2SK3472 - Toshiba - Datasheet.Technology

2SK3472

2010-02-05

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS V)

2SK3472

Switching Regulator Applications

• Low drain-source ON-resistance: RDS (ON) = 4.0 mΩ (typ.)

• High forward transfer admittance: |Yfs| = 0.8 S (typ.)

• Low leakage current: IDSS = 100 μA (max) (VDS = 450 V)

• Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic Symbol Rating Unit

Drain-source voltage VDSS 450 V

Drain-gate voltage (RGS = 20 kΩ) VDGR 450 V

Gate-source voltage VGSS ±30 V

DC (Note 1) ID 1 A

Drain current

Pulse (Note 1) IDP 2 A

Drain power dissipation (Tc = 25°C) PD 20 W

Single-pulse avalanche energy (Note 2) EAS 122 mJ

Avalanche current IAR 1 A

Repetitive avalanche energy (Note 3) EAR 2 mJ

Channel temperature Tch 150 °C

Storage temperature range Tstg −55 to150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristic Symbol Max Unit

Thermal resistance, channel to case Rth (ch-c) 6.25 °C/W

Thermal resistance, channel to ambient Rth (ch-a) 125 °C/W

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: VDD = 90 V, Tch = 25°C (initial), L = 203 mH, RG = 25 Ω, IAR = 1 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

Unit: mm

1.1 ± 0. 2

0.1 ± 0. 1

1.0 5 MAX.

2.3 ± 0. 15

5.2 ± 0. 2

0.8 M A X.

0.6 M A X.

9.5 ± 0. 3

1.2 M A X.

1.5 ± 0. 2

6.5 ± 0. 2

0.6 M A X.

5.5 ± 0. 2

0.6 ± 0. 15

2.3 ± 0. 2

2.3 ± 0. 15

1. G ATE

2. DRAIN

（HEAT SINK）

3. SOURSE

JEDEC ―

JEITA ―

TOSHIBA 2-7J1B

Weight: 0.36 g (typ.)

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2SK3472

2010-02-05

Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA

Drain-source breakdown voltage V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V

Drain cutoff current IDSS V

DS = 450 V, VGS = 0 V ⎯ ⎯ 100 μA

Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 450 ⎯ ⎯ V

Gate threshold voltage Vth V

DS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V

Drain-source ON-resistance RDS (ON) V

GS = 10 V, ID = 0.5 A ⎯ 4.0 4.6 Ω

Forward transfer admittance ⎪Yfs⎪ V

DS = 10 V, ID = 0.5 A 0.3 0.8 ⎯ S

Input capacitance Ciss ⎯ 180 ⎯

Reverse transfer capacitance Crss ⎯ 2 ⎯

Output capacitance Coss

VDS = 25 V, VGS = 0 V, f = 1 MHz

⎯ 20 ⎯

Rise time tr ⎯ 7 ⎯

Turn-on time ton ⎯ 15 ⎯

Fall time tf ⎯ 30 ⎯

Switching time

Turn-off time toff

⎯ 70 ⎯

Total gate charge

(gate-source plus gate-drain) Qg ⎯ 5 ⎯

Gate-source charge Qgs ⎯ 3 ⎯

Gate-drain (“Miller”) charge Qgd

VDD ≈ 360 V, VGS = 10 V, ID = 1 A

⎯ 2 ⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 1 A

Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 2 A

Forward voltage (diode) VDSF I

DR = 1 A, VGS = 0 V ⎯ ⎯ −1.7

Reverse recovery time trr ⎯ 350 ⎯ μs

Reverse recovery charge Qrr

IDR = 1 A, VGS = 0 V,

dIDR/dt = 100 A/μs ⎯ 1.3 ⎯ μC

Marking

K3472

Lot No.

Note 4

Part No.

(or abbreviation code)

Duty ≤ 1%, tw = 10 μs

0 V

10 V

VGS

RL = 400 Ω

VDD ≈ 200 V

ID = 0.5 A

VOUT

10 Ω

Note 4 : A line under a Lot No. identifies the indication of product Labels

[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to

environmental matters such as the RoHS compatibility of Product.

The RoHS is Directive 2002/95/EC of the European Parliament and

of the Council of 27 January 2003 on the restriction of the use of certain

hazardous substances in electrical and electronic equipment.

