VISHAY
ZPY1 to ZPY110
Document Number 85790
Rev. 3, 13-May-03
Vishay Semiconductors
www.vishay.com
1
17173
Zener Diodes
Features
Silicon Planar Power Zener Diodes
For use in stabilizing and clipping circuits with high
power rating.
The Zener voltages are graded according to the
international E 12 standard. Smaller voltage toler-
ances are available upon request.
These diodes are also available in the MELF case
with the type designation ZMY10 ... ZMY110.
Mechanical Data
Case: DO-41 Glass Case
Weight: approx. 350 mg
Packaging Codes/Options:
D9/5 K per 13 " reel (52 mm tape), 10 K/box
E1/5 K per Ammo mag. (52 mm tape), 10 K/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
1) Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.
Parameter Te st c on d i t io n Symbol Value Unit
Zener current (see Table "Characteristics")
Power dissipation Ptot 1.3 1) W
Parameter Test condition Symbol Value Unit
Thermal resistance junction to ambient air RθJA 130 1) °C/W
Maximum junction temperature Tj175 °C
Storage temperature range TS- 55 to + 175 °C
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Document Number 85790
Rev. 3, 13-May-03
VISHAY
ZPY1 to ZPY110
Vishay Semiconductors
Electrical Characteristics
1) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case
2)Tested with pulses tp = 5 ms
3)The ZPY1 is a silicon diode operated in forward direction. Hence, the index of all characteristics and maximum ratings should be "F"
instead of "Z" Connect the cathode terminal to the negative pole
Partnum
ber
Marking
Code
Zener Voltage
Range
Dynamic
Resistance
Temperature
Coefficient of
Zener Voltage
Te st
Current
Reverse Voltage Admissible Zener
Current
VZ@IZT rzj@IZT1,
f = 1 kHz
TCVZ@IZT IZT VR@IR=0.5 µA, IZ@Tamb = 25 °C,
V10-4/°C mA VmA
min max typ min max
ZPY13) 0.65 0.75 6.5 (< 8) -23 -23 5 - 580
ZPY3.9 3.7 4.1 4 (< 7) -7 2100 -290
ZPY4.3 4.0 4.6 4 (< 7) -7 3100 -260
ZPY4.7 4.4 5.0 4 (< 7) -7 4100 -235
ZPY5.1 4.8 5.4 2 (< 5) -6 5100 > 0.7 215
ZPY5.6 5.2 6.0 1 (< 2) -3 5100 > 1.5 193
ZPY6.2 5.8 6.6 1 (< 2) -1 6100 > 2.0 183
ZPY6.8 6.4 7.2 1 (< 2) 0 7 100 > 3.0 157
ZPY7.5 7.0 7.9 1 (< 2) 0 7 100 > 5.0 143
ZPY8.2 7.7 8.7 1 (< 2) 3 8 100 > 6.0 127
ZPY9.1 8.5 9.6 2 (< 4) 3 8 50 > 7.0 117
ZPY10 9.41 10.6 2 (< 4) 5 9 50 > 7.5 105
ZPY11 10.4 11.6 3 (< 7) 510 50 > 8.5 94
ZPY12 11.4 12.7 3 (< 7) 510 50 > 9.0 85
ZPY13 12.4 14.1 4 (< 9) 510 50 > 10 78
ZPY15 13.8 15.8 4 (< 9) 510 50 > 11 70
ZPY16 15.3 17.1 5 (< 10) 711 25 > 12 63
ZPY18 16.8 19.1 5 (< 11) 711 25 > 14 57
ZPY20 18.8 21.2 6 (< 12) 711 25 > 15 52
ZPY22 20.8 23.3 7 (< 13) 711 25 > 17 48
ZPY24 22.8 25.6 8 (< 14) 712 25 > 18 42
ZPY27 25.1 28.9 9 (< 15) 712 25 > 20 38
ZPY30 28 32 10 (< 20) 712 25 > 22.5 35
ZPY33 31 35 11 (< 20) 712 25 > 25 31
ZPY36 34 38 25 (< 60) 712 10 > 27 29
ZPY39 37 41 30 (< 60) 812 10 > 29 26
ZPY43 40 46 35 (< 80) 813 10 > 32 24
ZPY47 44 50 40 (< 80) 813 10 > 35 22
ZPY51 48 54 45 (< 100) 813 10 > 38 20
ZPY56 52 60 50 (< 100) 813 10 > 42 18
ZPY62 58 66 60 (< 130) 813 10 > 47 16
ZPY68 64 72 65 (< 130) 813 10 > 51 14
ZPY75 70 79 70 (< 160) 813 10 > 56 13
ZPY82 77 88 80 (< 160) 813 10 > 61 12
ZPY91 85 96 120 (< 250) 913 5> 68 11
ZPY100 94 106 130 (< 250) 913 5> 75 10
ZPY110 104 116 150 (< 250) 913 5> 85 9
VISHAY
ZPY1 to ZPY110
Document Number 85790
Rev. 3, 13-May-03
Vishay Semiconductors
www.vishay.com
3
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Figure 1. Admissible Power Dissipation vs. Ambient Temperature
Figure 2. Pulse Thermal Resistance vs. Pulse Duration
Figure 3. Dynamic Resistance vs. Zener Current
gzpy1_04
gzpy1_05
gzpy1_06
Figure 4. Dynamic Resistance vs. Zener Current
Figure 5. Dynamic Resistance vs. Zener Current
Figure 6. Thermal Resistance vs. Lead Length
gzpy1_07
gzpy1_08
gzpy1_09
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Document Number 85790
Rev. 3, 13-May-03
VISHAY
ZPY1 to ZPY110
Vishay Semiconductors
gzpy1_01
Figure 7. Breakdown Characteristics
gzpy1_02
Figure 8. Breakdown Characteristics
VISHAY
ZPY1 to ZPY110
Document Number 85790
Rev. 3, 13-May-03
Vishay Semiconductors
www.vishay.com
5
Package Dimensions in Inches (mm)
gzpy1_03
Figure 9. Breakdown Characteristics
min. 1.102 (28.0)min. 1.102 (28.0)
max. .161 (4.1)
max.
Cathode
0.034 (0.86)
Mark
max. 0.102 (2.6)
17174
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Document Number 85790
Rev. 3, 13-May-03
VISHAY
ZPY1 to ZPY110
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423