2SK3472 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS V) 2SK3472 Switching Regulator Applications Unit: mm High forward transfer admittance: |Yfs| = 0.8 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V) * Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 5.5 0. 2 * * Absolute Maximum Ratings (Ta = 25C) Unit Drain-source voltage VDSS 450 V Drain-gate voltage (RGS = 20 k) VDGR 450 V Gate-source voltage VGSS 30 V ID 1 A DC (Note 1) IDP 2 A Drain power dissipation (Tc = 25C) PD 20 W Single-pulse avalanche energy (Note 2) EAS 122 mJ Pulse (Note 1) Avalanche current IAR 1 A EAR 2 mJ Channel temperature Tch 150 C Storage temperature range Tstg -55 to150 C Repetitive avalanche energy (Note 3) 1 2 3 2.3 0.2 Rating 0.6 MAX. 1.05 MAX. 0.1 0. 1 Symbol Drain current 1.1 0. 2 0.8 MAX. 0.6 0.15 Characteristic 0.6 MAX. 9.5 0.3 5.2 0. 2 Low drain-source ON-resistance: RDS (ON) = 4.0 m (typ.) 1.2 MAX. * 1.5 0. 2 6.5 0.2 2.3 0.15 2.3 0. 15 1. GATE 2. DRAIN HEAT SIN K 2 1 3 3. SOURSE JEDEC JEITA TOSHIBA 2-7J1B Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 6.25 C/W Thermal resistance, channel to ambient Rth (ch-a) 125 C/W Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 203 mH, RG = 25 , IAR = 1 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 http://store.iiic.cc/ 2010-02-05 2SK3472 Electrical Characteristics (Ta = 25C) Characteristic Symbol Min Typ. Max Unit IGSS VGS = 25 V, VDS = 0 V 10 A V (BR) GSS IG = 10 A, VDS = 0 V 30 V IDSS VDS = 450 V, VGS = 0 V 100 A Gate leakage current Drain-source breakdown voltage Test Condition Drain cutoff current V (BR) DSS ID = 10 mA, VGS = 0 V 450 V Vth VDS = 10 V, ID = 1 mA 2.0 4.0 V Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 0.5 A 4.0 4.6 Forward transfer admittance Yfs VDS = 10 V, ID = 0.5 A 0.3 0.8 S Input capacitance Ciss 180 Reverse transfer capacitance Crss 2 Output capacitance Coss 20 7 15 30 70 5 3 2 Test Condition Min Typ. Max Unit 1 A Drain-source breakdown voltage Gate threshold voltage Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz ID = 0.5 A 10 V VGS tr 0V ton Switching time Fall time RL = 400 10 Turn-on time VOUT tf Turn-off time Duty 1%, tw = 10 s toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain ("Miller") charge Qgd VDD 200 V VDD 360 V, VGS = 10 V, ID = 1 A pF ns nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristic Symbol Continuous drain reverse current (Note 1) IDR IDRP 2 A Forward voltage (diode) VDSF IDR = 1 A, VGS = 0 V -1.7 V Reverse recovery time trr IDR = 1 A, VGS = 0 V, 350 s Reverse recovery charge Qrr dIDR/dt = 100 A/s 1.3 C Pulse drain reverse current (Note 1) Marking Note 4 : A line under a Lot No. identifies the indication of product Labels [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] K3472 Part No. (or abbreviation code) Lot No. Note 4 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 http://store.iiic.cc/ 2010-02-05 2SK3472 ID - VDS 1.0 10 5.75 6.0 0.8 5.5 0.6 5.25 0.4 5.0 4.75 0.2 0 2 4 6 Drain-source voltage 8 6.0 5.75 1.2 5.5 0.8 5.25 5.0 0.4 VGS = 4.5 V 0 VGS = 4.5 V 0 10 0 10 VDS (V) 20 VDS (V) 1.2 Drain-source voltage Drain current ID (A) 1.6 0.8 