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2SK3472

2010-02-05

Drain-source voltage VDS (V)

ID – VDS

Drain current ID (A)

Drain-source voltage VDS (V)

ID – VDS

Drain current ID (A)

Gate-source voltage VGS (V)

ID – VGS

Drain current ID (A)

Gate-source voltage VGS (V)

VDS – VGS

1.0

0.2

0.6

0.4

0.8

2 0 10

4 6 8

Common source

Tc = 25°C

pulse test

VGS = 4.5 V

5.0

5.25

5.5

5.75

8.0

6.0

4.75

2.0

0.4

1.2

0.8

1.6

10050

20 30 40

VGS = 4.5 V

6.25

5.25

5.5

5.75

6.0

10 Common source

Tc = 25°C

pulse test

8.0

5.0

Common source

VDS = 20 V

pulse test

2.0

0.4

1.2

0.8

1.6

2 0 10

4 6 8

Tc = −55°C

100

40 20

8 12 16

0.25

Common source

Tc = 25°C

pulse test

0.5

ID = 1 A

Drain current ID (A)

RDS (ON) − ID

Drain-source ON-resistance

RDS (ON) (Ω)

0.1 1

0.3 0.5 3 5

VGS = 10, 15 V

Common source

Tc = 25°C

pulse test

Forward transfer admittance ⎪Yfs⎪ (S)

Drain current ID (A)

⎪Yfs⎪ − ID

0.02

0.01

0.1

0.3

1 3 0.3

0.05

0.5

Common source

VDS = 20 V

pulse test

Tc = −55°C 25

100

0.1

0.03

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2SK3472

2010-02-05

Drain power dissipation PD (W)

Gate threshold voltage Vth (V)

Drain-source voltage VDS (V)

IDR − VDS

Drain reverse current IDR (A)

Drain-source voltage VDS (V)

Capacitance – VDS

Capacitance C (pF)

Case temperature Tc (°C)

Vth − Tc

Case temperature Tc (°C)

PD − Tc

Drain-source voltage VDS (V)

Gate-source voltage VGS (V)

Total gate charge Qg (nC)

Dynamic input/output characteristics

0.01

0.03

0.3

−0.20−1.2

−0.6 −0.4 −0.8 −1.0

1VGS = 0, −1 V

0.1

Common source

pulse test

0 80 120 20040 160

500

100

300

200

400

0 40 60 80 10020

Common source

ID = 1 A

Tc = 25°C

ulse test

180

VDS = 360 V

VGS

VDS

0 40 80 120 160

−80 −40

Common source

VDS = 10 V

ID = 1 mA

pulse test

100

1 0.1 10010

Ciss

Coss

Crss

Common source

VGS = 0 V

f = 1 MHz

Tc = 25°C

300

0.3 0.5 3 5 30 50

500

Case temperature Tc (°C)

RDS (ON) − Tc

Drain-source ON-resistance RDS (ON) (Ω)

−40 −80 160

0 40 80

Common source

VGS = 10 V

pulse test

0.25

ID = 1 A

0.5

120

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2SK3472

2010-02-05

10 μ 100 μ 1 m 10 m 100 m 1 10

0.01

0.03

0.1

Single pulse

0.01

0.02

0.05

0.1

0.2

Duty = 0.5

PDM

Duty = t/T

Rth (ch-c) = 6.25°C/W

0.3

rth − tw

EAS – Tch

Pulse width tw (s)

Channel temperature (initial) Tch (°C)

Normalized transient thermal impedance

rth (t)/Rth (ch-a)

Avalanche energy EAS (mJ)

Safe operating area

Drain-source voltage VDS (V)

Drain current ID (A)

0.01

0.1

10 100 1000

*: Single nonrepetitive pulse

Tc = 25°C

Curves must be derated

linearly with increase in

temperature.

ID max (continuous)

ID max (pulsed) *

DC operation

Tc = 25°C

1 ms *

VDSS max

0.03

0.3

100 μs *

150

120

50 75 100 125 150

Waveform

IAR

BVDSS

VDD V

RG = 25 Ω

VDD = 90 V, L = 203 mH ⎟

⎟

⎠

⎞

⎜

⎝

⎛

−

⋅⋅⋅= VDD

BVDSS

ΕAS

Test circuit

−15 V

15 V

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2SK3472

2010-02-05

RESTRICTIONS ON PRODUCT USE

• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information

in this document, and related hardware, software and systems (collectively “Product”) without notice.

• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with

TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.

• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are

responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and

systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily

injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the

Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of

all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes

for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the

instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their

own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such

design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,

diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating

parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR

APPLICATIONS.

• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring

equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.

Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or

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or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.

• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.

Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,

including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of

noncompliance with applicable laws and regulations.

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