VS-8ETL06PbF, VS-8ETL06-N3, VS-8ETL06FPPbF, VS-8ETL06FP-N3 www.vishay.com Vishay Semiconductors Ultralow VF Hyperfast Rectifier for Discontinuous Mode PFC, 8 A FRED Pt(R) FEATURES * Hyperfast recovery time * Benchmark ultralow forward voltage drop 2 2 * 175 C operating junction temperature 3 * Low leakage current 3 1 1 TO-220 FULL-PAK TO-220AC * Fully isolated package (VINS = 2500 VRMS) * UL E78996 approved Base cathode 2 Base cathode 2 * Designed and qualified according to JEDEC(R)-JESD 47 Available * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 Cathode 1 Cathode 3 Anode VS-8ETL06PbF VS-8ETL06-N3 3 Anode DESCRIPTION State of the art, ultralow VF, soft-switching hyperfast rectifiers optimized for Discontinuous (Critical) Mode (DCM) Power Factor Correction (PFC). VS-8ETL06FPPbF VS-8ETL06FP-N3 The minimized conduction loss, optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. PRODUCT SUMMARY Package TO-220AC, TO-220FP IF(AV) 8A VR 600 V VF at IF 0.81 V The device is also intended for use as a freewheeling diode in power supplies and other power switching applications. trr typ. 60 ns TJ max. 175 C Diode variation Single die APPLICATIONS AC/DC SMPS 70 W to 400 W e.g. laptop and printer AC adaptors, desktop PC, TV and monitor, games units and DVD AC/DC power supplies. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Repetitive peak reverse voltage TEST CONDITIONS VALUES UNITS 600 V VRRM Average rectified forward current FULL-PAK Non-repetitive peak surge current IF(AV) IFSM Repetitive peak forward current Operating junction and storage temperatures TC = 160 C 8 TC = 142 C TJ = 25 C A 175 IFM 16 TJ, TStg -65 to +175 C ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 8 A - 0.96 1.05 0.86 IR = 100 A IF = 8 A, TJ = 150 C - 0.81 VR = VR rated - 0.05 5 TJ = 150 C, VR = VR rated - 20 100 UNITS V Reverse leakage current IR Junction capacitance CT VR = 600 V - 17 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH A Revision: 15-Nov-16 Document Number: 94028 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8ETL06PbF, VS-8ETL06-N3, VS-8ETL06FPPbF, VS-8ETL06FP-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 C unless otherwise specified) PARAMETER Reverse recovery time SYMBOL trr MIN. TYP. MAX. IF = 1 A, dIF/dt = 100 A/s, VR = 30 V TEST CONDITIONS - 60 100 IF = 8 A, dIF/dt = 100 A/s, VR = 30 V - 150 250 TJ = 25 C - 170 - - 250 - - 15 - - 20 - TJ = 25 C - 1.3 - TJ = 125 C - 2.6 - MIN. TYP. MAX. UNITS -65 - 175 C TJ = 125 C Peak recovery current Reverse recovery charge IRRM Qrr IF = 8 A dIF/dt = 200 A/s VR = 390 V TJ = 25 C TJ = 125 C UNITS ns A C THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range Thermal resistance, junction to case TEST CONDITIONS TJ, TStg (FULL-PAK) RthJC - 1.4 2 - 3.4 4.3 Thermal resistance, junction to ambient per leg RthJA Typical socket mount - - 70 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.5 - - 2.0 - - 0.07 - oz. - 12 (10) kgf * cm (lbf * in) Weight 6.0 (5.0) Mounting torque Marking device Case style TO-220AC Case style TO-220 FULL-PAK C/W g 8ETL06 8ETL06FP Revision: 15-Nov-16 Document Number: 94028 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8ETL06PbF, VS-8ETL06-N3, VS-8ETL06FPPbF, VS-8ETL06FP-N3 www.vishay.com Vishay Semiconductors 100 100 IR - Reverse Current (A) IF - Instantaneous Forward Current (A) TJ = 175 C 10 TJ = 175 C TJ = 150 C TJ = 25 C 1 0.1 0.4 0.8 1.2 1.6 TJ = 150 C 10 TJ = 125 C TJ = 100 C 1 TJ = 75 C 0.1 TJ = 50 C TJ = 25 C 0.01 0.001 2.0 100 200 400 300 500 600 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 100 TJ = 25 C 10 0 100 200 300 400 500 600 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 t1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 . 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 15-Nov-16 Document Number: 94028 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8ETL06PbF, VS-8ETL06-N3, VS-8ETL06FPPbF, VS-8ETL06FP-N3 ZthJC - Thermal Impedance (C/W) www.vishay.com Vishay Semiconductors 10 1 PDM D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 0.001 0.01 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.1 1 10 . 