Philips Semiconductors Product specification Schottky barrier (double) diodes BAS40 series FEATURES PINNING e Low forward voltage BAS40 e Guard ring protected PIN 04 -05 06 3 e Small SMD package 1 ay ay a kj e Low diode capacitance. 2 ne Kp a> ko 1 Fs 2 3 | ky | Ky, @e | kr, ke | a1, ae Micas6 APPLICATIONS Ultra high-speed switching e Voltage clamping e Protection circuits Blocking diodes. DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 smail plastic SMD package. Single diodes and double diodes with different pinning are available. Top view MGC421 Fig.1 Simplified outline Fig.3 BAS40-04 diode configuration (symbol). MLC359 MARKING MARKING TYPE NUMBER CODE BAS40 43p BAS40-04 44p BAS40-05 45p BAS40-06 46p 1996 Mar 19 Fig.2 BAS40 single diode configuration (symbol). (SOT23) and pin Fig.4 BAS40-05 diode configuration. configuration (symbol). 3 3 1 FP nc. ' e: 2 MLOBST MLC360 Fig.6 BAS40-06 diode configuration (symbol). Philips: Semiconductors Product specification Schottky barrier (double) diodes BAS40 series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS | win. | MAX. | UNIT Per diode Va continuous reverse voltage - 40 Vv Ie continuous forward current - 120 mA lenm repetitive peak forward current t<sts;, 8<05 ~ 120 mA lesm non-repetitive peak forward current tp< 10 ms - 200 mA T stg storage temperature -65 +150 [C Tj junction temperature - 150 C Tamb operating ambient temperature -65 4150 =1C ELECTRICAL CHARACTERISTICS Tamp = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode Ve continuous forward voltage see Fig.6 Ip =1mA 380 mV le=10mA 500 mV le=15mA 1 Vv Ip continuous reverse current Vr = 30 V; note 1; see Fig.7 1 HA Vr = 40 V; note 1; see Fig.7 10 HA Tt charge carrier life time lp = 5 mA; Krakauer method 100 ps Cy diode capacitance Va =0V;f=1MHz; see Fig9 |5 pF Note 1. Pulsed test: tp = 300 us; 6 = 0.02. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rh j-a thermal resistance from junction to ambient | note 1 500 KW Note 1. Refer to SOT23 standard mounting conditions. 1996 Mar 19 2-18 Philips Semiconductors Product specification Schottky barrier (double) diodes -BAS40 series GRAPHICAL DATA 102 103 MLC362 \ a F (uA) (ma) 102 10 10 1 (1) FH (3) | f (4) -4 ste) 101 10? 5 2 0.4 0 0.8 1.0 1% 10 2 30 0. x 6 I. ve) z 0 0 Vay) (1) Tamp = 150 C. (2) Tamp = 85 C. (3) Tam = 25C. (4) Tamp = -40 C. Fig.6 Forward current as a function of forward voltage; typical values. (1) Tam = 150C. (2) Tamp = 85 C. (3) Tamp = 25C. Fig.7 Reverse current as a function of reverse voltage; typical values. MLC364 103 "iff {Q) 10? 10 1~ 2 10 1 10 je (may 10 f=10 KHz. Fig.8 Differential forward resistance as a function of forward current; typical values. MLCO363 fq (pF) 0 10 20 y rn) 30 f= 1 MHZ; Tamp = 25 C. Fig.9 Diode capacitance as a function of reverse voltage; typical values. 1996 Mar 19