2N7002DWA-7 - DIODES INC - Datasheet.Technology

2N7002DWA

Document number: DS36120 Rev. 9 - 3

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2N7002DWA

NEW PROD UCT

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

BVDSS

RDS(ON)

Package

ID

TA = +25°C

60V

8Ω @ VGS = 5V

SOT363

170mA

6Ω @ VGS = 10V

200mA

Description

This new generation MOSFET is designed to minimize the on-state

resistance (RDS(ON)), yet maintain superior switching performance,

making it ideal for high-efficiency power management applications.

Applications

 DC-DC Converters

 Power Management Functions

 Battery Operated Systems and Solid-State Relays

 Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc.

Features

 Dual N-Channel MOSFET

 Low On-Resistance

 Low Gate Threshold Voltage

 Low Input Capacitance

 Fast Switching Speed

 Small Surface Mount Package

 HBM Class 1C

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT363

 Case Material: Molded Plastic.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe

Solderable per MIL-STD-202, Method 208

 Terminal Connections: See Diagram

 Weight: 0.006 grams (Approximate)

Ordering Information (Notes 4 & 5)

Part Number

Compliance

Case

Packaging

2N7002DWA-7

Standard

SOT363

3,000/Tape & Reel

2N7002DWA-13

Standard

SOT363

10,000/Tape & Reel

2N7002DWAQ-7

Automotive

SOT363

3,000/Tape & Reel

2N7002DWAQ-13

Automotive

SOT363

10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the

same, except where specified. For more information, please refer to http://www.diodes.com/product_compliance_definitions.html.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

SOT363

Top View

Internal Schematic

S

1

D

1

D

2

S

2

G

1

G

2

HBM Class 1C

NOT RECOMMENDED FOR NEW DESIGN

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2N7002DWA

Document number: DS36120 Rev. 9 - 3

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2N7002DWA

NEW PROD UCT

Marking Information

Date Code Key

Year

2012

-

2017

2018

2019

2020

2021

2022

2023

2024

Code

Z

-

E

F

G

H

I

J

K

L

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

60

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

ID

180

140

mA

Continuous Drain Current (Note 6) VGS = 5V

Steady

State

TA = +25°C

TA = +70°C

ID

150

120

mA

Continuous Drain Current (Note 7) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

ID

200

160

mA

Continuous Drain Current (Note 7) VGS = 5V

Steady

State

TA = +25°C

TA = +70°C

ID

170

140

mA

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

700

mA

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 6)

PD

300

mW

Thermal Resistance, Junction to Ambient (Note 6)

RθJA

435

°C/W

Total Power Dissipation (Note 7)

PD

400

mW

Thermal Resistance, Junction to Ambient (Note 7)

RθJA

330

°C/W

Thermal Resistance, Junction to Case (Note 7)

RθJC

139

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.

MM0 YM

MM1 YM

MM4 YM

MM0 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: E = 2017)

M = Month (ex: 9 = September)

MM1 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: E = 2017)

M = Month (ex: 9 = September)

MM4 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: E = 2017)

M = Month (ex: 9 = September)

NOT RECOMMENDED FOR NEW DESIGN

USE DMN65D8LDW

2N7002DWA

Document number: DS36120 Rev. 9 - 3

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2N7002DWA

NEW PROD UCT

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

60

—

V

VGS = 0V, ID = 250µA

Zero Gate Voltage Drain Current

IDSS

—

1.0

µA

VDS = 60V, VGS = 0V

Gate-Body Leakage

IGSS

—

±5

µA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

0.8

—

2.5

V

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)

—

8

Ω

VGS = 5.0V, ID = 0.115A

—

6

Ω

VGS = 10.0V, ID = 0.115A

Forward Transconductance

gFS

80

—

mS

VDS = 10V, ID = 0.115A

Diode Forward Voltage

VSD

—

0.8

1.2

V

VGS = 0V, IS = 115mA

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

—

22.0

—

pF

VDS = 25V, VGS = 0V, f = 1.0MHz

Output Capacitance

Coss

—

3.2

—

Reverse Transfer Capacitance

Crss

—

2.0

—

Gate Resistance

RG

—

88

—

Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge VGS = 10V

Qg

—

0.87

—

nC

VGS = 10V, VDS = 30V,

ID = 150mA

Total Gate Charge VGS = 4.5V

Qg

—

0.43

—

Gate-Source Charge

Qgs

—

0.11

—

Gate-Drain Charge

Qgd

—

0.11

—

Turn-On Delay Time

tD(ON)

