Preliminary Technical Information PolarTM High Speed = 300 V VCES = 360 A ICP VCE(sat) 1.70 V IXGQ170N30PB IGBT for PDP Applications Symbol Test Conditions VCES TJ = 25C to 150C Maximum Ratings VGEM TO-3P 300 V 30 V IC25 TC = 25C, IGBT chip capability 170 A ICP TJ 150C, tp < 10 s 360 A IC(RMS) Lead current limit 75 A SSOA VGE = 15 V, TVJ = 150C, RG = 20 ICM = 170 A (RBSOA) Clamped inductive load, VCE < 300 V PC TC = 25C 330 W -55 ... +150 150 -55 ... +150 C C C 300 C TSOLD Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum plastic body temperature for 10 s. 260 C Md Mounting torque 1.13/10 Nm/lb.in. Weight 5.5 Symbol Test Conditions (TJ = 25C unless otherwise specified) VGE(th) IC = 1 mA, VCE = VGE ICES VCE = 300 V VGE = 0 V IGES VCE = 0 V, VGE = 20 V VCE(sat) VGE = 15V, Note 1 E G = Gate E = Emitter (TAB) C = Collector TAB = Collector * International standard package * Low VCE(sat) * - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Applications * PDP Screen Drivers g Characteristic Values Min. Typ. Max. 3.0 5.0 V 1 A 200 A TJ = 125C 100 nA IC = 85 A TJ = 125C IC = 170 A TJ = 125C (c) 2006 IXYS All rights reserved C Features TJ TJM Tstg TL G 1.32 1.70 V 1.36 V 1.73 V 1.89 V DS99558A(05/06) IXGQ170N30PB Symbol Test Conditions (TJ = 25C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. IC = 85 A, VCE = 10 V 50 80 S 5140 pF 315 pF Cres 83 pF Qg 143 nC 26 nC 60 nC 24 ns 71 ns 100 ns tfi 82 ns td(on) 22 ns 81 ns 102 ns 157 ns Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 85 A, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri td(off) tri td(off) tfi Resistive load, TJ = 25C IC =85 A, VGE = 15 V VCE = 240 V, RG = 2.4 Resistive load, TJ = 125C IC = 85 A, VGE = 15 V VCE = 240 V, RG = 2.4 RthJC TO-3P (IXTQ) Outline 0.375 K/W RthCS 0.21 K/W Note 1: Pulse test, t 300 s, duty cycle 2 % PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXGQ170N30PB Fig. 1. Output Characteristics @ 25C Fig. 2. Exteded Output Characteristics @ 25C 240 350 V GE = 15V 13V 11V 200 V GE = 15V 13V 11V 300 120 I C - Amperes I C - Amperes 250 160 9V 200 9V 150 80 100 40 7V 50 7V 0 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 0 1 2 3 Fig. 3. Output Characteristics @ 125C 5 6 7 Fig. 4. Dependence of VCE(sat) on Junction Temperature 240 1.9 V GE = 15V 13V 11V V GE = 15V 1.7 V CE(sat) - Normalized 200 I C - Amperes 4 V CE - Volts V CE - Volts 160 120 9V 80 7V I C = 250A 1.5 1.3 I C = 170A 1.1 40 0.9 0 0.7 I C = 85A I C = 50A 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -50 -25 0 25 50 75 100 125 150 T J - Degrees Centigrade V CE - Volts Fig. 5. Collector-to-Emitter Voltage v s. Gate-to-Emitter Voltage Fig. 6. Input Admittance 220 5.0 TJ = 25C 4.5 200 180 160 I C = 250A 170A 85A 50A 