100 25 0 2 4 6 Gate-source voltage 50 VDS (V) Common source Tc = 25C pulse test 16 12 8 ID = 1 A 4 0.25 Tc = -55C 0 40 VDS - VGS 20 Common source VDS = 20 V pulse test 0.4 30 Drain-source voltage ID - VGS 2.0 Common source Tc = 25C pulse test 6.25 8.0 1.6 8.0 Drain current ID (A) Drain current ID (A) ID - VDS 2.0 Common source 10 Tc = 25C pulse test 8 0 10 0 4 VGS (V) 8 0.5 12 Gate-source voltage 16 20 VGS (V) RDS (ON) - ID Yfs - ID 50 Common source 5 V DS = 20 V 3 pulse test 100 0.5 0.3 0.1 () 25 Common source 30 Tc = 25C pulse test RDS (ON) Tc = -55C 1 Drain-source ON-resistance Forward transfer admittance Yfs (S) 10 10 5 VGS = 10, 15 V 3 0.05 0.02 0.01 0.03 0.1 0.3 1 3 1 0.1 10 Drain current ID (A) 0.3 0.5 1 3 5 10 Drain current ID (A) 3 http://store.iiic.cc/ 2010-02-05 2SK3472 IDR - VDS Common source VGS = 10 V pulse test Common source (A) ID = 1 A 8 0.5 0.25 2 1 pulse test 3 1 0.3 0.1 10 3 0.03 1 -40 0 40 80 Case temperature 120 0.01 160 0 Tc (C) -0.2 -0.4 Vth (V) 100 50 Gate threshold voltage (pF) Capacitance C Ciss 30 Coss 10 5 Common source VGS = 0 V f = 1 MHz Tc = 25C 1 0.1 0.3 0.5 -1.2 Common source VDS = 10 V ID = 1 mA pulse test 4 3 2 1 Crss 1 3 10 5 Drain-source voltage 30 50 0 -80 100 -40 0 40 80 PD - Tc VDS (V) Drain-source voltage 30 20 10 Case temperature 120 160 Dynamic input/output characteristics 500 80 120 Case temperature Tc (C) VDS (V) 40 40 -1.0 VDS (V) 5 300 Drain power dissipation PD (W) -0.8 Vth - Tc Capacitance - VDS 0 0 -0.6 Drain-source voltage 500 3 VGS = 0, -1 V 160 400 180 VDS 20 16 90 12 300 VDS = 360 V 200 8 VGS 4 100 0 0 200 Common source ID = 1 A Tc = 25C pulse test 20 40 60 80 VGS (V) 0 -80 Gate-source voltage 12 10 Drain reverse current IDR Drain-source ON-resistance RDS (ON) () RDS (ON) - Tc 16 0 100 Total gate charge Qg (nC) Tc (C) 4 http://store.iiic.cc/ 2010-02-05 2SK3472 rth - tw Normalized transient thermal impedance rth (t)/Rth (ch-a) 10 3 1 Duty = 0.5 0.3 0.2 PDM 0.1 0.1 Single pulse 0.05 t 0.02 T 0.03 Duty = t/T Rth (ch-c) = 6.25C/W 0.01 0.01 10 100 1m 10 m Pulse width 100 m tw 1 Safe operating area EAS - Tch 30 150 Drain current ID (A) 1 ID max (pulsed) * Avalanche energy EAS (mJ) 10 3 100 s * ID max (continuous) 1 ms * 0.3 10 (s) DC operation Tc = 25C 120 90 60 30 0.1 *: Single nonrepetitive pulse Tc = 25C 0.03 Curves must be derated linearly with increase in temperature. 0.01 10 1 Drain-source voltage 0 25 50 75 100 125 150 Channel temperature (initial) Tch (C) VDSS max 100 1000 VDS (V) 15 V BVDSS IAR -15 V VDD Test circuit RG = 25 VDD = 90 V, L = 203 mH 5 http://store.iiic.cc/ VDS Waveform AS = 1 B VDSS L I2 B 2 - V VDSS DD 2010-02-05 2SK3472 RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. * Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact ("Unintended Use"). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. 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No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. * ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. * Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. * Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 http://store.iiic.cc/ 2010-02-05