BC556/557/558/559/560 — PNP Epitaxial Silicon Transistor
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC556/557/558/559/560 Re v. B0 1
October 2012
BC556/557/558/559/560
PNP Epitaxial Silicon Transistor
Features
• Switching and Amplifier
• High Voltage: BC556, VCEO = -65V
• Low Noise: BC559, BC560
•Complement to BC546 ... BC 550
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Electrical Characteristics Ta = 25C unless otherwise noted
hFE Classification
Symbol Parameter Value Units
VCBO Collector-Base Voltage
: BC556
: BC557/560
: BC558/559
-80
-50
-30
V
V
V
VCEO Collector-Emitter Voltage
: BC556
: BC557/560
: BC558/559
-65
-45
-30
V
V
V
VEBO Emitter-Base Voltage -5 V
ICCollector Current (DC) -100 mA
PCCollector Power Dissipation 500 mW
TJJunction Temp erat ure 150 C
TSTG Storage Temperature -65 ~ 150 C
Symbol Parameter Test Condition Min. Typ. Max. Units
ICBO Collector Cut-off Current VCB= -30V, IE=0 -15 nA
hFE DC Current Gain VCE= -5V, IC=2mA 110 800
VCE(sat) Collector-Emitter Saturation Volt-
age IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA -90
-250 -300
-650 mV
mV
VBE(sat) Collector-Base Saturation Voltage IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA -700
-900 mV
mV
VBE(on) Base-Emitter On Voltage
VCE= -5V, IC= -2mA
VCE= -5V, IC= -10mA -600 -660 -750
-800 mV
mV
fTCurrent Gain Band width Product VCE= -5V, IC= -10mA,
f=10MHz 150 MHz
Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 6 pF
NF Noise Figure : BC556/557/558
: BC559/560
: BC559
: BC560
VCE= -5V, IC= -200A
f=1KHz, RG=2K
VCE= -5V, IC= -200A
RG=2Kf=30~15000MHz
2
1
1.2
1.2
10
4
4
2
dB
dB
dB
dB
Classification A B C
hFE 110 ~ 220 200 ~ 450 420 ~ 800
1. Collector 2. Base 3. Emitter
TO-92
1
BC556/557/558/559/560 — PNP Epitaxial Silicon Transistor
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC556/557/558/559/560 Re v. B0 2
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
-2 -4 -6 -8 -10 -12 -14 -16 -18 -20
-0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
IB = -50A
IB = -100A
IB = -150A
IB = -200A
IB = -250 A
IB = -300A
IB = -350A
IB = -400A
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-0.1 -1 -10 -100
1
10
100
1000
VCE = -5V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-0.1 -1 -10 -100
-0.01
-0.1
-1
-10
IC = -10 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
-0.1
-1
-10
-100
VCE = -5V
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
-1 -10 -100
1
10
f=1MHz
IE = 0
Cob(pF), CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
-1 -10
10
100
1000
VCE = -5V
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
BC556/557/558/559/560 — PNP Epitaxial Silicon Transistor
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC556/557/558/559/560 Re v. B0 3
Physical Dimensions
D
TO-92
Dimensions in Millimeters
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I62
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