3.5 IC - Amperes V CE - Volts 4.0 3.0 2.5 140 TJ = 125C 25C - 40C 120 100 80 60 2.0 40 1.5 20 1.0 0 6 7 8 9 10 11 V GE - Volts (c) 2006 IXYS All rights reserved 12 13 14 15 4.5 5 5.5 6 6.5 7 V GE - Volts 7.5 8 8.5 9 IXGQ170N30PB Fig. 8. Resistiv e Turn-on Rise Time v s. Junction Temperature Fig. 7. Transconductance 110 200 100 RG = 2.4 V GE = 15V 80 V CE = 240V t r - Nanoseconds g f s - Siemens 180 90 70 60 TJ = - 40C 25C 125C 50 40 160 I C = 170A 140 120 100 30 20 I C = 85A 80 10 0 60 0 30 60 90 120 150 180 210 240 25 35 45 I C - Amperes 75 85 95 105 115 115 30 110 V GE = 15V TJ = 125C, V GE = 15V TJ = 125C t r - Nanoseconds 78 76 100 27 95 26 90 25 85 24 74 TJ = 25C 72 I C = 85A 80 70 23 75 80 90 100 110 120 130 140 150 160 22 2 170 3 4 I C - Amperes 160 160 104.0 150 102.5 140 98.0 100 96.5 90 95.0 I C = 170A 80 70 45 55 65 75 85 10 103 td(off) - - - - 95 RG = 2.4 , V GE = 15V V CE = 240V 130 102 101 100 TJ = 125C 120 99 110 98 100 97 90 96 TJ = 25C 80 93.5 70 92.0 105 115 125 60 95 94 80 T J - Degrees Centigrade IXYS reserves the right to change limits, test conditions and dimensions. 90 100 110 120 130 I C - Amperes 140 150 160 93 170 - Nanoseconds 110 - Nanoseconds 99.5 I C = 85A 35 9 d(off) 101.0 d(off) 130 25 8 t 105.5 t V CE = 240V 120 7 tf td(off) - - - - RG = 2.4 , V GE = 15V 140 6 Fig. 12. Resistiv e Turn-off Switching Times v s. Collector Current t f - Nanoseconds 150 5 R G - Ohms Fig. 11. Resistiv e Turn-off Switching Times v s. Junction Temperature tf - Nanoseconds 80 28 d(on) 105 82 29 I C = 170A V CE = 240V t V CE = 240V 84 td(on) - - - - tr RG = 2.4 86 125 Fig. 10. Resistiv e Turn-on Switching Times v s. Gate Resistance 88 t r - Nanoseconds 65 T J - Degrees Centigrade Fig. 9. Resistiv e Turn-on Rise Time v s. Collector Current t f - Nanoseconds 55 IXGQ170N30PB Fig. 13. Resistiv e Turn-off Switching Times v s. Gate Resistance Fig. 14. Gate Charge 170 td(off) - - - 180 TJ = 125C, V GE = 15V 170 160 I C = 85A 150 145 140 140 130 135 120 130 110 - Nanoseconds 150 90 2 3 4 5 6 7 8 9 8 6 2 100 120 10 4 I C = 170A 125 I G = 10 mA 12 d(off) 155 I C = 85A t V CE = 240V 160 V CE = 150V 14 V GE - Volts tf 165 t f - Nanoseconds 16 190 0 0 10 15 30 45 R G - Ohms 60 75 90 105 120 135 150 Q G - NanoCoulombs Fig. 15. Rev erse-Bias Safe Operating Area Fig. 16. Capacitance 200 10,000 180 C ies Capacitance - PicoFarads 160 I C - Amperes 140 120 100 80 60 TJ = 150C 40 1,000 C oes 100 C res RG = 20 dV / dT < 10V / ns 20 f = 1 MHz 10 0 50 75 100 125 150 175 200 225 250 275 300 325 0 5 10 15 20 25 30 35 40 V CE - Volts V CE - Volts Fig. 17. Maximum Transient Thermal Resistance R (th)JC - C / W 1.00 0.10 0.01 0.0001 0.001 0.01 Pulse W idth - Seconds (c) 2006 IXYS All rights reserved 0.1 1 10