Silicon Transistors Type Case S = | Maximum Ratings at 25C amb. Characteristics SPECIAL No. 3 8 FEATURES bo 53 hee ty Veesan e a ~~ Am ot 7 Ves} Voce} Ves | te | Prot le Min. | Max. | Ie j Min. le Is Max. Vv Vv Vv A Ww mA mA |Mc/s} mA mA Vv NPN High 2N915 TO18 P 70} 50 5| 010 | 036] 10 | 50 | 200 | 10 | 250] 10 1 | 4-0 Frequency 2N916 TO18 PE 45 25 5 | 0-10 | 0-36 10 50 200 10 300 10 1 05 Amplifiers 2N918 TOT2 PE 30 15 3 | 0-05 | 02 3 20 _- :4 600 10 1 0-4 2N2865 TO72 PE 25 13 3 | 0:05 | 0-2 4 20* | 200* 4 600 10 1 0-4 28102 TO18 P 60 45 6 | 0-05 | 0-40 5 20* 50* 5 150 10 20 1:0 28103 TO18 P 60 45 6 | 0-05 | 0-40 5 40* | 100* 5 150 10 20 10 28104 TO18 P 60 45 6 | 0-05 | 0-40 5 80* | 200* 5 150 10 2-0 10 28731 TO18 P 30 30 45 | 0:05 | 0:40 5 20* 50* 5 | 30:0 10 20 1-0 28732 TO18 P 30 30} 4:5 | 0-05 | 0-40 5 40* | 100* 5 | 30-0 10 2-0 10 28733 TO18 P 30 30 45 | 0-05 | 0-40 5 80* | 200* 5 | 300 10 20 1-0 TIS18 Silect P 25 13 3 | 0:03 | 0-20 | 10 20 - 10 600 _ - _ 2N3983 Silect P 30 12 3 | 0-03 | 0-20 4 30 _ 4 500 _ _ - (T1407) 2N3984 Silect P 30 12 3 | 0-03 | 0-20 4 20 _ 4 400 _ _ _ (T1408) 2N3985 Silect P 30 12 3] 0-03 | 0-20 4 20 _ 4 300 - - (T1409) 2N3825 Silect PE 30 15 4 | 0-10 | 0-25 2 20 - 2 200 2 0-2 0-25 2N3826 Silect P 60 45 4] 0-03 | 0-20] 10 40 160 10 200 - - _ 2N3827 Silect P 60 45 4] 0-03 | 0-20) 10 100 400 10 200 _- - - 2N4254 Silect PE 30 18 4] 0-05 | 0-20 2 50 _ 2 600 _ 2N4255 Silect PE 30 18 4] 0-05 | 0:20 2 30 150 2 600 _ _ - BF224 Silect PE 45 30 4] 0-05 | 0:36 7 30 1:0 | 300 10 1-0 0-25 | 12e 0-23 pf Typ. BF225 Silect PE 50 40 4] 0-05 | 0:36 4 30 _ 40 | 400 - - _ A.G.C. DEVICE NPN UHF 2N3570 TQ72 PE 30 15 3 | 0-05 | 0:20 5 20 150 5 | 1500 = - _ N.F.< 7dB at 1000 Mc/s Amplifiers 2N3571 TO72 PE 25 15 3 | 0-05 | 0:20 5 20 200 5 | 1200 - - _ N.F.< 4dB at 400 Mc/s 2N3572 TO72 PE 25 13 3 | 0-05 | 0:20 5 20 300 5 | 1000 _- - _ N.F.< 6dB at 400 Mc/s PNP High Frequency TIS37 Silect P 35 | 32 6 | 0-05 | 0-20 -1 45 _ -1 80 - - - Amplifiers TIS38 Silect P 35 | 32 4] 0-05 |} 0-20 -1 25 _ -1 50 _ _ _ NPN High 2N2217 TOS PE 60 30 5 | 08 0-8 150 20 60 20 250 150 15 0-4 Frequency 2N2218 TOS PE 60 30 5] 08 0-8 150 40 | 120 20 250 150 15 0-4 Medium 2N2219 TOS PE 60 30 5] 08 0-8 150 100 | 300 20 250 150 15 0-4 Power 2N2220 TO18 PE 60 30 5] 08 0-5 150 20 60 20 250 150 15 0-4 2N2221 TO18 PE 60 30 5 | 08 0-5 150 40 120 20 250 150 15 0-4 2N2222 TO18 PE 60 30 5 | 08 0-5 150 100 300 20 250 150 15 0-4 2N2537 TOS PE 60 30 5 | 08 0-8 150 50 150 20 250 150 15 0:45 2N2538 TO5 PE 60 30 5] 08 08 150 100 300 20 250 150 15 0-45 Total switching time 2N2539 TO18 PE 60 30 5] 08 0-5 150 50 150 20 250 150 15 0-45 <80nS at 150 mA 2N2540 TO PE 60 30 5] 08 0-5 150 100 300 20 250 150 15 0-45 2N2883 TOS PE 40 20 4 | 03 0-8 100 20 _- 50 400 100 10 0-5 Po >0:5 W at 500 Mc 2N2884 TOS PE 40 20 4| 03 08 100 20 _ 50 400 100 10 0-5 Po >0-75 W at 500 Mc 2N3704 Silect PE 50 30 5 | 0-8 0-36 50 | 100 300 50 100 100 5 0-6 2N3705 Silect PE 50 30 5] 08 | 0:36 50 50 150 50 100 100 5 0-8 2N3706 Silect PE 40 20 5 | 08 0-36 50 30 600 50 100 100 5 1-0 NOTE 1: The following symbols have been used throughout the Product Summary: Under Construction: Under hee: Under fr: Under Dissipation: A Alloyed * hte o fhid + disSipation at Tcase = 25C D Diffused A fhte E Epitaxial t typical G Grown M Mesa 10 P Planar