—

3.3

—

ns

VDD = 30V, ID = 0.115A, VGEN = 10V,

RGEN = 25Ω

Turn-On Rise Time

tR

—

3.2

—

Turn-Off Delay Time

tD(OFF)

—

12.0

—

Turn-Off Fall Time

tF

—

6.3

—

Notes: 8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

NOT RECOMMENDED FOR NEW DESIGN

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2N7002DWA

Document number: DS36120 Rev. 9 - 3

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2N7002DWA

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0

0.1

0.2

0.3

0.4

0.5

0.6

V , DRAIN-SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristic

DS

I , DRAIN CURRENT (A)

D

V = 2.5V

GS

V = 3.0V

GS

V = 3.5V

GS

V = 4.5V

GS

V = 10V

GS

V = 5.0V

GS V = 4.0V

GS

0.5

1.5

2.5

3.5

4.5

0 0.1 0.2 0.3 0.4 0.5 0.6

0

1.0

2.0

3.0

4.0

5.0

I , DRAIN-SOURCE CURRENT (A)

D

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON) 

V = 5V

GS

V = 10V

GS

0

1

2

3

4

5

6

7

8

9

0 2 4 6 8 10 12 14 16 18 20

10

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 4 Typical Drain-Source On-Resistance

vs. Gate-Source Voltage

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON) 

I = 350mA

D

0.5

1.5

2.5

0

1.0

2.0

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

Figure 6 On-Resistance Variation with Temperature

J

R , DRAIN-SOURCE

ON-RESISTANCE (NORMALIZED)

DS(ON)

V = V

I = 115mA

GS

D

5.0

V = V

I = 115mA

GS

D

10

0

1

2

3

4

5

6

7

8

9

0

0.1

0.2

0.3

0.4

0.5

0.6

10

R

,

D

R

A

I

N

-

S

O

U

R

C

E

O

N

-

R

E

S

I

S

T

A

N

C

E

(

)

D

S

(

O

N

)



I , DRAIN CURRENT (A)

D

Figure 5 Typical On-Resistance vs.

Drain Current and Temperature

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V = 4.5V

GS

RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()

0.1

0.2

0.3

0.4

0.5

0

1.0

1.5

2.0

2.5

3.0

3.5

4.0

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 2 Typical Transfer Characteristics

I

,

D

R

A

I

N

C

U

R

E

N

T

(

A

)

D

V = 5.0V

DS

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

ID, DRAIN CURRENT (A)

NOT RECOMMENDED FOR NEW DESIGN

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0

1

2

3

4

5

6

7

8

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

Figure 7 On-Resistance Variation with Temperature

J

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON) 

V = V

I = 115mA

GS

D

5.0

V = V

I = 115mA

GS

D

10

0.001

0.01

0.1

1

0.1

1

10

100

V , DRAIN-SOURCE VOLTAGE (V)

Figure 10 SOA, Safe Operation Area

DS

-

I

,

D

R

A

I

N

C

U

R

E

N

T

(

A

)

D

R

Limited

DS(on)

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

W

T = 150°C

T = 25°C

J(max)

A

V = 8V

Single Pulse

GS

DUT on 1 * MRP Board

0.0001

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

0.001

0.01

0.1

1

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forward Voltage vs. Current

I

,

S

O

U

R

C

E

C

U

R

E

N

T

(

A

)

S

T = 25°C

A

T = -55°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

IS, SOURCE CURRENT (A)

1.3

1.6

1.9

2.2

2.5

1.0

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE (C)

Figure 8 Gate Threshold Variation vs.Temperature

J



V

,

G

A

T

E

T

H

R

E

S

H

O

L

D

V

O

L

T

A

G

E

(

V

)

G

S

(

t

h

)

I = 1mA

D

I = 250µA

D

VGS(TH), GATE THRESHOLD VOLTAGE (V)

ID, DRAIN CURRENT (A)

NOT RECOMMENDED FOR NEW DESIGN

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Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.

e

D

L

E1

b

E

F

A2

A1

ca

Y1 G

Y

X

C

SOT363

Dim

Min

Max

Typ

A1

0.00

0.10

0.05

A2

0.90

1.00

b

0.10

0.30

0.25

c

0.10

0.22

0.11

D

1.80

2.20

2.15

E

2.00

2.20

2.10

E1

1.15

1.35

1.30

e

0.650 BSC

F

0.40

0.45

0.425

L

0.25

0.40

0.30

a

0°

8°

--

All Dimensions in mm

Dimensions

Value

(in mm)

C

0.650

G

1.300

X

0.420

Y

0.600

Y1

2.500

SOT363

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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