NOT RECOMMENDED FOR NEW DESIGN USE DMN65D8LDW 2N7002DWA DUAL N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features BVDSS RDS(ON) Package 60V 8 @ VGS = 5V 6 @ VGS = 10V SOT363 ID TA = +25C 170mA 200mA Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package HBM Class 1C Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability making it ideal for high-efficiency power management applications. Mechanical Data Applications DC-DC Converters Power Management Functions Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. Case: SOT363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.006 grams (Approximate) SOT363 HBM Class 1C D2 G1 S1 S2 G2 D1 Top View Internal Schematic Top View Ordering Information (Notes 4 & 5) Part Number 2N7002DWA-7 2N7002DWA-13 2N7002DWAQ-7 2N7002DWAQ-13 Notes: Compliance Standard Standard Automotive Automotive Case SOT363 SOT363 SOT363 SOT363 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 2N7002DWA Document number: DS36120 Rev. 9 - 3 1 of 7 www.diodes.com March 2017 (c) Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMN65D8LDW 2N7002DWA Marking Information MM1 YM NEW PRODUCT MM0 YM Month Code 2012 Z Jan 1 MM4 YM MM1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: E = 2017) M = Month (ex: 9 = September) MM0 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: E = 2017) M = Month (ex: 9 = September) Date Code Key Year Code MM4 YM MM1 YM MM0 YM Feb 2 2017 E Mar 3 2018 F Apr 4 May 5 2019 G Jun 6 MM4 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: E = 2017) M = Month (ex: 9 = September) 2020 H Jul 7 2021 I Aug 8 2022 J Sep 9 2023 K Oct O 2024 L Nov N Dec D Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V Steady State Continuous Drain Current (Note 6) VGS = 5V Steady State Continuous Drain Current (Note 7) VGS = 10V Steady State Continuous Drain Current (Note 7) VGS = 5V Steady State TA = +25C TA = +70C TA = +25C TA = +70C TA = +25C TA = +70C TA = +25C TA = +70C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) ID Value 60 20 180 140 ID 150 120 mA ID 200 160 mA ID IDM 170 140 700 Unit V V mA mA mA Thermal Characteristics Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range Notes: Symbol PD RJA PD RJA RJC TJ, TSTG Value 300 435 400 330 139 -55 to +150 Unit mW C/W mW C/W C/W C 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 2N7002DWA Document number: DS36120 Rev. 9 - 3 2 of 7 www.diodes.com March 2017 (c) Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMN65D8LDW NEW PRODUCT Electrical Characteristics 2N7002DWA (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 -- -- -- -- -- -- 1.0 5 V A A VGS = 0V, ID = 250A VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS(TH) Static Drain-Source On-Resistance RDS(ON) 0.8 -- -- 80 -- -- -- -- -- 0.8 2.5 8 6 -- 1.2 V mS V VDS = VGS, ID = 250A VGS = 5.0V, ID = 0.115A VGS = 10.0V, ID = 0.115A VDS = 10V, ID = 0.115A VGS = 0V, IS = 115mA -- -- -- -- -- -- -- -- -- -- -- -- 22.0 3.2 2.0 88 0.87 0.43 0.11 0.11 3.3 3.2 12.0 6.3 -- -- -- -- -- -- -- -- -- -- -- -- pF VDS = 25V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz nC VGS = 10V, VDS = 30V, ID = 150mA ns VDD = 30V, ID = 0.115A, VGEN = 10V, RGEN = 25 Forward Transconductance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge VGS = 10V Total Gate Charge VGS = 4.5V Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: gFS VSD Ciss Coss Crss RG Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF Test Condition 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 2N7002DWA Document number: DS36120 Rev. 9 - 3 3 of 7 www.diodes.com March 2017 (c) Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMN65D8LDW 2N7002DWA 0.5 0.6 VGS = 10V 0.4 0.3 VGS = 3.0V 0.2 VDS = 5.0V 0.4 )A ( T N E R 0.3 R U C N IA 0.2 R D ,D I 0.1 VGS = 3.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 4.5V 0.1 TA = 150C TA = 125C TA = 85C TA = 25C TA = -55C VGS = 2.5V 0 1.0 0 1.5 2.0 2.5 3.0 3.5 VGS , GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics ) ( E C N A T S IS E R -N O E C R U O S -N I A R D , )N O (S D R RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 5.0 4.5 4.0 VGS = 5V 3.5 3.0 VGS = 10V 2.5 2.0 1.5 1.0 0.5 0 0 0.1 0.2 0.3 0.4 0.5 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.6 4.0 10 9 8 7 6 5 4 3 2 ID = 350mA 1 0 0 2 4 6 8 10 12 14 16 18 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 2.5 10 VGS = 4.5V 9 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE () NEW PRODUCT VGS = 4.0V VGS = 5.0V 0.5 8 TA = 150C 7 TA = 125C 6 5 TA = 85C 4 3 TA = 25C 2 TA = -55C 2.0 VGS = 10 V ID = 115mA 1.5 VGS = 5.0V ID = 115mA 1.0 0.5 1 0 0 0.1 0.2 0.3 0.4 0.5 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature 2N7002DWA Document number: DS36120 Rev. 9 - 3 0.6 4 of 7 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature March 2017 (c) Diodes Incorporated 2N7002DWA 2.5 )V ( E G A T L O V D L O H S E R H T E T A G , )h VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 8 7 6 5 VGS = 5.0V ID = 115mA 4 3 VGS = 10V ID = 115mA 2 2.2 1.9 ID = 1mA 1.6 ID = 250A 1.3 t( S G 1 V 0 -50 1.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (C) Figure 8 Gate Threshold Variation vs.Temperature )A 0.1 ( T N E R R U C 0.01 E C R U O S , S 0.001 I 1 )A ( T 0.1 N E R R U C N I A R D 0.01 ,D -I TA = 150C TA = 125C TA = 85C TA = 25C TA = -55C 0.0001 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VSD , SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 2N7002DWA Document number: DS36120 Rev. 9 - 3 RDS(on) Limited ID, DRAIN CURRENT (A) 1 IS, SOURCE CURRENT (A) NEW PRODUCT NOT RECOMMENDED FOR NEW DESIGN USE DMN65D8LDW DC PW= 10s PW = 1s PW = 100ms PW = 10ms PW = 1ms TJ(max) = 150C TA = 25C VGS = 8V Single Pulse DUT on 1 * MRP Board 0.001 0.1 5 of 7 www.diodes.com PW = 100s 1 10 V DS , DRAIN-SOURCE VOLTAGE (V) Figure 10 SOA, Safe Operation Area 100 March 2017 (c) Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMN65D8LDW 2N7002DWA Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. NEW PRODUCT SOT363 E SOT363 Dim Min Max Typ A1 0.00 0.10 0.05 A2 0.90 1.00 1.00 b 0.10 0.30 0.25 c 0.10 0.22 0.11 D 1.80 2.20 2.15 E 2.00 2.20 2.10 E1 1.15 1.35 1.30 e 0.650 BSC F 0.40 0.45 0.425 L 0.25 0.40 0.30 a 0 8 -All Dimensions in mm E1 F b D A2 c L e A1 a Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT363 C Dimensions C G X Y Y1 G Y1 Value (in mm) 0.650 1.300 0.420 0.600 2.500 Y X 2N7002DWA Document number: DS36120 Rev. 9 - 3 6 of 7 www.diodes.com March 2017 (c) Diodes Incorporated 2N7002DWA IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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