2N2906 2N2906A
2N2907 2N2907A
PNP SILICON TRANSISTOR DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2906, 2N2907
series types are silicon PNP epitaxial planar transistors
designed for small signal, general purpose switching
applications.
MARKING: FULL PART NUMBER
2N2906 2N2906A
MAXIMUM RATINGS: (TA=25°C) SYMBOL 2N2907 2N2907A UNITS
Collector-Base Voltage VCBO 60 60 V
Collector-Emitter Voltage VCEO 40 60 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 600 mA
Power Dissipation PD 400 mW
Power Dissipation (TC=25°C) PD 1.8 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance ΘJA 438 °C/W
Thermal Resistance ΘJC 97 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N2906 2N2906A
2N2907 2N2907A
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
ICBO V
CB=50V - 20 - 10 nA
ICBO V
CB=50V, TA=150°C - 20 - 10 μA
ICEV V
CE=30V, VEB=0.5V - 50 - 50 nA
BVCBO I
C=10μA 60 - 60 - V
BVCEO I
C=10mA 40 - 60 - V
BVEBO I
E=10μA 5.0 - 5.0 - V
VCE(SAT) I
C=150mA, IB=15mA - 0.4 - 0.4 V
VCE(SAT) I
C=500mA, IB=50mA - 1.6 - 1.6 V
VBE(SAT) I
C=150mA, IB=15mA - 1.3 - 1.3 V
VBE(SAT) I
C=500mA, IB=50mA - 2.6 - 2.6 V
fT V
CE=20V, IC=50mA, f=100MHz 200 - 200 - MHz
Cob V
CB=10V, IE=0, f=1.0MHz - 8.0 - 8.0 pF
Cib V
EB=2.0V, IC=0, f=1.0MHz - 30 - 30 pF
ton V
CC=30V, IC=150mA, IB1=15mA - 45 - 45 ns
toff V
CC=6.0V, IC=150mA, IB1=IB2=15mA - 100 - 100 ns
TO-18 CASE
R4 (30-January 2012)
www.centralsemi.com
2N2906 2N2906A
2N2907 2N2907A
PNP SILICON TRANSISTOR
TO-18 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C) 2N2906 2N2907
2N2906A 2N2907A
SYMBOL TEST CONDITIONS MIN MAX MIN MAX
hFE V
CE=10V, IC=0.1mA (2N2906, 2N2907) 20 - 35 -
hFE V
CE=10V, IC=0.1mA (2N2906A, 2N2907A) 40 - 75 -
hFE V
CE=10V, IC=1.0mA (2N2906, 2N2907) 25 - 50 -
hFE V
CE=10V, IC=1.0mA (2N2906A, 2N2907A) 40 - 100 -
hFE V
CE=10V, IC=10mA (2N2906, 2N2907) 35 - 75 -
hFE V
CE=10V, IC=10mA (2N2906A, 2N2907A) 40 - 100 -
hFE V
CE=10V, IC=150mA 40 120 100 300
hFE V
CE=10V, IC=500mA (2N2906, 2N2907) 20 - 30 -
hFE V
CE=10V, IC=500mA (2N2906A, 2N2907A) 40 - 50 -
www.centralsemi.com
R4 (30-January 2012)
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(001)
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2N2907 2N2906A 2N2907A