IXGQ170N30PB - Zilog - Datasheet.Technology

PolarTM High Speed

IGBT

for PDP Applications

Symbol Test Conditions Maximum Ratings

VCES TJ = 25°C to 150°C 300 V

VGEM ±30 V

IC25 TC = 25°C, IGBT chip capability 170 A

ICP TJ ≤ 150°C, tp < 10 μs 360 A

IC(RMS) Lead current limit 75 A

SSOA VGE = 15 V, TVJ = 150°C, RG = 20 Ω ICM = 170 A

(RBSOA) Clamped inductive load, VCE < 300 V

PCTC = 25°C 330 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TLMaximum lead temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

TSOLD Maximum plastic body temperature for 10 s. 260 °C

MdMounting torque 1.13/10 Nm/lb.in.

Weight 5.5 g

DS99558A(05/06)

Features

•International standard package

•Low VCE(sat)

- for minimum on-state conduction

losses

•MOS Gate turn-on

- drive simplicity

Applications

•PDP Screen Drivers

IXGQ170N30PB VCES = 300 V

ICP = 360 A

VCE(sat) ≤≤

≤≤

≤ 1.70 V

TO-3P

G = Gate C = Collector

E = Emitter TAB = Collector

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified) Min. Typ. Max.

VGE(th) IC = 1 mA, VCE = VGE 3.0 5.0 V

ICES VCE = 300 V 1 μA

VGE = 0 V TJ = 125°C 200 μA

IGES VCE = 0 V, VGE = ±20 V ±100 n A

VCE(sat) VGE = 15V, IC = 85 A 1.32 1.70 V

Note 1 TJ = 125 °C 1.36 V

IC = 170 A 1.73 V

TJ = 125°C 1.89 V

(TAB)

GCE

Preliminary Technical Information

IXYS reserves the right to change limits, test conditions and dimensions.

IXGQ170N30PB

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified) Min. Typ. Max.

gfs IC = 85 A, VCE = 10 V 50 80 S

Cies 5140 pF

Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 315 pF

Cres 83 pF

Qg143 nC

Qge IC = 85 A, VGE = 15 V, VCE = 0.5 VCES 26 nC

Qgc 60 nC

td(on) 24 ns

tri 71 ns

td(off) 100 ns

tfi 82 ns

td(on) 22 ns

tri 81 ns

td(off) 102 ns

tfi 157 ns

RthJC 0.375 K/W

RthCS 0.21 K/W

Resistive load, TJ = 125°C

IC = 85 A, VGE = 15 V

VCE = 240 V, RG = 2.4 Ω

Resistive load, TJ = 25°C

IC =85 A, VGE = 15 V

VCE = 240 V, RG = 2.4 Ω

Note 1: Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585

one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2

TO-3P (IXTQ) Outline

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from data gathered during objective characterizations of preliminary engineering lots; but

also may yet contain some information supplied during a pre-production design evaluation. IXYS

reserves the right to change limits, test conditions, and dimensions without notice.

Fig. 1. Output Characteristics

@ 25ºC

0

40

80

120

160

200

240

0 0.4 0.8 1.2 1.6 2 2.4 2.8

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

7V

9V

Fig. 2. Exteded Output Characteristics

@ 25ºC

0

50

100

150

200

250

300

350

01234567

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

13V

11V

7V

9V

Fig. 3. Output Characteristics

@ 125ºC

0

40

80

120

160

200

240

0 0.4 0.8 1.2 1.6 2 2.4 2.8

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

7V

9V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.7

0.9

1.1

1.3

1.5

1.7

1.9

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 250A

I

C

= 170A

I

C

= 50A

I

C

= 85A

Fig. 5. Collec tor-to-Em itter Voltage

vs . G a te-to-E mitter Vo lta ge

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

6 7 8 9 10 11 12 13 14 15

V

GE

- Volts

V

CE

- Volts

I

C

= 250A

170A

85A

50A

T

J

= 25ºC

Fig. 6. Input Adm ittance

0

20

40

60

80

100

120

140

160

180

200

220

4.5 5 5.5 6 6.5 7 7.5 8 8.5 9

V

GE

- Volts

I

C

-

Amperes

T

J

= 125ºC

25ºC

- 40ºC

IXGQ170N30PB

IXYS reserves the right to change limits, test conditions and dimensions.

