MJ802
2 Motorola Bipolar Power Transistor Device Data
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ELECTRICAL CHARACTERISTICS (TC = 25
_
C unless otherwise noted)
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Collector–Emitter Breakdown Voltage(1) (IC = 200 mAdc, RBE = 100 Ohms)
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Collector–Emitter Sustaining Voltage(1) (IC = 200 mAdc)
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Collector–Base Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TC = 150
_
C)
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Emitter–Base Cutoff Current (VBE = 4.0 Vdc, IC = 0)
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DC Current Gain(1) (IC = 7.5 Adc, VCE = 2.0 Vdc)
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Base–Emitter “On” Voltage (IC = 7.5 Adc, VCE = 2.0 Vdc)
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Collector–Emitter Saturation Voltage (IC = 7.5 Adc, IB = 0.75 Adc)
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Base–Emitter Saturation Voltage (IC = 7.5 Adc, IB = 0.75 Adc)
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Current Gain — Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
MHz
(1)Pulse Test: Pulse Width
v
300 µs, Duty Cycle
v
2.0%.
hFE, NORMALIZED CURRENT GAIN
IC, COLLECTOR CURRENT (AMP)
TJ = 175
°
C
3.0
IC, COLLECTOR CURRENT (AMP)
1.0
2.0
0.7
1.0
0.5
0.1
Figure 2. DC Current Gain Figure 3. ‘‘On” Voltages
VBE(sat) @ IC/IB = 10
VCE = 2.0 V
25
°
C
– 55
°
C
TJ = 25
°
C
0.03 0.1 0.2 0.3 0.5 10 20 30
“ON” VOLTAGE (VOLTS)
0.3
0.2
0.05 2.0 3.0 5.0
DATA SHOWN IS OBTAINED FROM PULSE TESTS
AND ADJUSTED TO NULLIFY EFFECT OF ICBO.
2.0
1.8
1.4
1.6
1.2
0
1.0
0.8
0.6
0.4
0.2
1.00.03 0.1 0.2 0.3 0.5 10 20 300.05 2.0 3.0 5.0
VBE @ VCE = 2.0 V
VCE(sat) @ IC/IB = 10
IC, COLLECTOR CURRENT (AMP)
50
1.0 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5.0 20
10
1.0
0.2
10
Figure 4. Active Region Safe Operating Area
100
5.0
2.0
0.5
0.1
20
2.0 3.0 1005030
SECONDARY BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATIONS TC = 25
°
C
PULSE DUTY CYCLE
≤
10%
TJ = 200
°
C
100
µ
s1.0 ms
5.0 ms
dc
The Safe Operating Area Curves indicate IC – VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the
applicable Safe Area to avoid causing a catastrophic failure.
To insure operation below the maximum TJ, power tempera-
ture derating must be observed for both steady state and
pulse power conditions.