BC557BAP - MICRO COMMERCIAL COMPONENTS

Features

 150oC Junction Temperature

Mechanical Data

 Case: TO-92, Molded Plastic

 Polarity: indicated as below.

Maximum Ratings @ 25oC Unless Otherwise Specified

Charateristic Symbol Value Unit

Collector-Emitter Volta

g

e BC55

6

BC557

BC55

8

VCEO

-65

-45

-30

V

Collector-Base Volta

g

e BC55

6

BC557

BC55

8

VCBO

-80

-50

-30

V

Emitter-Base Voltage VEBO -5.0 V

Collector Current(DC) IC-100 mA

Power Dissipation@TA

=25oCPd

625

5.0

mW

mW/ oC

Power Dissipation@TC

=25oCPd

1.5

12

W

mW/ oC

Thermal Resistance, Junction to

Ambient Air

200 oC/W

Thermal Resistance, Junction to

Case 83.3 oC/W

Operating & Storage Temperature T

j

,T

STG -55~150 oC

BC556A/B/C

BC557A/B/C

BC558A/B/C

PNP Silicon

Amplifier Transistor

625mW

RJC

RJA

Revision: E 2014/12/15

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20736 Marilla Street Chatsworth

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 Through Hole Package

 Marking:Type Number

 Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

 Epoxy meets UL 94 V-0 flammability rating

 Moisure Sensitivity Level 1

INCHES MM

DIM MIN MAX MIN MAX NOTE

A .175 .185 4.45 4.70

B .175 .185 4.45 4.70

C .500 --- 12.70 ---

D .016 .020 0.41 0.63

E .135 .145 3.43 3.68

.095.1052.422.67 Straight Lead

AE

B

C

D

G

CBE

BENT LEADSTRAIGHT LEAD

BULK PACK AMMO PACK

* For ammo packing detailed specification, click here to visit our website

of product packaging for details.

.173.2204.405.60 Bent Lead

G

TO-92

DIMENSIONS

Halogen free available upon request by adding suffix "-HF"

•

MCC

Revision: E 2014/12/15

TM

Micro Commercial Components

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ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit

BC556 -80

BC557 -50

Collector-base

breakdown voltage BC558

V(BR)CBO I

C= -0.1mA,IE=0

-30

V

BC556 -65

BC557 -45

Collector-emitter

breakdown voltage BC558

V(BR)CEO IC=-2mA,IB=0

-30

V

Emitter-base breakdow n voltage V(BR)EBO I

E=-100μA,IC=0 -5 V

BC556 VCB=-70V,IE=0 -0.1 μA

BC557 VCB=-45V,IE=0 -0.1 μA

Collector cut-off current

BC558

ICBO

VCB=-25V,IE=0 -0.1 μA

BC556 VCE=-60V,IB=0 -0.1 μA

BC557 VCE=-40V,IB=0 -0.1 μA

Collector cut-off current

BC558

ICEO

VCE=-25V,IB=0 -0.1 μA

Emitter cut-off current IEBO V

EB=-5V,IC=0 -0.1 μA

DC current gain hFE * V

CE=-5V, IC=-2mA 120 800

IC=-10mA,IB=-0.5mA -0.3 V

Collector-emitter saturation voltage VCE(sat) IC=-100mA,IB=-5mA -0.65 V

IC=-10mA,IB=-0.5mA -0.8 V

Base-emitter saturation voltage VBE(sat) IC=-100mA,IB=-5mA -1 V

VCE=-5V, IC=-2mA -0.55 -0.7 V

Base-emitter voltage VBE VCE=-5V, IC=-10mA -0.82 V

Collector output capacitance Cob V

CB=-10V,IE=0, f=1MHz 6 pF

BC556 150 MHz

BC557 3150 MHz

Transition frequency

BC558

fT VCE=-5V,IC=-10mA, f=100MHz

150 MHz

CLASSIFICATION of hFE

RANK A B C

RANGE 120-220 180-460 420-800

BC557/BC558

Figure 1. Normalized DC Current Gain

IC, COLLECTOR CURRENT (mAdc)

2.0

Figure 2. “Saturation” and “On” Voltages

IC, COLLECTOR CURRENT (mAdc)

