A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
S
p
ecifi cations are sub
j
ect to chan
g
e without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
BVCEO IC = 200 mA 40 V
BVCEX IC = 200 mA VBE = -1.5 V 65 V
BVCBO IC = 500 µA65
V
ICEO VCE = 30 V 250 µ
µµ
µA
IEBO VEB = 4.0 V 250 µ
µµ
µA
hFE VCE = 5.0 V IC = 1.0 A 5.0 ---
Cob VCB = 30 V f = 1.0 MHz 20 pF
ftVCE = 28 V IC = 150 mA f = 100 MHz 400 MHz
Pout
GP
η
ηη
ηC
VCE = 28 V f = 175 MHz 13.5
5.8
70
W
dB
%
NPN SILICON RF POWER TRANSISTOR
2N3632
PACKAGE STYLE TO- 60
1 = EMITTER 2 = BASE
3 = COLLECTOR CASE = EMITTER
DESCRIPTION:
The ASI 2N3632 is Designed f or
Class A,B,C Am plifier, Oscillator and
Driver Applications Covering 130 to
400 MHz.
FEATURES INCLUDE:
• Emitter Ballasted
• Common Emitter Packag e
MAXIMUM RATINGS
IC3.0 A
VCE 40 V
PDISS 23 W @ TC = 25 OC
TJ-65 OC to +200 OC
TSTG -65 OC to +200 OC
θ
θθ
θJC 7.6 OC/W