IXGQ170N30PB

Fig. 7. Transconductance

0

10

20

30

40

50

60

70

80

90

100

110

0 30 60 90 120 150 180 210 240

I

C

- Amperes

g

f s

-

Siemens

T

J

= - 40ºC

25ºC

125ºC

Fig. 9. Re sistive Turn-on Rise Tim e

vs. Collector C urrent

70

72

74

76

78

80

82

84

86

88

80 90 100 110 120 130 140 150 160 170

I

C

- Amperes

t

r - Nanoseconds

R

G

= 2.4Ω

V

GE

= 15V

V

CE

= 240V T

J

= 125ºC

T

J

= 25ºC

Fig. 10. Resistive Turn-on Switching Times

vs. Gate Resistance

75

80

85

90

95

100

105

110

115

2345678910

R

G

- Ohms

t

r

- Nanoseconds

22

23

24

25

26

27

28

29

30

t

d ( o n ) - Nanoseconds

t

r

t

d(on)

- - - -

T

J

= 125ºC, V

GE

= 15V

V

CE

= 240V I

C

= 170A

I

C

= 85A

Fig. 11. Resistive Turn-off Switching Times

v s. Junction Tem perature

70

80

90

100

110

120

130

140

150

160

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f - Nanoseconds

92.0

93.5

95.0

96.5

98.0

99.5

101.0

102.5

104.0

105.5

t

d ( o f f )

- Nanosecond s

t

f

t

d(off)

- - - -

R

G

= 2.4Ω, V

GE

= 15V

V

CE

= 240V

I

C

= 85A

I

C

= 170A

Fig. 12. Resistiv e Turn-off Switching Times

vs. Collector C urrent

60

70

80

90

100

110

120

130

140

150

160

80 90 100 110 120 130 140 150 160 170

I

C

- Amperes

t

f

- Nanoseconds

93

94

95

96

97

98

99

100

101

102

103

t

d ( o f f ) - Nanosecond

s

t

f

t

d(off)

- - - -

R

G

= 2.4Ω, V

GE

= 15V

V

CE

= 240V

T

J

= 125ºC

T

J

= 25ºC

Fig. 8. Re sistive Turn-on Ris e Time

vs. Junction Tem perature

60

80

100

120

140

160

180

200

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

r - Nanoseconds

R

G

= 2.4Ω

V

GE

= 15V

V

CE

= 240V I

C

= 170A

I

C

= 85A

Fig. 13. Resistive Turn-off Switching Tim es

v s. Gate Resistance

120

125

130

135

140

145

150

155

160

165

170

2345678910

R

G

- Ohms

t

f

- N anoseconds

90

100

110

120

130

140

150

160

170

180

190

t d ( o f f )

- Nanosecond

s

t

f

t

d(off) - - - -

TJ = 125ºC, VGE = 15V

VCE = 240V

I C = 85A

I C = 170A

Fig. 14. Gate Charge

0

2

4

6

8

10

12

14

16

0 153045607590105120135150

Q

G

- NanoCoulombs

V

GE

- Volts

VCE

= 150V

I C = 85A

I G = 10 mA

Fig. 15. Reve rse-Bias Safe Operating Area

0

20

40

60

80

100

120

140

160

180

200

50 75 100 125 150 175 200 225 250 275 300 325

V

CE

- Volts

I

C

- Amperes

TJ

= 150ºC

RG = 20Ω

dV / dT < 10V / ns

Fig. 16. Ca pacitance

10

100

1,000

10,000

0 5 10 15 20 25 30 35 40

V

CE

- Volts

Capacit ance - Pi coFar ads

f

= 1 MHz

Cies

Coes

Cres

Fig. 17. Maximum Transient Thermal Resistance

0.01

0.10

1.00

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

R

(th)JC

- ºC / W

IXGQ170N30PB