ZPY1 to ZPY110 VISHAY Vishay Semiconductors Zener Diodes Features * Silicon Planar Power Zener Diodes * For use in stabilizing and clipping circuits with high power rating. * The Zener voltages are graded according to the international E 12 standard. Smaller voltage tolerances are available upon request. * These diodes are also available in the MELF case with the type designation ZMY10 ... ZMY110. 17173 Mechanical Data Case: DO-41 Glass Case Weight: approx. 350 mg Packaging Codes/Options: D9/5 K per 13 " reel (52 mm tape), 10 K/box E1/5 K per Ammo mag. (52 mm tape), 10 K/box Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Test condition Symbol Value Unit Ptot 1.3 1) W Zener current (see Table "Characteristics") Power dissipation 1) Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature. Maximum Thermal Resistance Tamb = 25 C, unless otherwise specified Parameter Thermal resistance junction to ambient air Test condition Symbol RJA Value 130 1) Unit C/W Maximum junction temperature Tj 175 C Storage temperature range TS - 55 to + 175 C 1) Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature. Document Number 85790 Rev. 3, 13-May-03 www.vishay.com 1 ZPY1 to ZPY110 VISHAY Vishay Semiconductors Electrical Characteristics Partnum ber Marking Code Zener Voltage Range Dynamic Resistance Temperature Coefficient of Zener Voltage Test Current Reverse Voltage Admissible Zener Current VZ@IZT rzj@IZT1, f = 1 kHz TCVZ@IZT IZT VR@IR=0.5 A, IZ @Tamb = 25 C, 10-4/C mA V mA V min max typ min max ZPY13) 0.65 0.75 6.5 (< 8) -23 -23 5 - 580 ZPY3.9 3.7 4.1 4 (< 7) -7 2 100 - 290 ZPY4.3 4.0 4.6 4 (< 7) -7 3 100 - 260 ZPY4.7 4.4 5.0 4 (< 7) -7 4 100 - 235 ZPY5.1 4.8 5.4 2 (< 5) -6 5 100 > 0.7 215 ZPY5.6 5.2 6.0 1 (< 2) -3 5 100 > 1.5 193 ZPY6.2 5.8 6.6 1 (< 2) -1 6 100 > 2.0 183 ZPY6.8 6.4 7.2 1 (< 2) 0 7 100 > 3.0 157 ZPY7.5 7.0 7.9 1 (< 2) 0 7 100 > 5.0 143 ZPY8.2 7.7 8.7 1 (< 2) 3 8 100 > 6.0 127 ZPY9.1 8.5 9.6 2 (< 4) 3 8 50 > 7.0 117 ZPY10 9.41 10.6 2 (< 4) 5 9 50 > 7.5 105 ZPY11 10.4 11.6 3 (< 7) 5 10 50 > 8.5 94 ZPY12 11.4 12.7 3 (< 7) 5 10 50 > 9.0 85 ZPY13 12.4 14.1 4 (< 9) 5 10 50 > 10 78 ZPY15 13.8 15.8 4 (< 9) 5 10 50 > 11 70 ZPY16 15.3 17.1 5 (< 10) 7 11 25 > 12 63 ZPY18 16.8 19.1 5 (< 11) 7 11 25 > 14 57 ZPY20 18.8 21.2 6 (< 12) 7 11 25 > 15 52 ZPY22 20.8 23.3 7 (< 13) 7 11 25 > 17 48 ZPY24 22.8 25.6 8 (< 14) 7 12 25 > 18 42 ZPY27 25.1 28.9 9 (< 15) 7 12 25 > 20 38 ZPY30 28 32 10 (< 20) 7 12 25 > 22.5 35 ZPY33 31 35 11 (< 20) 7 12 25 > 25 31 ZPY36 34 38 25 (< 60) 7 12 10 > 27 29 ZPY39 37 41 30 (< 60) 8 12 10 > 29 26 ZPY43 40 46 35 (< 80) 8 13 10 > 32 24 ZPY47 44 50 40 (< 80) 8 13 10 > 35 22 ZPY51 48 54 45 (< 100) 8 13 10 > 38 20 ZPY56 52 60 50 (< 100) 8 13 10 > 42 18 ZPY62 58 66 60 (< 130) 8 13 10 > 47 16 ZPY68 64 72 65 (< 130) 8 13 10 > 51 14 ZPY75 70 79 70 (< 160) 8 13 10 > 56 13 ZPY82 77 88 80 (< 160) 8 13 10 > 61 12 ZPY91 85 96 120 (< 250) 9 13 5 > 68 11 ZPY100 94 106 130 (< 250) 9 13 5 > 75 10 ZPY110 104 116 150 (< 250) 9 13 5 > 85 9 1) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case 2)Tested with pulses tp = 5 ms 3)The ZPY1 is a silicon diode operated in forward direction. Hence, the index of all characteristics and maximum ratings should be "F" instead of "Z" Connect the cathode terminal to the negative pole www.vishay.com 2 Document Number 85790 Rev. 3, 13-May-03 ZPY1 to ZPY110 VISHAY Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified) gzpy1_07 gzpy1_04 Figure 1. Admissible Power Dissipation vs. Ambient Temperature gzpy1_05 Figure 4. Dynamic Resistance vs. Zener Current gzpy1_08 Figure 2. Pulse Thermal Resistance vs. Pulse Duration gzpy1_06 Figure 3. Dynamic Resistance vs. Zener Current Document Number 85790 Rev. 3, 13-May-03 Figure 5. Dynamic Resistance vs. Zener Current gzpy1_09 Figure 6. Thermal Resistance vs. Lead Length www.vishay.com 3 ZPY1 to ZPY110 VISHAY Vishay Semiconductors gzpy1_01 Figure 7. Breakdown Characteristics gzpy1_02 Figure 8. Breakdown Characteristics www.vishay.com 4 Document Number 85790 Rev. 3, 13-May-03 ZPY1 to ZPY110 VISHAY Vishay Semiconductors gzpy1_03 Figure 9. Breakdown Characteristics max. .161 (4.1) min. 1.102 (28.0) min. 1.102 (28.0) Package Dimensions in Inches (mm) max. 0.102 (2.6) Cathode Mark max. 0.034 (0.86) 17174 Document Number 85790 Rev. 3, 13-May-03 www.vishay.com 5 ZPY1 to ZPY110 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 6 Document Number 85790 Rev. 3, 13-May-03