CQ220-25B
CQ220-25D
CQ220-25M
CQ220-25N
25 AMP TRIAC
200 THRU 800 VOLTS
TO-220 CASE
Central
Semiconductor Corp.
TM
R2 (24-September 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQ220-25B
series type is an Epoxy Molded Silicon Triac
designed for full wave AC control applications
featuring gate triggering in all four (4) quadrants.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL CQ220 CQ220 CQ220 CQ220
-25B -25D -25M -25N UNITS
Peak Repetitive Off-State Voltage VDRM 200 400 600 800 V
RMS On-State Current (TC=90°C) IT(RMS) 25 A
Peak One Cycle Surge (t=8.3ms) ITSM 150 A
I2t Value for Fusing (t=8.3ms) I2t94A
2s
Peak Gate Power (tp=10µs) PGM 40 W
Average Gate Power Dissipation PG (AV) 1.0 W
Peak Gate Current (tp=10µs) IGM 10 A
Peak Gate Voltage (tp=10µs) VGM 16 V
Critical Rate of Rise of On-State Current
Repetitive (f=60Hz) di/dt 10 A/µs
Storage Temperature Tstg -40 to +150 °C
Junction Temperature TJ-40 to +125 °C
Thermal Resistance ΘJA 60 °C/W
Thermal Resistance ΘJC 1.7 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IDRM Rated VDRM 10 µA
IDRM Rated VDRM, TC=125°C 2.0 mA
IGT VD=12V, RL=10Ω, QUAD I, II, III 11.1 30 mA
IGT VD=12V, RL=10Ω, QUAD IV 28.2 60 mA
IHIT=100mA 18.4 50 mA
VGT VD=12V, RL=10Ω, QUAD I, II, III 1.03 1.50 V
VGT VD=12V, RL=10Ω, QUAD IV 1.74 2.50 V
VTM ITM=35A, tp=380µs 1.80 V
dv/dt VD=2/3VDRM, RGK=∞, TC=125°C 6.0 V/µs