SKKT 253, SKKH 253 THYRISTOR BRIDGE,SCR,BRIDGE (R) SEMIPACK 3 Thyristor / Diode Modules 01/2 0112$ 0)12 0 ;66 766 7(66 7>66 0 866 766 7566 7'66 30 4 ( + % 7869 4 8( :, /<< (=68& /<< (=68& /<< (=7& /<< (=7& /<< (=75& /<< (=75& /<< (=7'& /<< (=7'& 7;66 7866 /<< (=78& SKKH 253 Features !" #$ % & ' ( Typical Applications ) +% % , +% % - $ , . +$ , /<< (=78& Symbol Conditions Values Units 30 3) % 7869 4 8( +766, :9 .7'=66?9 4 ( :9 @ = @' ( +7;7 , 8> = (6 312/ .7'=66?9 4 ( :9 A7 = A 5'( = B 566 3/2 -C 4 ( :9 76 -C 4 76 :9 76 -C 4 ( :9 8$ %%% 76 ;666 8666 56(666 D -C 4 76 :9 8$ %%% 76 6666 D % 7$' % 6$8( % 7$7 0 0 E % (6 G D SKKT 253 312/ 4 56 + - , 0 0+, -C 4 ( :9 3 4 >(6 -C 4 76 : -C 4 76 : 3))9 31) -C 4 76 :9 01) 4 01129 0)) 4 0)12 -C 4 ( :9 3F 4 7 9 F= 4 7 =G 7 0) 4 6$'> B 0)12 G +=, +-=, H 3 -C 4 76 : -C 4 76 : -C 4 76 : -C 4 ( :9 % = % % (6 % 7666 (6 %%% 7(6 7(6 = (66 =G 0=G G 3" -C 4 ( :9 1F 4 E9 % = % 66 = 666 0F 3F 0F) -C 4 ( :9 %% -C 4 ( :9 %% -C 4 76 :9 %% % % 66 % 6$( 0 0 3F) -C 4 76 :9 %% 1 +CI, 1 +CI, 1 +CI, 1 +I, -C %9 = % 7869 = % 769 = = 0 2 2 % % (6 #9 %%%9 7 = 7 % L % 76 6$77 = 6$6(( 6$77( = 6$6(> 6$7( = 6$6'( 6$68 = 6$65 I 56 %%% J 76 <=A <=A <=A <=A : I 56 %%% J 76 : '66 = 666 ( M 7( N7, ; M 7( N, ( B ;$87 0K O O =D 1) / % 566 2) /<< /<< 5 (' SKKT 1 SKKH 05-07-2006 NOS (c) by SEMIKRON RECTIFIER,DIODE,THYRISTOR,MODULE Fig. 1L Power dissipation per thyristor vs. on-state current Fig. 1R Power dissipation per thyristor vs. ambient temp. Fig. 2L Power dissipation per module vs. rms current Fig. 2R Power dissipation per module vs. case temp. Fig. 3L Power dissipation of two modules vs. direct current Fig. 3R Power dissipation of two modules vs. case temp. 2 05-07-2006 NOS (c) by SEMIKRON SKKT 253, SKKH 253 THYRISTOR BRIDGE,SCR,BRIDGE Fig. 4L Power dissipation of three modules vs. direct and rms current Fig. 4R Power dissipation of three modules vs. case temp. Fig. 5 Recovered charge vs. current decrease Fig. 6 Transient thermal impedance vs. time Fig. 7 On-state characteristics Fig. 8 Surge overload current vs. time 3 05-07-2006 NOS (c) by SEMIKRON RECTIFIER,DIODE,THYRISTOR,MODULE Fig. 9 Gate trigger characteristics Dimensions in mm (' /<< 5 +/<<, This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 05-07-2006 NOS (c) by SEMIKRON