EAMOSPEC COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS General-purpose power amplifier and switching applications FEATURES: * Low Collector-Emitter Saturation Voltage - VeesaTr)=1-0V(Max.)@I,=5.0A * Execllent DC Current Gain - hFE = 20 ~ 100 @ 1, =4.0A PNP NPN 2N5875 2N5877 2N5876 2N5878 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS MAXIMUM RATINGS 60 - 80 Volts er . 150 Watts Characteristic Symbol 2N5875 2N5876 Unit 2N5877 2N5878 Collector-Emitter Voltage Voeo 60 80 Vv Collector-Base Voltage Vopo 60 80 Vv Emitter-Base Voltage VeBo 5.0 V Collector Current-Continuous le 10 A -Peak lom 20 Base Current Ip 4.0 A Total Power Dissipation@T,,=25C Py 150 WwW Derate above 25C 0.857 wc Operating and Storage Junction Ty. Ts7 C Temperature Range - 65 to +200 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case Rejc 1.17 C/W FIGURE -1 POWER DERATING 160 140 120 &8ss Pp , POWER DISSIPATION(WATTS) NM Qo Oo 0 2 50 75 100 125 150 175 200 To, TEMPERATURE( ?C) PIN 1.BASE 2.EMITTER COLLECTOR(CASE) MILLIMETERS DIM MIN MAX A 38.75 39.96 B 19.28 22.23 c 796 9.28 D 11.18 12.19 E 25.20 26.67 F 0.92 1.09 G 1.38 1.62 H 29.90 30.40 I 16.64 17H J 3.88 4.36 K 10.67 11.182N5875, 2N5876 PNP / 2N5877,2N5878 NPN Oe ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) Veceoisus) V (I, = 200 mA, I, = 0) 2N5875, 2N5877 60 2N5876, 2N5878 8C Collector Cutoff Current lceo mA (Veg = 30 V, I, = 0) 2N5875, 2N5877 1.0 (Ve, = 40 V, 1, = 0) 2N5876, 2N5878 1.0 Collector Cutoff Current loex mA ( Veg = 60 V, Vegjorn = 1-5 V ) 2N5875, 2N5877 0.5 ( Veg = 80 V, Vegiom = 1-5 V) 2N5876, 2N5878 0.5 ( Veg = 60 V, Vegiom = 1-5 V, Te = 150C )} 2N5875, 2N5877 5.0 ( Veg = 80 V, Vesiom = 1-5 V, Te, = 150C ) 2N5876, 2N5878 5.0 Collector Cutoff Current lcBo mA (Veg = 60 V, I, = 0 ) 2N5875, 2N5877 0.5 (Veg = 80 V, Ip =O ) 2N5876, 2N5878 0.5 Emitter Cutoff Current leno mA ( Vep = 5.0V, 1, =0) 1.0 ON CHARACTERISTICS (1) DC Current Gain hFE (1, =1.0A, V., =4.0V) 35 (|, =4.0A, V,, = 4.0V) 20 100 (1, =10A, Vy, = 4.0V) 4.0 Collector-Emitter saturation Voltage Vee;sat) V (|, =5.0A, 1, =0.5A) 1.0 (I, = 10A,1,=2.5A) 3.0 Base-Emitter On Voitage Vejen) Vv (Ig = 4.0A, Veg = 4.0 V) 1.5 Base-Emitter Saturation Voltage Vee;sat) V (I, =10A, 1, =2.5A) 2.5 DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product (2) f, MHz (Ig = 0.5A, Veg = 10 V, f = 1.0 MHz) 4.0 Small-Signal Current Gain N te 20 (Ig =1.0A, Veg = 4.0 V, f = 1.0 KHZ ) (1) Pulse Test: Pulse width = 300 us , Duty Cycle 2.0% (2) fr= |My | * fest2N5875,2N5876 PNP / 2N5877,2N5878 NPN a ACTIVE-REGION SAFE OPERATING AREA (SOA) _- 100 us There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate Ic-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of SOA curve is base on T ypiqg=200 C:Te is _- Bonding Wire Limit variable depending on conditions. second breakdown Second Breakdown Linit pulse limits are valid for duty cycles to 10% provided -Thermally Limited T-=25C T.pgS200C, At high case temperatures, thermal limita - tion will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Ie , COLLECTOR CURRENT (Amp) "5 7 40 20 30 50 70 100 Vce , COLLECTOR EMITTER VOLTAGE (VOLTS) TURN-OFF TIME CAPACITANCES c zg & = i 2 z F 5 " a a oO 2N5875,2N5876(PNP) emo 2N5875,2N5876 2N5877,2N5878(NPN) 2N5877,2N5878 02 03 05 O07 1.0 2.0 3.0 5.0 7.0 10 05 40 20 30 50 40 30 30 50 ic, COLLECTOR CURRENT (AMP) Va, REVERSE VOLTAGE(VOLTS) TURN-ON TIME t g@ Vie(orn25.0V 2N5877,2N5878(NPN) 0.1 02 03 05 07 1.0 20 3.0 5.0 7.0 10 Ie , COLLECTOR CURRENT (AMP)