2N7002DW
N-Channel MOSFET
Features
• Power Dissipation: 0.2W(Tamb=25ć)
• Drain Current: 115mA
• Drain-source Voltage: 60V
• Operating Junction Temperature: -55 to +150к
• Storage Temperature: -55 to +150к
• Marking: K72
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Typ Max Units
V(BR)DSS Drain-Source Breakdown Voltage*
(VGS=0Vdc, ID=10µAdc) 60 70 --- Vdc
Vth(GS) Gate-Threshold Voltage*
(VDS=VGS, ID=250µAdc) 1.0 1.5 2.0 Vdc
IGSS Gate-body Leakage*
(VDS =0Vdc, VGS =f20Vdc) --- --- f10 nAdc
IDSS Zero Gate Voltage Drain Current*
(VDS =60Vdc, VGS =0Vdc)
(VDS =60Vdc, VGS =0Vdc, Tj=125к)---
--- ---
--- 1
500 µAdc
ID(ON) On-state Drain Current*
(VDS =7.5Vdc, VGS =10Vdc) 0.5 1.0 --- Adc
rDS(on) Drain-Source On-Resistance*
(VGS=5Vdc, ID=50mAdc)
(VGS=10Vdc, ID=500mAdc) ---
--- 3.2
4.4 7.5
13.5 Ω
gFS Forward Transconductance*
(VDS=10Vdc, ID=200mAdc) 80 --- --- ms
Ciss Input Capacitance --- 22 50
COSS Output Capacitance --- 11 25
CrSS Reverse Transfer
Capacitance
VDS=25Vdc,
VGS =0Vdc
f=1MHz --- 2 5 pF
Switching
td(on) Turn-on Time --- 7 20
td(off) Turn-off Time
VDD=30Vdc,
VGEN=10Vdc
RL=150Ω,ID=200mA,
RG=25Ω--- 11 20 ns
* Pulse test, pulse width300s, duty cycle20%
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .006 .014 0.15 0.35
B .045 .053 1.15 1.35
C .085 .096 2.15 2.45
D .026 0.65Nominal
G .047 .055 1.20 1.40
H .071 .087 1.80 2.20
J --- .004 --- 0.10
K .035 .043 0.90 1.10
L .010 .018 0.26 0.46
M .003 .006 0.08 0.15
J
M
A
C
B
G
H
K
DL
DIMENSIONS
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MCC
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Revision: A 2011/01/01
TM
Micro Commercial Components
SOT-363
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MCC
Revision: A 2011/01/01
TM
Micro Commercial Components
www.mccsemi.com
2 of 2
Device Packing
Part Number-TP Tape&Reel: 3Kpcs/Reel
Ordering Information :
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