GBU8A
THRU
GBU8M
GBU
Features
Maximum Ratings
MCC
Part Number Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
MCC
www.mccsemi.com
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .860 .880 21.80 22.30
B .720 .740 18.30 18.80
C .130 .140 3.30 3.56
D .690 .710 17.50 18.00
E .030 .039 0.76 1.00
G .290 .310 7.40 7.90
I .065 .085 1.65 2.16
J .089 .108 2.25 2.75
K .077 .093 1.95 2.35
L .040 .050 1.02 1.27
M .190 .210 4.83 5.33
H .140 .160 3.50 4.10
F .018 .022 0.46 0.56
8 Amp Single Phase
Glass Passivated
Bridge Rectifier
50 to 1000 Volts
• Plastic Package has Underwriters Laboratory
• Glass Passivated Chip Junction
• High Temperature Soldering Guaranteed
• High Surge Overload Rating
• Operating Temperature: -55°C to +150°C
• Storage Temperature: -55 °C to +150°C
GBU8A GBU8A 50V 35V 50V
GBU8B GBU8B 100V 70V 100V
GBU8D GBU8D 200V 140V 200V
GBU8G GBU8G 400V 280V 400V
GBU8K GBU8K 800V 560V 800V
GBU8M GBU8M 1000V 700V 1000V
GBU8J GBU8J 600V 420V 600V
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current IF(AV) 8 A Tc = 100°C
Peak Forward Surge
Current IFSM 200A 8.3ms, half sine
Maximum
Instantaneous
Forward Voltage VF 1.0V TJ = 25°C
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR
5 µA
500uATJ = 25°C
TJ = 125°C
Typical Junction
Capacitance CJ 60pF Measured at
1.0MHz, VR=4.0V
*Pulse Test: Pulse Width 300µsec, Duty Cycle 1%
C
E
F
B
I
NN
NN
+
++
+
-
--
-~
~~
~
~
~~
~
A
D
GH
M
L
K
J
3.2x45
1.90 RADIUS
N 7.0 TYPICAL
IFM=4A
• Typical Thermal Resistance 2.2°C/W Junction to Case
I t Rating for fusing
2
I t 2
166A S2(t<8.3ms)
omponents
20736 Marilla Street Chatsworth
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Revision: 3 2002/03/24
MCC
www.mccsemi.com
GBU8A thru GBU8M
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS F OR WARD CU RRENT ,(A)
0.2 0.4 1.2 1.4
0
1.0
10
100
0.6 0.8 1.0
0.1 1.8
1.6
TJ= 25 C
PUL SE WIDTH 300us
FIG.2 - MAXIMUM NON- REPETITIVE SURGE CURRENT
NUMBER OF CYCL ES AT 60Hz
PEAK FORW ARD SURGE CURRENT,
AMPERES
1 5 10 50 100220
0
50
100
200
150
Single Half-Sine-Wave
(JEDEC ME THOD)
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
40 60 100 120
6.0
0 20
2.0
10.0
80
CASE TEMPERATURE , C
8.0
4.0
140
0
WITHOUT HEATSINK
WITH HEATSINK
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
FIG.3 - TY PICAL JUNCTION CAPACITANCE
CAPACITANCE , (pF)
REVERSE VOLTAGE , VOLTS
10 100
1000
10
11.0
100
4
TJ= 25 C, f = 1MHz
FIG.5 - TYPICAL REVERSE CHARACT ERISTICS
INSTANTANEOUS
REVERSE CURRENT ,(uA)
20 40
0
1.0
10
100
60 80 100
0.1
1000
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
TJ= 25 C
TJ= 125 C
TJ= 100 C
TJ= 50 C
Revision: 3 2002/03/24
