© 2007 IXYS All rights reserved 1 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
VHF 55 VHO 55
VKO 55 VKF 55
20070731a
Features
• Package with copper base plate
• Isolation voltage 3000 V~
• Planar passivated chips
• Low forward voltage drop
• 1/4" fast-on power terminals
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling capability
• Small and light weight
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747 refer to a single diode/thyristor unless otherwise stated
① for resistive load at bridge output.
VRSM VRRM Type
VDSM VDRM
VV
800 800 xxx 55-08io7
1200 1200 xxx 55-12io7
1400 1400 xxx 55-14io7
1600 1600 xxx 55-16io7
xxx = type
IdAV = 53 A
VRRM = 800-1600 V
Symbol Test Conditions Maximum Ratings
IdAV ①TK = 85°C, module 53 A
IdAVM ①module 53 A
IFRMS, ITRMS per leg 41 A
IFSM, ITSM TVJ = 45°C; t = 10 ms (50 Hz), sine 550 A
VR = 0 V t = 8.3 ms (60 Hz), sine 600 A
TVJ = TVJM t = 10 ms (50 Hz), sine 500 A
VR = 0 V t = 8.3 ms (60 Hz), sine 550 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 1520 A2s
VR = 0 V t = 8.3 ms (60 Hz), sine 1520 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 1250 A2s
VR = 0 V t = 8.3 ms (60 Hz), sine 1250 A2s
(di/dt)cr TVJ = 125°C repetitive, IT = 50 A 150 A/μs
f = 50 Hz, tP = 200 μs
VD = 2/3 VDRM
IG = 0.3 A, non repetitive, IT = 1/2 • IdAV 500 A/μs
diG/dt = 0.3 A/μs
(dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM 1000 V/μs
RGK = ∞; method 1 (linear voltage rise)
VRGM 10 V
PGM TVJ = TVJM tp = 30 μs≤10 W
IT = ITAVM tp = 500 μs≤5W
tp = 10 ms ≤1W
PGAVM 0.5 W
TVJ -40...+125 °C
TVJM 125 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
IISOL ≤ 1 mA t = 1 s 3000 V~
MdMounting torque (M5) 5 ± 15 % Nm
(10-32 UNF) 44 ± 15 % lb.in.
Weight 110 g
Preliminary data
Single Phase
Rectifier Bridge
VHF 55
VHO 55
VKF 55 VKO 55
p h a s e - o u t
© 2007 IXYS All rights reserved 2 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
VHF 55 VHO 55
VKO 55 VKF 55
20070731a
Symbol Test Conditions Characteristic Values
ID, IRTVJ = TVJM; VR = VRRM; VD = VDRM ≤5mA
VTIT= 80 A; TVJ = 25°C ≤1.64 V
VT0 For power-loss calculations only 0.85 V
rT11 mΩ
VGT VD = 6 V; TVJ = 25°C ≤1.5 V
TVJ = -40°C ≤1.6 V
IGT VD = 6 V; TVJ = 25°C ≤100 mA
TVJ = -40°C ≤200 mA
VGD TVJ = TVJM;V
D = 2/3 VDRM ≤0.2 V
IGD ≤5mA
ILTVJ = 25°C; tP = 10 μs≤450 mA
IG = 0.45 A; diG/dt = 0.45 A/μs
IHTVJ = 25°C; VD = 6 V; RGK = ∞≤200 mA
tgd TVJ = 25°C; VD = 1/2 VDRM ≤2μs
IG = 0.45 A; diG/dt = 0.45 A/μs
tqTVJ = TVJM; IT = 20 A, tP = 200 μs; di/dt = -10 A/μs typ. 250 μs
VR = 100 V; dv/dt = 15 V/μs; VD = 2/3 VDRM
RthJC per thyristor / Diode; DC 0.9 K/W
per module 0.18 K/W
RthJK per thyristor / Diode; DC 1.1 K/W
per module 0.22 K/W
dSCreeping distance on surface 16.1 mm
dACreepage distance in air 7.1 mm
aMax. allowable acceleration 50 m/s2
p h a s e - o u t
