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BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC846 / BC847 / BC848 / BC850 Rev. 1.9 1
August 2015
BC846 / BC847 / BC848 / BC850
NPN Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for Automati c Insertion in Thick and Thin-film Circuits
• Low Noise: BC850
• Complement to BC856, BC857, BC858, BC859, and BC860
Ordering Information(1)
Note:
1. Affix “-A,-B,-C” means hFE clas sification. Affix “-M” mea ns SOT-23 packa ge. Affi x “-TF” means the t ape and ree l type
packing.
Part Number Marking Package Packing Method
BC846AMTF 8AA SOT-23 3L Tape and Reel
BC846BMTF 8AB SOT-23 3L Tape and Reel
BC846CMTF 8AC SOT-23 3L Tape and Reel
BC847AMTF 8BA SOT-23 3L Tape and Reel
BC847BMTF 8BB SOT-23 3L Tape and Reel
BC847CMTF 8BC SOT-23 3L Tape and Reel
BC848BMTF 8 CB SOT-23 3L Tape and Reel
BC848CMTF 8CC SOT-23 3L Tape and Reel
BC850AMTF 8EA SOT-23 3L Tape and Reel
BC850CMTF 8EC SOT-23 3L Tape and Reel
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3
BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC846 / BC847 / BC848 / BC850 Rev. 1.9 2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Thermal Characteristics(2)
Values are at TA = 25°C unless otherwise noted.
Note:
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Symbol Parameter Value Unit
VCBO Collector-Base Voltage BC846 80 VBC847 / BC850 50
BC848 30
VCEO Collector-Emitter Voltage BC846 65 VBC847 / BC850 45
BC848 30
VEBO Emitter-Base Voltage BC846 / BC847 6 V
BC848 / BC850 5
ICCollector Current (DC) 100 mA
TJJunction Temperat ure 150 °C
TSTG Storage Temperature Range -65 to +150 °C
Symbol Parameter Value Unit
PDPower Dissipation 310 mW
Derate Above 2 5°C2.48mW/°C
RθJA Thermal Resistance, Junction-to-Ambient 403 °C/W
BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC846 / BC847 / BC848 / BC850 Rev. 1.9 3
Electrical Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Note:
3. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%
hFE Classification
Symbol Parameter Conditions Min. Typ. Max. Unit
ICBO Collector Cut-Off Current VCB = 30 V, IE = 0 15 nA
hFE DC Current Gain VCE = 5 V, IC = 2 mA 110 800
VCE(sat) Collector-Emitter Saturation
Voltage IC = 10 mA, IB = 0.5 mA 90 250 mV
IC = 100 mA, IB = 5 mA 200 600
VBE(sat) Collector-Base Saturation Voltage IC = 10 mA, IB = 0.5 mA 700 mV
IC = 100 mA, IB = 5 mA 900
VBE(on) Base-Emitter On Voltage VCE = 5 V, IC = 2 mA 580 660 700 mV
VCE = 5 V, IC = 10 mA 720
fTCurrent Gain Bandwidth Product VCE = 5 V, IC = 10 mA,
f = 100 MHz 300 MHz
Cob Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz 3.5 6.0 pF
Cib Input Capacitance VEB = 0.5 V, IC = 0, f = 1 MHz 9 pF
NF Noise
Figure
BC846 / BC847 / BC848 VCE = 5 V, IC = 200 μA,
RG = 2 kΩ, f = 1 kHz 2.0 10.0
dB
BC850 1.2 4.0
BC850 VCE = 5 V, IC = 200 μA,
RG = 2 kΩ, f = 30 to 15000 Hz 1.4 3.0
Classification A B C
hFE 110 ~ 220 200 ~ 450 420 ~ 800
BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC846 / BC847 / BC848 / BC850 Rev. 1.9 4
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC Current Gain
Figure 3. Currector-Emitter Saturation Voltage Figure 4. Currector-Emitt er Saturation Voltage
Figure 5. Base-Emitter Saturation Voltage Figure 6. Base-Emitter Saturation Voltage
0 4 8 121620
0
20
40
60
80
100
IB = 50μA
IB = 100μA
IB = 150μA
IB = 200μA
IB = 250μA
IB = 300 μA
IB = 350μA
IB = 400μA
IC[mA], COLLECTOR CURRENT
VCE[V], COLL ECTOR-EMITTE R VOLTAGE
0.1 1 10 100 1000
10
100
1000
TA = 150 oC
TA = 25 oC
VCE = 5V
hFE, DC CURRENT GAIN
IC [mA], COLLECTOR CURRENT
TA = -55 oC
0.1 1 10 100 1000
0.01
0.1
1
TA = 150oC
TA = -55oC
IC = 10IB
VCE(SAT) [V], COLLECTOR-EMITTER
SATURATION VOLTAGE
IC [mA], COLLECTOR CURRENT
TA = 25oC
0.1 1 10 100 1000
0.01
0.1
1
10
TA = 150oC
TA = -55oC
IC = 20IB
VCE(SAT) [V], COLLECTOR-EMITTER
SATURATION VOLTAGE
IC [mA], COLLECTOR CURRENT
TA = 25oC
0.1 1 10 100 1000
0.2
0.4
0.6
0.8
1.0
1.2
TA = 150oC
TA = -55oC
IC = 10IB
VBE(SAT) [V], BASE-EMITTER SATURATION VOLTAGE
IC [mA], COLLECTOR CURRENT
TA = 25oC
0.1 1 10 100 1000
0.2
0.4
0.6
0.8
1.0
1.2
TA = 150oC
TA = -55oC
IC = 20IB
VBE(SAT) [V], BASE-EMITTER SATU RATION VOLTAGE
IC [mA], COLLECTOR CURRENT
TA = 25oC
BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC846 / BC847 / BC848 / BC850 Rev. 1.9 5
Typical Performance Characteristics (Continued)
Figure 7. Base-Emitter On Voltage Figure 8. Collector Output Capacitance
Figure 9. Current Gain Bandwidth Product
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.1
1
10
100
TA = 150oCTA = -55oC
VCE = 5V
IC [mA], COLLECTOR CURRENT
VBE(ON) [V], BASE-EMITTER ON VOLTAGE
TA = 25oC
1 10 100 1000
0.1
1
10
100
f=1MHz
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
0.1 1 10 100
1
10
100
1000
VCE=5V
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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