1N1183, 1N3765, 1N1183A, 1N2128A Series
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Revision: 04-Dec-12 1Document Number: 93492
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Power Silicon Rectifier Diodes,
35 A, 40 A, 60 A
DESCRIPTION/FEATURES
• Low leakage current series
• Good surge current capability up to 1000 A
• Can be supplied to meet stringent military,
aerospace, and other high reliability
requirements
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
(1) JEDEC registered values
ELECTRICAL SPECIFICATIONS
Notes
(1) JEDEC registered values
(2) For 1N1183 Series and 1N3765 Series TC = - 65 °C to 190 °C
• Basic type number indicates cathode to case. For anode to case, add “R” to part number, e.g., 1N1188R, 1N3766R, 1N1186RA, 1N2135RA
PRODUCT SUMMARY
IF(AV) 35 A, 40 A, 60 A
DO-203AB (DO-5)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS 1N1183 1N3765 1N1183A 1N2128A UNITS
IF(AV)
35 (1) 35 (1) 40 (1) 60 (1) A
TC140 (1) 140 (1) 150 (1) 140 (1) °C
IFSM
50 Hz 480 380 765 860 A
60 Hz 500 (1) 400 (1) 800 (1) 900 (1)
I2t50 Hz 1140 730 2900 3700 A2s
60 Hz 1040 670 2650 3400
I2t 16 100 10 300 41 000 52 500 A2s
VRRM Range 50 to 600 (1) 700 to 1000 (1) 50 to 600 (1) 50 to 600 (1) V
VOLTAGE RATINGS
TYPE NUMBER
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
(TJ = - 65 °C TO 200 °C (2))
V
VRM, MAXIMUM DIRECT
REVERSE VOLTAGE
(TJ = - 65 °C TO 200 °C (2))
V
1N1183 1N1183A 1N2128A 50 (1) 50 (1)
1N1184 1N1184A 1N2129A 100 (1) 100 (1)
1N1185 1N1185A 1N2130A 150 (1) 150 (1)
1N1186 1N1186A 1N2131A 200 (1) 200 (1)
1N1187 1N1187A 1N2133A 300 (1) 300 (1)
1N1188 1N1188A 1N2135A 400 (1) 400 (1)
1N1189 1N1189A 1N2137A 500 (1) 500 (1)
1N1190 1N1190A 1N2138A 600 (1) 600 (1)
1N3765 700 (1) 700 (1)
1N3766 800 (1) 800 (1)
1N3767 900 (1) 900 (1)
1N3768 1000 (1) 1000 (1)
1N1183, 1N3765, 1N1183A, 1N2128A Series
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Revision: 04-Dec-12 2Document Number: 93492
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Notes
(1) JEDEC registered values
(2) I2t for time tx = I2t x tx
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS 1N1183 1N3765 1N1183A 1N2128A UNITS
Maximum average forward current
at case temperature IF(AV) 1-phase operation,
180° sinusoidal conduction
35 (1) 35 (1) 40 (1) 60 (1) A
140 (1) 140 (1) 150 (1) 140 (1) °C
Maximum peak one cycle
non-repetitive surge current IFSM
Half cycle 50 Hz
sine wave or 6 ms
rectangular pulse
Following any
rated load
condition and
with rated
VRRM applied
480 380 765 860
A
Half cycle 60 Hz
sine wave or 5 ms
rectangular pulse
500 (1) 400 (1) 800 (1) 900 (1)
Half cycle 50 Hz
sine wave or 6 ms
rectangular pulse
Following any
rated load
condition and
with ½ VRRM
applied following
surge = 0
570 455 910 1000
Half cycle 60 Hz
sine wave or 5 ms
rectangular pulse
595 475 950 1050
Maximum I2t for fusing
I2t
t = 10 ms With rated VRRM
applied following
surge, initial
TJ = TJ maximum
1140 730 2900 3700
A2s
t = 8.3 ms 1040 670 2650 3400
Maximum I2t for individual
device fusing
t = 10 ms With VRRM = 0
following surge,
initial
TJ = TJ maximum
1610 1030 4150 5250
t = 8.3 ms 1470 940 3750 4750
Maximum I2t for individual
device fusing I2t (2) t = 0.1 to 10 ms,
VRRM = 0 following surge 16 100 10 300 41 500 52 500 A2s
Maximum peak forward voltage
at maximum forward current (IFM)VFM TJ = 25 °C
1.7 (1) 1.8 (1) 1.3 (1) 1.3 (1) V
110 110 126 188 A
Maximum average
reverse current
VRRM = 700
IR(AV)
Maximum rated IF(AV) and TC
-5.0
(1) --
mA
VRRM = 800 - 4.0 (1) --
VRRM = 900 - 3.0 (1) --
VRRM = 1000 - 2.0 (1) --
Maximum rated IF(AV), VRRM and TC10 (1) -2.5
(1) 10 (1)
1N1183, 1N3765, 1N1183A, 1N2128A Series
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Revision: 04-Dec-12 3Document Number: 93492
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Notes
(1) JEDEC registered values
(2) Recommended for pass-through holes
(3) Recommended for holed threaded heatsinks
Fig. 1 - Maximum Allowable Case Temperature vs.
