SEMIPACK®3
Thyristor / Diode Modules
SKKT 253
SKKH 253
Features
   
   

    
 
   
!" #$  % & ' (
Typical Applications
)  
+% %   ,
  
 
+% %  -$ 
,
.  
+$ ,
1) /   
2)      
SKKT SKKH
01/2 0112$ 0)12 312/ 4 56 + -   ,
0 0 30 4 ( +% 7869 4 8( :,
;66 866 /<< (=68& /<< (=68&
766 766 /<< (=7& /<< (=7&
7(66 7566 /<< (=75& /<< (=75&
7>66 7'66 /<< (=7'& /<< (=7'&
7;66 7866 /<< (=78& /<< (=78&
Symbol Conditions Values Units
30 % 7869 4 8( +766, :9 ( +7;7 ,
3).7'=66?9 4 ( :9 @ = @' 8> = (6
312/ .7'=66?9 4 ( :9 A7 = A 5'( = B 566
3/2 -C 4 ( :9 76  ;666
-C 4 76 :9 76  8666
D -C 4 ( :9 8$ %%% 76  56(666 D
-C 4 76 :9 8$ %%% 76  6666 D
0-C 4 ( :9 34 >(6 % 7$' 0
0+, -C 4 76 : % 6$8( 0
-C 4 76 : % 7$7 E
3))9 31) -C 4 76 :9 01) 4 01129 0)) 4 0)12 % (6 
 -C 4 ( :9 3F4 7 9 F= 4 7 =G 7 G
 0)4 6$'> B 0)12 G
+=, -C 4 76 : % (6 =G
+-=, -C 4 76 : % 7666 0=G
H-C 4 76 : (6 %%% 7(6 G
3-C 4 ( :9 % = % 7(6 = (66 
3"-C 4 ( :9 1F4  E9 % = % 66 = 666 
0F -C 4 ( :9 %% % 0
3F -C 4 ( :9 %% % 66 
0F) -C 4 76 :9 %% % 6$( 0
3F) -C 4 76 :9 %% % 76 
1+CI, %9   =   6$77 = 6$6(( <=A
1+CI, % 7869   =   6$77( = 6$6(> <=A
1+CI, % 769   =   6$7( = 6$6'( <=A
1+I,   =   6$68 = 6$65 <=A
-C I 56 %%% J 76 :
 I 56 %%% J 76 :
0 % % (6 #9 %%%9 7 = 7 % '66 = 666 0K
2 L ( M 7( N7, O
2  ; M 7( N, O
( B ;$87 =D
% 566
 /<< 5
/<< ('
SKKT 253, SKKH 253 THYRISTOR BRIDGE,SCR,BRIDGE
1 05-07-2006 NOS © by SEMIKRON
Fig. 1L Power dissipation per thyristor vs. on-state current Fig. 1R Power dissipation per thyristor vs. ambient temp.
Fig. 2L Power dissipation per module vs. rms current Fig. 2R Power dissipation per module vs. case temp.
Fig. 3L Power dissipation of two modules vs. direct current Fig. 3R Power dissipation of two modules vs. case temp.
RECTIFIER,DIODE,THYRISTOR,MODULE
2 05-07-2006 NOS © by SEMIKRON
Fig. 4L Power dissipation of three modules vs. direct and rms current Fig. 4R Power dissipation of three modules vs. case temp.
Fig. 5 Recovered charge vs. current decrease Fig. 6 Transient thermal impedance vs. time
Fig. 7 On-state characteristics Fig. 8 Surge overload current vs. time
SKKT 253, SKKH 253 THYRISTOR BRIDGE,SCR,BRIDGE
3 05-07-2006 NOS © by SEMIKRON
Fig. 9 Gate trigger characteristics
Dimensions in mm
 5 +/<<,
 (' /<<
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
RECTIFIER,DIODE,THYRISTOR,MODULE
4 05-07-2006 NOS © by SEMIKRON