APT5015BVR 500V 32A 0.150 POWER MOS V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. * Faster Switching * 100% Avalanche Tested * Lower Leakage * Popular TO-247 Package TO-247 D G S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25C unless otherwise specified. Parameter Drain-Source Voltage APT5015BVR UNIT 500 Volts 32 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 370 Watts Linear Derating Factor 2.96 W/C VGSM PD TJ,TSTG 128 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 32 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 30 4 mJ 1300 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 500 Volts 32 Amps On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 TYP (VGS = 10V, 0.5 ID[Cont.]) MAX 0.150 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Ohms A 250 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) UNIT 100 nA 4 Volts 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA APT Website - http://www.advancedpower.com 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord 050-5561 Rev C Symbol DYNAMIC CHARACTERISTICS Symbol APT5015BVR Characteristic Test Conditions MIN TYP MAX Ciss Input Capacitance VGS = 0V 4400 5280 Coss Output Capacitance VDS = 25V 600 840 Reverse Transfer Capacitance f = 1 MHz 230 350 Crss Qg Total Gate Charge Qgs 3 VGS = 10V 200 300 VDD = 0.5 VDSS 30 45 ID = ID[Cont.] @ 25C 80 120 Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time tr VGS = 15V 12 25 VDD = 0.5 VDSS 14 30 ID = ID[Cont.] @ 25C 55 80 RG = 1.6 11 20 TYP MAX Rise Time td(off) Turn-off Delay Time tf Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD Characteristic / Test Conditions MIN 32 Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) 128 Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.]) 1.3 UNIT Amps Volts t rr Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) 510 ns Q rr Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/s) 10.2 C THERMAL CHARACTERISTICS Symbol Characteristic MIN RJC Junction to Case RJA Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% TYP MAX 0.34 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 2.54mH, R = 25, Peak I = 32A j G L APT Reserves the right to change, without notice, the specifications and information contained herein. D=0.5 0.1 0.2 0.05 0.1 0.05 0.01 Note: 0.02 PDM Z JC, THERMAL IMPEDANCE (C/W) 050-5561 Rev C 0.4 0.01 0.005 t2 SINGLE PULSE 0.001 10-5 t1 10-4 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION UNIT C/W APT5015BVR 60 VGS=6V, 7V, 8V, 10V & 15V ID, DRAIN CURRENT (AMPERES) 50 5.5V 40 30 5V 20 4.5V 10 4V 0 50 VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE TJ = +125C 40 30 20 TJ = +125C 10 TJ = +25C TJ = -55C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 35 30 25 20 15 10 5 0 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 25 5.5V 40 30 5V 20 4.5V 10 4V 1.5 V GS NORMALIZED TO = 10V @ 0.5 I [Cont.] D 1.4 1.3 1.2 VGS=10V VGS=20V 1.1 1.0 0.9 0 20 40 60 80 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE -50 1.2 2.5 I = 0.5 I [Cont.] D D V GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) VGS=7V, 8V & 10V 6V 0 2 4 6 8 10 12 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) TJ = -55C 50 0 0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 60 VGS=15V 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-5561 Rev C ID, DRAIN CURRENT (AMPERES) 60 APT5015BVR 20,000 10S 100 OPERATION HERE LIMITED BY RDS (ON) 50 10,000 100S C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 200 1mS 10 5 10mS 100mS DC 1 TC =+25C TJ =+150C SINGLE PULSE .5 .1 IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) I = I [Cont.] D VDS=100V VDS=250V 12 VDS=400V 8 4 0 Crss 500 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 20 16 Coss 1,000 100 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA D Ciss 5,000 0 50 100 150 200 250 300 350 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 300 100 TJ =+150C 50 TJ =+25C 10 5 1 0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE TO-247 Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Drain 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Gate Drain Source 050-5561 Rev C 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058