–0.2

0.2

Figure 3. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 4. Base–Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

–0.6

–0.7

–0.8

–0.9

–1.0

–0.5

0

–0.2

–0.4

–0.1

–0.3

1.6

1.2

2.0

2.8

2.4

–1.2

–1.6

–2.0

–0.02 –1.0 –10

0–20

–0.1

–0.4

–0.8

hFE, NORMALIZED DC CURRENT GAIN

V, VOLTAGE (VOL TS)

VCE, COLLECTOR–EMITTER VOL TAGE (V)

VB, TEMPERATURE COEFFICIENT (mV/ C)

°θ

1.5

1.0

0.7

0.5

0.3

–0.2 –10 –100

–1.0

TA = 25

°

CVBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = –10 V

VCE = –10 V

TA = 25

°

C

–55

°

C to +125

°

C

IC = –100 mA

IC = –20 mA

–0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100

IC = –200 mAIC = –50 mAIC =

–10 mA

Figure 5. Capacitances

VR, REVERSE VOLTAGE (VOLTS)

10

Figure 6. Current–Gain – Bandwidth Product

IC, COLLECTOR CURRENT (mAdc)

–0.4

1.0

80

100

200

300

400

60

20

40

30

7.0

5.0

3.0

2.0

–0.5

C, CAPACITANCE (pF)

f , CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)

T

TA = 25

°

C

Cob

Cib

–0.6 –1.0 –2.0 –4.0 –6.0 –10 –20 –30 –40

150

–1.0 –2.0 –3.0 –5.0 –10 –20 –30 –50

VCE = –10 V

TA = 25

°

C

TA = 25

°

C

1.0

MCC

BC556A thru BC558C

Revision: E 2014/12/15

TM

Micro Commercial Components

www.mccsemi.com

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BC556

Figure 7. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

Figure 8. “On” Voltage

IC, COLLECTOR CURRENT (mA)

–0.8

–1.0

–0.6

–0.2

–0.4

1.0

2.0

–0.1 –1.0 –10 –200

–0.2

0.2

0.5

–0.2 –1.0 –10 –200

TJ = 25

°

C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = –5.0 V

Figure 9. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 10. Base–Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

–1.0

–1.2

–1.6

–2.0

–0.02 –1.0 –10

0–20

–0.1

–0.4

–0.8

VCE, COLLECTOR–EMITTER VOL TAGE (VOL TS)

VB, TEMPERA TURE COEFFICIENT (mV/ C)

°θ

–0.2 –2.0 –10 –200

–1.0

TJ = 25

°

C

IC =

–10 mA

hFE, DC CURRENT GAIN (NORMALIZED)

V, VOLTAGE (VOL TS)

VCE = –5.0 V

TA = 25

°

C

0–0.5 –2.0 –5.0 –20 –50 –100

–0.05 –0.2 –0.5 –2.0 –5.0

–100 mA

–20 mA

–1.4

–1.8

–2.2

–2.6

–3.0 –0.5 –5.0 –20 –50 –100

–55

°

C to 125

°

C

θ

VB for VBE

–2.0 –5.0 –20 –50 –100

Figure 11. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

40

Figure 12. Current–Gain – Bandwidth Product

IC, COLLECTOR CURRENT (mA)

–0.1 –0.2 –1.0 –50

2.0 –2.0 –10 –100

100

200

500

50

20

10

6.0

4.0

–1.0 –10 –100

VCE = –5.0 V

C, CAPACITANCE (pF)

f , CURRENT–GAIN – BANDWIDTH PRODUCT

T

–0.5 –5.0 –20

TJ = 25

°

C

Cob

Cib

8.0

–50 mA –200 mA

MCC

BC556A thru BC558C

Revision: E 2014/12/15

TM

Micro Commercial Components

www.mccsemi.com

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MCC

Revision: E 2014/12/15

TM

Micro Commercial Components

www.mccsemi.com

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3

Part Number-BP Bulk: 100Kpcs/Carton

Ordering Information :

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make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components

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Device Packing

Part Number-AP Ammo Packing: 20Kpcs/Carton

Note : Adding "-HF" suffix for halogen free, eg. Part Number-AP-HF