ALLEGRO MICROSYSTEMS INC GbE D ml 0504338 0006517 238 MMALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T, = + 25C I lego leo Device Allegro Max. | Viecso | Vierceo | Viemeco | Max. @V.,| Max. @V,, Type Type Polarity | (mA) (Vv) (Vv) (Vv) (nA) ()_ | (nA) (Y) D40D11 THC40D11 NPN 1.0A 90 75 5.0 _ _ _ D41D11 THC41D11 PNP 1.0A - 908) -75 - 5.0 _ _ _ _ D44H10 THD44H10 NPN 10A 316 80 14 _ _ _ _ D45H10 THD45H10 PNP 10A -164 -80 -7.0 _ _ _ _ MJE15028 | THMJE15028 NPN 8.0A 316 120 a _ _ _ _ MJE15029 | THMJE15029 PNP 8.0A -164 -120 -7.0 _ _ MPSA06 | THMPSA06 NPN 800 80 80 4.0 100 80 _ _ MPSA13 | THMPSA13 NPN 500 30!) _ 10 100 30 _ _ MPSA42 | THMPSA42 NPN 500 300 300 6.0 100 8200 100 = 6.0 MPSA55 | THMPSA55 PNP 800 -60 -60 -4.0 100 60 _ _ MPSA65_ | THMPSA65 PNP 300 - 30 - 30 - 8.0 _ _ _ _ MPSA92 | THMPSA92 PNP 500 - 300 - 300 - 5.0 250 200 100 = 3.0 MPSA93_ | THMPSA93 PNP 500 -200 -200 -5.0 250 160 _ MPSU95 | THMPSU95 PNP 1.0A - 50 - 40 - 10 100 30 100 8.0 *Alternative geometries for many devices (as shown in parentheses) are available on special order. NOTES: 1. Maximum at typical JEDEC conditions. 4. Typical Value. 2. Measured in both forward and reverse modes. 5. logy at Vog = 30 V, V,, = 3.0 V. 3. Offset voltage, V_, at I, = 0. 6. Visrices OF Ioes a8 applicable. ALLEGRO MICROSYSTEMS INC BBE D MM 0504338 0006518 174 MALGR DC Current Gain Voeteay f, hy. h., @l, @V.. Max. @|, @I. Min. @ I, c, Min. Max. (mA) (Vv) (V) (mA) (mA) (MHz) (mA) (pF) Geometry* 120 360 100 2.0 1.0 500 50 200) 20 8.0 DI 120 360 100 2.0 1.0 500 50 150 20 10 DJ 20 _ 4A0A 1.0 1.0 8.0A 800 _ _ _ KM 20 _ 4.0A 1.0 1.0 8.0A 800 _ _ KN 40 _ 3.0A 2.0 0.5 1.0A 100 _ _ _ KM 40 _ 3.0A 2.0 0.5 1.0A 100 KN 50 _ 100 1.0 0.25 100 _ 100 10 _ DA 10k 100 5.0 1.5 100 _ 125 10 _ TP 40 _ 30 10 0.5 20 2.0 50 10 3.0 BL 50 100 1.0 0.25 100 50 100 _ BF 50k _ 10 5.0 1.5 100 10 100 10 2.5 KA 25 _ 30 10 1.0 20 2.0 50 10 6.0 BM 25 30 10 0.5 20 50 10 8.0 BM 25k 150k 200 5.0 1.5 1000 2.0 50 200 12 BO eg) cc O | o ) = a4 jas - ox a _ oO a oO