NDS355AN | FAIRCHILD SEMICONDUCTOR m NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description SuperSOT-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and _ other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package. January 1997 Features LTA, 30V, Rogoy = 0-125 D2 @ Vag = 4.5 V Rosom =0-088Q @V gi10V. = Industry standard outline SOT-23 surface mount package using proprietary SuperSOT-3 design for superior thermal and electrical capabilities. * High density cell design for extremely low Freon. = Exceptional on-resistance and maximum DC current capability. = Compact industry standard SOT-23 surface mount package. SuperSOT-3 G Absolute Maximum Ratings _1, = 25C unless otherwise noted - / \ Symbol | Parameter NDS355AN Units Voss Drain-Source Voltage 30 V Voss Gate-Source Voltage - Continuous +20 Vv I Maximum Drain Current - Continuous (Note 1a) 1.7 A - Pulsed 10 P, Maximum Power Dissipation (Note 1a) 0.5 Ww (Note 1b} 0.46 T,.Tsrq | Operating and Storage Temperature Range -55 to 150 C THERMAL CHARACTERISTICS Rosa Thermal Resistance, Junction-to-Ambient (Note 1a) 250 CW Rac Thermal Resistance, Junction-to-Case (Note 1) 75 C/W 3-122 NDS355AN Rev.CElectrical Characteristics (1, = 25C unless otherwise noted) Symbo! | Parameter Conditions | Min L Typ [ Max | Units OFF CHARACTERISTICS BV ogg Drain-Source Breakdown Voltage Veg = 9 V, |= 250 YA 30 Vv loss Zero Gate Voltage Drain Current Vog = 24 V, Vgg= OV 1 HA [ T, =125C 10 | pA loser Gate - Body Leakage, Forward Veg = 20 V5, = 0V 100 nA lassr Gate - Body Leakage, Reverse Vog = 720 V, Vo5 = 0 V -100 nA ON CHARACTERISTICS (note 2) Vesa Gate Threshold Voltage Vos = Vas: |p = 250 pA 1 1.6 2 v | T, =125C 0.5 1.2 1.5 Rosiom Static Drain-Source On-Resistance Vog = 4.5V,1,=1.7A 0.105 | 0.125 Q [ 1, 125C 0.16 | 0.23 Veg = 10V, 1, = 1.9A 0.065 | 0.085 Levon On-State Drain Current Veg = 4.5 V, Vog = 5 V 6 A Ors Forward Transconductance Vog = 9 V, I= 1.7A 3.5 s DYNAMIC CHARACTERISTICS C., [input Capacitance Vos = 15 V, Veg = 0V, 195 pF Cos Output Capacitance 1 = 1.0 MHz ) 135. | pF C... Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (note 2) toon Turn - On Delay Time Vop = 10V,1,= 174, 10 20 ns t Turn - On Rise Time Vos = 10V, RAoen= 6 22 13 25 ns tot Turn - Off Delay Time 13 25 ns t Turn - Off Fall Time 4 10 ns bom Tum - On Delay Time Vo HSVID= TA, 10 20 ns t, Turn - On Rise Time Vog = 4.5 V, Roen= 6 O 32 60 ns taiotn Tur - Off Delay Time 10 20 ns t Turn - Off Fall Time 5 10 ns Q, Total Gate Charge Vog = 10V, 1, = 1.74, 3.5 5 nc Q,, Gate-Source Charge Ves = 5V 0.8 nc Q Gate-Drain Charge 1.7 nc 3-123 NOS355AN Rev.C NVSSESGN 48 pFNDS355AN Electrical Characteristics (1, = 25C unless otherwise noted) Symbol | Parameter Conditions | Min | Typ | Max Units DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS l, Maximum Continuous Drain-Source Diode Forward Current 0.42 A ley, Maximum Pulsed Drain-Source Diode Forward Current 10 A Vsp Drain-Source Diode Forward Voltage Vos = OV, 1,=0.42 A (note 2) 0.8 1.2 V Notes: 1. R,, is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R,,,, is guaranteed by design while A,,.., is determined by the user's board design. TrTa Tra P = 74.4 xR, Po = 526 = Raton = '0O * Rosomer, Typical R,,, using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: a. 250C/W when mounted an a 0.02 in pad of 202 copper. b. 270C/W when mounted on a 0.001 in? pad of 20z copper. ta Scale t : 1 on letter size paper 2. Pulse Test: Pulse Width < 300us, Duty Cygle < 2.0%. 