100 t1 - Rectangular Pulse Duration (s) 180 12 175 10 RMS limit Average Power Loss (W) Allowable Case Temperature (C) Fig. 5 - Maximum Thermal Impedance ZthJC Characteristics (FULL-PAK) 170 165 DC 160 Square wave (D = 0.50) Rated VR applied 155 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 6 4 2 DC See note (1) 150 0 0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 6 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 8 - Forward Power Loss Characteristics 450 180 VR = 390 V TJ = 125 C TJ = 25 C 400 160 350 DC 140 300 Square wave (D = 0.50) Rated VR applied trr (ns) Allowable Case Temperature (C) 8 120 250 200 150 100 100 50 See note (1) 80 0 2 4 6 8 10 12 14 0 100 IF = 16 A IF = 8 A 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/s) Fig. 7 - Maximum Allowable Case Temperature vs. Average Forward Current (FULL-PAK) Fig. 9 - Typical Reverse Recovery Time vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 8); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision: 15-Nov-16 Document Number: 94028 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8ETL06PbF, VS-8ETL06-N3, VS-8ETL06FPPbF, VS-8ETL06FP-N3 www.vishay.com Vishay Semiconductors 5000 IF = 16 A IF = 8 A 4500 4000 Qrr (nC) 3500 3000 2500 2000 1500 VR = 390 V TJ = 125 C TJ = 25 C 1000 500 100 1000 dIF/dt (A/s) Fig. 10 - Typical Stored Charge vs. dIF/dt (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 11 - Reverse Recovery Waveform and Definitions Revision: 15-Nov-16 Document Number: 94028 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8ETL06PbF, VS-8ETL06-N3, VS-8ETL06FPPbF, VS-8ETL06FP-N3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 8 E T L 06 FP PbF 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (8 = 8 A) 3 - E = single diode 4 - T = TO-220, D2PAK 5 - L = ultralow VF hyperfast recovery 6 - Voltage rating (06 = 600 V) 7 - None = TO-220AC FP = TO-220 FULL-PAK 8 - Environmental digit: PbF = lead (Pb)-free and RoHS-compliant -N3 = halogen-free, RoHS-compliant and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-8ETL06PbF 50 1000 Antistatic plastic tube VS-8ETL06-N3 50 1000 Antistatic plastic tube VS-8ETL06FPPbF 50 1000 Antistatic plastic tube VS-8ETL06FP-N3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information SPICE model TO-220AC www.vishay.com/doc?95221 TO-220FP www.vishay.com/doc?95005 TO-220ACPbF www.vishay.com/doc?95224 TO-220AC-N3 www.vishay.com/doc?95068 TO-220FPPbF www.vishay.com/doc?95009 TO-220FP-N3 www.vishay.com/doc?95440 TO-220AC www.vishay.com/doc?96053 TO-220FP www.vishay.com/doc?96054 Revision: 15-Nov-16 Document Number: 94028 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters 10.6 10.4 Hole O 3.4 3.1 2.8 2.6 3.7 3.2 7.31 6.91 16.0 15.8 16.4 15.4 10 3.3 3.1 13.56 13.05 2.54 TYP. 0.9 0.7 0.61 0.38 2.54 TYP. R 0.7 (2 places) R 0.5 4.8 4.6 5 0.5 Revision: 20-Jul-11 5 0.5 1.4 1.3 2.85 2.65 1.15 TYP. 1.05 Lead assignments Diodes 1 + 2 - Cathode 3 - Anode Conforms to JEDEC outline TO-220 FULL-PAK Document Number: 95005 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AC DIMENSIONS in millimeters and inches (6) B Seating plane A E A OP 0.014 M B A M E2 (7) Q 3 D D L1 E A1 C Thermal pad C H1 D2 Detail B (6) 2 x b2 2xb Detail B D1 1 2 A (6) H1 (7) (6) D 1 2 3 Lead tip L3 C E1 (6) Lead assignments Diodes 1 + 2 - Cathode 3 - Anode L4 L c e1 A Conforms to JEDEC outline TO-220AC View A - A A2 0.015 M B A M SYMBOL MILLIMETERS INCHES NOTES SYMBOL MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 E1 A1 1.14 1.40 0.045 0.055 A2 2.56 2.92 0.101 0.115 b 0.69 1.01 0.027 0.040 b1 0.38 0.97 0.015 0.038 b2 1.20 1.73 0.047 0.068 b3 1.14 1.73 0.045 0.068 MILLIMETERS INCHES MAX. MIN. MAX. 6.86 8.89 0.270 0.350 6 E2 - 0.76 - 0.030 7 e 2.41 2.67 0.095 0.105 e1 4.88 5.28 0.192 0.208 4 H1 6.09 6.48 0.240 0.255 L 13.52 14.02 0.532 0.552 4 L1 3.32 3.82 0.131 0.150 c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084 c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 D 14.85 15.25 0.585 0.600 3 OP 3.54 3.73 0.139 0.147 Q 2.60 3.00 0.102 0.118 D1 8.38 9.02 0.330 0.355 D2 11.68 12.88 0.460 0.507 6 E 10.11 10.51 0.398 0.414 3, 6 NOTES MIN. 90 to 93 6, 7 2 2 90 to 93 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline Document Number: 95221 Revision: 07-Mar-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: VS-8ETL06FPPBF VS-8ETL06PBF VS-8ETL06-N3