms

D.C.

BU208, A1

1Pulse width ≤ 20 µs. Duty cycle ≤ 0.25. RBE ≤ 100 Ohms.

VCE(sat), COLLECTOR–EMITTER SATURATION

VOLTAGE (V)

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

DUTY CYCLE

≤

BU208A

6 Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO–204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B––– 1.050 ––– 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N––– 0.830 ––– 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

–T–

SEATING

PLANE

2 PLD

0.13 (0.005) Y M

0.13 (0.005) T

–Q–

–Y–

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

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BU208A/D

*BU208A/D*

◊