3-124 NDS355AN Rev.CTypical Electrical Characteristics - a @ s Ip , DRAIN-SOURCE CURRENT (A) N Qo 0.5 1 15 2 25 Vpg: DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics . ny & o Vas= 3.5V DRAIN-R ps(on), NORMALIZEDYCE $82 .4.8 & 2 B 2 4 6 8 iy , DRAIN CURRENT {A} Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 16 1 7 2 iD =1.6A LL w & Vos = 4.5V gis gz! oz Nb u in 16 Zz 8 | zy, z 12 A 3 o' 26 6 O42 Qe 1+- em 1 28 #3 * 2 oe LA & Jos gt < 5 a To8 06 0.4 -50 25 Q 25 50 76 100 125 150 0 1 2 3 4 5 y , JUNCTION TEMPERATURE (C) Ip, DRAIN CURRENT (A) Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with Temperature. with Drain Current and Temperature . T 12 Vog = 5.0V 8 Bat Vos= Ves 2 of i Ip = 250pA E NO ,: 5 23 c Zi x ff 26 5 zw 3 oacog zr Z 4 Su a T =-55C JL / #8 oa a J ) 2 * 5 - Cr G07 125C & L | 0.6 16 2 25 3 35 4 50 -25 0 26 50 75 100 125 150 Vgg GATE TO SOURCE VOLTAGE (V) T, ,JUNCTION TEMPERATURE (C) Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with Temperature. NDS355AN Rev.C 3-125 NVSSESAGNNDS355AN Typical Electrical Characteristics (continued) | 8 \ _ l o.g2 foteke -50 25 QO 25 50 75 100 126 150 T, , JUNCTION TEMPERATURE (C) BVpss , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE : g 1 5 \ Figure 7. Breakdown Voltage Variation with Temperature. a o a wo 2 6 Ny S 6 CAPACITANCE (pF) 3 a 60 40 Crss 20 0.1 0.2 0. 1 2 5 10 20 30 Vos , DRAIN TO SOURCE VOLTAGE (V) Figure 9. Capacitance Characteristics. Vop oY VIN R, N f oa D Vout Vas R Hi FD) on $e \ } O* VV an NY Figure 11. Switching Test Circuit. 1 Ty= 125C 0.01 9.001 tg , REVERSE DRAIN CURRENT (A) 0.0001 0 0.2 0.4 06 OB 1 12 Vgy . BODY DIODE FORWARD VOLTAGE (V) Figure 8. Body Diode Forward Voltage Variation with Source Current and Temperature. 10 = Ww Gg 5 Oo > Ww QO ac 2 Oo a 1) E < e an oO > Q 2 4 6 8 Q , GATE CHARGE (nC) Figure 10. Gate Charge Characteristics. ton mi t aon) aot, taotty | OUT {NVERTED 90% Vin 50% * PULSE WIDTH Figure 12. Switching Wavetorms. 3-126 NDS3S5AN Rev.CTypical Electrical Characteristics (continued) _? 30 g Ving = 5.0V z 3 6 Ps 10 2s = 3 z c 4 a4 z 3 3 3 Z 03 6 g 2 2 oO Vas = 4.5V Z 2 SINGLE PULSE e 1 0.03 Faia =See Note1b = 25C a 0 - - 0.01 0 2 4 6 8 10 01 0.2 0.5 1 2 5 10 20 30 50 Ip , DRAIN CURRENT (A) Vos: DRAI N-SOURCE VOLTAGE (V) Figure 13. Transconductance Variation with Drain Figure 14. Maximum Safe Operating Area. Current and Temperature. = Typo _ z 2 1 g | Eo ~ c & LL E18 a 3 fan a Zz [a T 5 9 [ann en z Cc a S 94.6 = 91. 9 & a 9, 4 = t ja | ; | z . 4.5x5" FR-4 Board a 02 eee a _ 2 Vay Ta = 28C an 5 4.5'x5" FR-4 Board bE Sul Air g Ta = 25C an Vgg = 4.5 : bE | Still Air a oo ~ cee 1.2 - Bee 0 01 0.2 0.3 04 0 01 0.2 0.3 04 20z COPPER MOUNTING PAD AREA (in?) 20z COPPER MOUNTING PAD AREA (in, ) Figue 15. SuperSOT-3 Maximum Figure 16. Maximum Steady-State Drain Steady-State Power Dissipation versus Copper Current versus Copper Mounting Pad Area. Mounting Pad Area. 1 05 D= 0.2 0.2 Raga (t) = r(t} * Rava : R ga= See Note 1b 0.1 0.1 = 4 tos [~ _ 0.05 = ' i 0.05 = P(pk) | 0.02 7 9:0? WV) a _ she 0.01 ipo 1(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.01 = 0.005 Single Pulse - : Ty-Ta =P * Regatt) . Duty Cycle, D = ti Ag 0.002 0.001 * 0.0001 0.001 0.01 0.1 1 10 100 300 44, TIME (sec) Figure 17. Transient Thermal Response Curve. Note : Characterization performed using the conditions described in note 1b. Transient thermal response will change depending on the circuit board design. 3-4 27 NDS355AN Rev.C z 0 A) o a > =