TIM1213-15L FEATURES : M LOW INTERMODULATION DISTORTION M HIGH GAIN IM; = -45 dBc at Po=30.0 dBm, Giga =6.0 dB at 12.7 GHz to 13.2 GHz Single Carrier Level M BROAD BAND INTERNALLY MATCHED M HIGH POWER M HERMETICALLY SEALED PACKAGE Pigg = 42.0dBm at 12.7 GHz to 13.2 GHz RF PERFORMANCE SPECIFICATIONS (Ta = 25C) CHARACTERISTICS SYMBOL CONDITION UNIT MIN. TYP. MAX, Output Power at 1dB Compression Point Pigs cBm 41.0 42.0 ~ Power Gain at 1dB . : Gigs dB 5.0 6.0 _ Compression Point VDS= 9 V. Drain Current ! A ~ . . oS! | f= 12.7-13.2 GHz 3) 3. Gain Flatness AG dB ~ ~ 0.8 Power Added Efficiency Nadd % - 29 - 3rd Order Intermodulation Distortion IMg Note 1 dBc ~ 42 745 ~ Drain Current los2 A - 4.5 5.5 Channel-Temperature Rise ATch Vos X lpg X Rin (Cc) c - - 100 ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL CONDITION UNIT MIN. TYP. MAX. Vos= 3V Transconductance gm log = 4.8 A ms - 3000 - . Vos=3V Pinch-off Voltage Vosott log = 145 mA V 1.5 -3.0 4.5 . Vos=3V Saturated Drain Current loss Veg = 0V A - 10.0 11.5 Gate-Source Breakdown I = Vv - _ - Voltage Veso Gs 145 pA S Thermal Resistance Rh (ce) Channel to Case CW - 2.0 2.5 Note 1: 2 tone Test Pout = 30.0 d8m Single Carrier Level. Recommended Gate Resistance(Rg) : Re = Rgl(50 Q) + Rg2(50 2) = 100 Q (MAX) a a aL a ee a a ene ssaaTIM 1213 = 1 5 cs ABSOLUTE MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL UNIT RATING Drain-Source Vollage Vos Vv 15 Gate-Source Voitage Ves v -5 Drain Current los A 11.5 Total Power Dissipation (Tg = 25C) Py WwW 60 Channel Temperatura Ton Cc 175 Storage Temperature T stg C 65~175 PACKAGE OUTLINE (2-11C1B) R3.0 g Unit in mm S NN @ Gate m N @ Source t. a xf o @ Drain N n m N I I -Z @ @llosso1s |@ S th Oo N 17,0 40,3 | 21,5MAX. 44 MAX. | S < | | | f=] i 1 4 + = [ is bt : yt 2 xl mim <lo o =} + +1 Aint ow oOl- NI HANDLING PRECAUTIONS FOR PACKAGED TYPE Soldering iron should be grounded and the operaling time should nat exceed 10 seconds at 260C.ncn 1M 1213-15. RF PERFORMANCES Output Power vs. Fraquancy Vos = 9V log = 454A Pi, = 36 dBm 43 3 o 42 a. 41 40 12.7 13. 2 Frequency (GHz) Ouiput Power vs. Input Power f = 13. 2GHz Tr Vos = 9V log = 4.5 A 42 |? Lo Po 40 ve) 2 40 a _ 30 38 qadd _ ym x 20 > 36 10 0 28 30 32 34 36 Pi, (dBm)TIM1213-15L POWER DISSIPATION VS. CASE TEMPERATURE 100 80 60 NX Py (W) Y ZL 40 N\ 20 N\ 0 40 80 120 160 200 Te (C) IM3 VS. OUTPUT POWER CHARACTERISTICS Vos = 9 V los S45 A f= 12.95 GHz Af = 5 MHz 30 L 3 Y 3 Z = ~~ 40 -50 | | 60 26 28 30 32 34 Po (dBm), Single CarrierTOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA ne FEATURES : | M LOW INTERMODULATION DISTORTION M HIGH GAIN MICRC WAVE POWER GaAs FET T1M1213-15L IM3 = -45 dBe at Po=30.0 dBm, Gygg 786.0 lB at 12.7 GHz to 13.2 GHz Single Carrier Level M BROAD