Semiconductor Group 107/96
BUZ 338
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1 Pin 2 Pin 3
GDS
Type VDS IDRDS(on)Package Ordering Code
BUZ 338 500 V 13.5 A 0.4
Ω
TO-218 AA C67078-S3126-A2
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
TC = 28 °C
ID 13.5
A
Pulsed drain current
TC = 25 °C
IDpuls 54
Avalanche current,limited by Tjmax IAR 13.5
Avalanche energy,periodic limited by Tjmax EAR 18 mJ
Avalanche energy, single pulse
ID = 13.5 A, VDD = 50 V, RGS = 25
Ω
L = 9.18 mH, Tj = 25 °C
EAS
930
Gate source voltage VGS
±
20 V
Power dissipation
TC = 25 °C
Ptot 180
W
Operating temperature Tj -55 ... + 150 °C
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RthJC
≤
0.7 K/W
Thermal resistance, chip to ambient RthJA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
Semiconductor Group 207/96
BUZ 338
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
V(BR)DSS 500 - -
V
Gate threshold voltage
VGS=VDS, ID = 1 mA
VGS(th) 2.1 3 4
Zero gate voltage drain current
VDS = 500 V, VGS = 0 V, Tj = 25 °C
VDS = 500 V, VGS = 0 V, Tj = 125 °C
IDSS
-
-
10
0.1
100
1
µA
Gate-source leakage current
VGS = 20 V, VDS = 0 V
IGSS - 10 100
nA
Drain-Source on-resistance
VGS = 10 V, ID = 8.5 A
RDS(on) - 0.3 0.4
Ω
Semiconductor Group 307/96
BUZ 338
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
VDS
≥
2 * ID * RDS(on)max, ID = 8.5 A
gfs 8 15 -
S
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Ciss - 2500 3325
pF
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Coss - 320 480
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss - 120 180
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 2.9 A
RGS = 50
Ω
td(on)
- 40 60
ns
Rise time
VDD = 30 V, VGS = 10 V, ID = 2.9 A
RGS = 50
Ω
tr
- 100 150
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 2.9 A
RGS = 50
Ω
td(off)
- 450 600
Fall time
VDD = 30 V, VGS = 10 V, ID = 2.9 A
RGS = 50
Ω
tf
- 120 160
Semiconductor Group 407/96
BUZ 338
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
TC = 25 °C
IS- - 13.5
A
Inverse diode direct current,pulsed
TC = 25 °C
ISM - - 54
Inverse diode forward voltage
VGS = 0 V, IF = 27 A
VSD - 1.1 1.6
V
Reverse recovery time
VR = 100 V, IF=lS, diF/dt = 100 A/µs
trr - 400 -
ns
Reverse recovery charge
VR = 100 V, IF=lS, diF/dt = 100 A/µs
Qrr - 6.2 -
µC
507/96
Semiconductor Group
BUZ 338
Drain current
ID =
ƒ
(TC)
parameter: VGS
≥
10 V
0 20 40 60 80 100 120 °C 160
TC
0
1
2
3
4
5
6
7
8
9
10
11
12
A
14
ID
Power dissipation
Ptot =
ƒ
(TC)
0 20 40 60 80 100 120 °C 160
TC
0
20
40
60
80
100
120
140
160
W
190
Ptot
Safe operating area
ID =
ƒ
(VDS)
parameter: D = 0.01, TC = 25°C
-1
10
0
10
1
10
2
10
A
ID
10 0 10 1 10 2 10 3
V
VDS
R
DS(on) = V
DS / I
D
DC
10 ms
1 ms
100 µs
10 µs
tp = 6.8µs
Transient thermal impedance
Zth JC =
ƒ
(tp)
parameter: D = tp / T
-3
10
-2
10
-1
10
0
10
K/W
ZthJC
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
tp
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
Semiconductor Group 607/96
BUZ 338
Typ. output characteristics
ID =
ƒ(
VDS)
parameter: tp = 80 µs
0 4 8 12 16 20 V28
VDS
0
2
4
6
8
10
12
14
16
18
20
22
24
26
A
30
ID
VGS [V]
a
a4.0
b
b4.5
c
c5.0
d
d5.5
e
e6.0
f
f6.5
g
g7.0
h
h7.5
i
i8.0
j
j9.0
k
k10.0
l
Ptot = 180W
l20.0
Typ. drain-source on-resistance
RDS (on) =
ƒ(
ID)
parameter: VGS
0 4 8 12 16 20 A28
ID
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
Ω
1.3
RDS (on)
VGS [V] =
a
4.0
VGS [V] =
a
a
4.5
b
b
5.0
c
c
5.5
d
d
6.0
e
e
6.5
f
f
7.0
g
g
7.5
h
h
8.0
i
i
9.0
j
j
10.0
k
k
20.0
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS
≥
2 x ID x RDS(on)max
0 1 2 3 4 5 6 7 8 V10
VGS
0
1
2
3
4
5
6
7
8
9
10
11
12
13
A
15
ID
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS
≥
2 x ID x RDS(on)max
0 2 4 6 8 10 A14
ID
0
2
4
6
8
10
12
14
16
S
20
gfs
707/96
Semiconductor Group
BUZ 338
Gate threshold voltage
VGS (th) =
ƒ
(Tj)
parameter: VGS = VDS, ID = 1 mA
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
V
4.6
VGS(th)
-60 -20 20 60 100 °C 160
Tj
2%
typ
98%
Drain-source on-resistance
RDS (on) =
ƒ
(Tj)
parameter: ID = 8.5 A, VGS = 10 V
-60 -20 20 60 100 °C 160
Tj
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Ω
1.7
RDS (on)
typ
98%
Typ. capacitances
C = f (VDS)
parameter:VGS = 0V, f = 1MHz
0 5 10 15 20 25 30 V40
VDS
-2
10
-1
10
0
10
1
10
nF
C
Crss
Coss
Ciss
Forward characteristics of reverse diode
IF =
ƒ
(VSD)
parameter: Tj, tp = 80 µs
-1
10
0
10
1
10
2
10
A
IF
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V3.0
VSD
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
Semiconductor Group 807/96
BUZ 338
Avalanche energy EAS =
ƒ
(Tj)
parameter: ID = 13.5 A, VDD = 50 V
RGS = 25
Ω
, L = 9.18 mH
20 40 60 80 100 120 °C 160
Tj
0
100
200
300
400
500
600
700
800
mJ
1000
EAS
Typ. gate charge
VGS =
ƒ
(QGate)
parameter: ID puls = 20 A
0 20 40 60 80 100 120 140 160 nC 190
QGate
0
2
4
6
8
10
12
V
16
VGS
DS max
V
0,8
DS max
V
0,2
Drain-source breakdown voltage
V(BR)DSS =
ƒ
(Tj)
-60 -20 20 60 100 °C 160
Tj
450
460
470
480
490
500
510
520
530
540
550
560
570
580
V
600
V(BR)DSS
Semiconductor Group 907/96
BUZ 338
Package Outlines
TO-218 AA
Dimension in mm