Average Forward Current, 1N1183 and 1N3765 Series
Fig. 2 - Typical Low Level Forward Power Loss vs.
Average Forward Current (Sinusoidal Current Waveform),
1N1183 and 1N3765 Series
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS 1N1183 1N3765 1N1183A 1N2128A UNITS
Maximum operating
case temperature range TC- 65 to 190 (1) - 65 to 200
°C
Maximum storage
temperature range TStg - 65 to 175 (1) - 65 to 200
Maximum internal thermal
resistance, junction to case RthJC DC operation 1.00 (1) 1.1 (1) 0.65 (1)
°C/W
Thermal resistance,
case to sink RthCS Mounting surface, smooth, flat and greased 0.25
Maximum allowable
mounting torque
(+ 0 %, - 10 %)
Not lubricated thread, tighting on nut (2) 3.4 (30)
N · m
(lbf · in)
Lubricated thread, tighting on nut (2) 2.3 (20)
Not lubricated thread, tighting on hexagon (3) 4.2 (37)
Lubricated thread, tighting on hexagon (3) 3.2 (28)
Approximate weight 17 g
0.6 oz.
Case style JEDEC DO-203AB (DO-5)
1N1183, 1N3765, 1N1183A, 1N2128A Series
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Revision: 04-Dec-12 4Document Number: 93492
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Fig. 3 - Typical High Level Forward Power Loss vs.
Average Forward Current (Sinusoidal Current Waveform),
1N1183 and 1N3765 Series
Fig. 4 - Typical Forward Voltage vs. Forward Current,
1N1183 and 1N3765 Series
Fig. 5 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses, 1N1183 and 1N3765 Series
Fig. 6 - Average Forward Current vs. Maximum Allowable Case
Temperature, 1N1183A Series
Fig. 7 - Maximum Low Level Forward Power Loss vs.
Average Forward Current, 1N1183A Series
Fig. 8 - Maximum High Level Forward Power Loss vs.
Average Forward Current, 1N1183A Series
1N1183, 1N3765, 1N1183A, 1N2128A Series
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Revision: 04-Dec-12 5Document Number: 93492
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Fig. 9 - Maximum Forward Voltage vs. Forward Current,
1N1183A Series
Fig. 10 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses, 1N1183A Series
Fig. 11 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses, 1N2128A Series
Fig. 12 - Maximum Allowable Case Temperature vs.
Average Forward Current, 1N2128A Series
Fig. 13 - Maximum Low Level Forward Power Loss vs.
Average Forward Current, 1N2128A Series
Fig. 14 - Maximum High Level Forward Power Loss vs.
Average Forward Current, 1N2128A Series
1N1183, 1N3765, 1N1183A, 1N2128A Series
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Revision: 04-Dec-12 6Document Number: 93492
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Fig. 15 - Maximum Forward Voltage vs. Forward Current,
1N2128A Series
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95360
Document Number: 95360 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 29-Sep-08 1
DO-203AB (DO-5) for
1N1183, 1N3765, 1N1183A, 1N2128A, 1N3208 Series
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
1/4" 28UNF-2A
for metric devices: M6 x 1
Ø 14.6 (0.57)
4 (0.16) MIN.
Ø 4.10 (0.16)
Ø 3.80 (0.15)
25.4 (1.0) MAX.
1.0 (0.04)
MAX.
17.40 (0.68) MIN.
Across flats
6.1 (0.24)
7.0 (0.28)
10.7 (0.42)
11.5 (0.45)
10.8 (0.43)
11.4 (0.45)
1.03 (0.04)
MAX.
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Revision: 02-Oct-12 1Document Number: 91000
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