BAND INTERNALLY MATCHED mM HIGH POWER M HERMETICALLY SEALED PACKAGE Pigs = 42.0 d8m at 12.7 GHz to 13.2 GHz RF PERFORMANCE SPECIFICATIONS (Ta = 25C) CHARACTERISTICS SYMBOL CONDITION UNIT MIN. TYP. MAX, Output Power at 1dB Compression Point Pras Bm 41.0 42.0 7 Power Gain at 1d6 Compression Point Gros VDS= 9 V dB 5.0 6.0 7 Drain ent 1 A - . . rain Curr os! f= 12.7-13.2 GHz 4-5{ 5.5 Gain Flatness AG dB - - 0.8 Power Added Efficiency mcs | % - 29 - 3rd Order intermodulation . Distortion Mg Note 1 Bc ~ 42 ~ 48 - Drain Current lose A = 4.5 5.5 Channel-Temperature Rise ATch Vos * Ips * Rin (Cc) Cc - - 100 ELECTRICAL. CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL CONDITION VINIT MIN. TYP. MAX. Vos2z9V " . Transconductance gm log = 4.8 A ms - 3000 - ' Vos2 3 V Pinch-off Voltage Vesolt log = 145 mA V 1.5 ~3.0 ~4.5 Saturated Drain Current loss vee 3 y A - 10.0 11.5 Gale-Source Breakdown V I = 145 pA Vv ~5 - - Voltage GSO os oe Thermal Resistance Rin (cc) Channel to Case "OW - 2.0 2.5 Note 1: 2 tone Test Pout = 30.0 dBm Single Carrier Level. %* The information contained herein [s presented only as a guide for the applicatlins of our products. No responsibitity is assumed by TOSHIBA for any infringements of patents or other rights of the Jsird parties which may result from its use. No license is granted by implication or otherwise under any patent or patunt rights of TOSHIBA or others. % The information contained hercin may be changed wilhout prior notice. It {s |erefore advisable to contact TOSHIBA befors proceeding with the design of equipment incorporating this product. BE TOSHIBA CORPORATION Se~ TIN1213-18L ABSOLUTE MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL UNIT RATING Drain-Source Voltage Vos Vv 15 Gate-Source Voltage Vas Vv -5 Drain Current los A 11.6 Total Power Dissipation (To = 25C) Py WwW 60 Channel Temperature Toh *C 176 Slorage Tamperature Talg C 65~175 PACKAGE OUTLINE (2-11C1B) R3.0 Z Unit in mm . CI iN . \ @ Gate Lom N @ Source -) a xf $1 @ Drain N n fa wn" N 4 -Z Q@ @itost+ors |@ Pa N ._I2020.3 I 21.5MAX. a4 11.0MAX. s 2 | [= 1 l = i Lt! Q iat aiqi 3 S| + +! Nis, oIl7- HANDLING PRECAUTIONS FOR PACKAGED TYPE Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C.RF PERFORMANCES TIM1213~-15L P, (dBm) Py (dBm) Outpul Power vs. Frequency Vos 9V lps 2 4.5A Pin = 36 dBm 43 42 | 41 40 12.7 13.2 Frequency (GHz) Output Power vs. Input Power f = 13, 2GHz - Vos = 9V ao log ASA be a AT ~~ Po 40 3f i Nadd Lt | 36 28 30 32 34 a6 Pi, (dBm)~ TIM1213-15L POWER DISSIPATION VS. CASE TEMPERATURE 100 80 60 NQ 40 . N 20 NN 0 40 80 120 16(i 200 To (C) IM3 VS. OUTPUT POWER CHARACTERISTICS Vos =9 V log 34.5 A f= 12.95 GHz Sf = 5 MHz 4 - 30 7 Cc B A 2 ve s= 40 ~50 al ~60 26 28 30 32 34 Po (dBm), Single Carrier